Intersil Corporation BUZ45A Datasheet

Semiconductor

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BUZ45A

Data Sheet October 1998 File Number 2258.1

[ /Title
(BUZ45
A)

Subject
(8.3A,
500V,

0.800
Ohm, N­Channel
Power
MOS­FET)

Author
()

Key­words
(Harris
Semi­conduc­tor, N­Channel
Power
MOS­FET,
TO­204AA)

Creator
()

DOCIN
FO pdf­mark

8.3A, 500V, 0.800 Ohm, N-Channel Power
MOSFET

This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.

Formerly developmental type TA17425.

Ordering Information

PART NUMBER PACKAGE BRAND

BUZ45A TO-204AA BUZ45A

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-204AA

DRAIN
(FLANGE)

GATE (PIN 1)

Features

• 8.3A, 500V

DS(ON)

= 0.800Ω

•r

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

Symbol

D

G

S

SOURCE (PIN 2)

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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-800-4-HARRIS

| Copyright © Harris Corporation 1998