Intersil Corporation BUZ71 Datasheet
BUZ71
Data Sheet June 1999 File Number 2418.2
14A, 50V, 0.100 Ohm, N-Channel Power
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA9770.
Ordering Information
PART NUMBER PACKAGE BRAND
BUZ71 TO-220AB BUZ71
NOTE: When ordering, use the entire part number.
Features
• 14A, 50V
•r
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 0.100Ω
DS(ON)
Components to PC Boards”
Symbol
D
G
S
Packaging
DRAIN (FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
11
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
BUZ71
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
BUZ71 UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current, TC = 55oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
DS
D
DM
GS
D
50 V
50 V
14 A
56 A
±20 V
40 W
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32 W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
AS
STG
100 mJ
-55 to 150
o
C
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55/150/56
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
300
260
o
C
o
C
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V
Zero Gate Voltage Drain Current I
DSSID
GS(TH)VGS
DSS
= 250µA, VGS = 0V 50 - - V
= VDS, ID = 1mA (Figure 9) 2.1 3 4 V
TJ = 25oC, VDS = 50V, VGS = 0V - 20 250 µA
TJ = 125oC, VDS = 50V, VGS = 0V - 100 1000 µA
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
DS(ON)ID
Forward Transconductance (Note 2) g
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
GSS
OSS
RSS
VGS = 20V, VDS = 0V - 10 100 nA
= 9A, VGS = 10V (Figure 8) - 0.09 0.1 Ω
VDS = 25V, ID = 9A (Figure 11) 3.0 5.2 - S
fs
r
VCC = 30V, I
RL = 10Ω
≈ 3A, V
D
= 10V, RGS = 50Ω,
GS
-2030 ns
-5585 ns
-7090 ns
f
VDS = 25V, VGS = 0V, f = 1MHz
ISS
(Figure 10)
- 80 110 ns
- 480 650 pF
- 280 450 pF
- 160 280 pF
θJC
θJA
≤ 3.1
≤ 75
o
o
C/W
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current I
Pulsed Source to Drain Current I
SD
SDM
Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
NOTES:
2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 10V, starting TJ = 25oC, L = 820µH, I
PEAK
12
TC = 25oC--14A
TC = 25oC--56A
TJ = 25oC, ISD = 28A, VGS = 0V, (Figure 12) - 1.6 1.8 V
SD
TJ = 25oC, ISD = 14A, dISD/dt = 100A/µs,
rr
VR = 30V
RR
- 120 - ns
- 0.15 - µC
= 14A. (See Figures 14 and 15).
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