Intersil Corporation BUZ71A Datasheet
BUZ71A
Data Sheet June 1999 File Number 2419.2
13A, 50V, 0.120 Ohm, N-Channel Power
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA9770.
Ordering Information
PART NUMBER PACKAGE BRAND
BUZ71A TO-220AB BUZ71A
NOTE: When ordering, use the entire part number.
Features
• 13A, 50V
•r
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 0.120Ω
DS(ON)
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
4-17
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
BUZ71A
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
BUZ71A UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Continuous Drain Current, TC = 55oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
DS
DGR
D
DM
GS
D
AS
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
50 V
50 V
13 A
48 A
±20 V
40 W
100 mJ
-55 to 150
o
C
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55/150/56
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
300
260
o
C
o
C
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V
Zero Gate Voltage Drain Current I
DSSID
GS(TH)VGS
DSS
= 250µA, VGS = 0V 50 - - V
= VDS, ID = 1mA (Figure 9) 2.1 3 4 V
TJ = 25oC, VDS = 50V, VGS = 0V - 20 250 µA
TJ = 125oC, VDS = 50V, VGS = 0V - 100 1000 µA
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
DS(ON)ID
Forward Transconductance (Note 2) g
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
GSS
OSS
RSS
VGS = 20V, VDS = 0V - 10 100 nA
= 9A, VGS = 10V (Figure 8) - 0.11 0.12 Ω
VDS = 25V, ID = 9A (Figure 11) 3.0 5.2 - S
fs
r
VCC = 30V, I
RL=10Ω
≈ 3A, V
D
= 10V, RGS = 50Ω,
GS
-2030 ns
-5585 ns
-7090 ns
f
VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) - 480 650 pF
ISS
- 80 110 ns
- 280 450 pF
- 160 280 pF
θJC
θJA
≤ 3.1
≤ 75
o
o
C/W
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current I
Pulsed Source to Drain Current I
SD
SDM
Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
NOTES:
2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 10V, TJ = 25oC, L = 820µH, I
= 14A. (See Figures 14 and 15).
PEAK
4-18
TC = 25oC--13A
TC = 25oC--52A
TJ = 25oC, ISD = 26A, VGS = 0V, (Figure 12) - 1.6 2.2 V
SD
TJ = 25oC, ISD = 13, dISD/dt = 100A/µs,
rr
VR= 30V
RR
- 120 - ns
- 0.15 - µC
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