Intersil Corporation BUZ45 Datasheet

Semiconductor

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BUZ45

Data Sheet October 1998 File Number 2257.1

[ /Title
(BUZ45)

Subject
(9.6A,
500V,

0.600
Ohm, N­Channel
Power
MOS­FET)

Author
()

Key­words
(Harris
Semi­conduc­tor, N­Channel
Power
MOS­FET.
TO­204AA)

Creator
()

DOCIN
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9.6A, 500V, 0.600 Ohm, N-Channel Power
MOSFET

IThis is an N-Channel enhancement mode silicon gate
power field effect transistor designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.

Formerly developmental type TA17435.

Ordering Information

PART NUMBER PACKAGE BRAND

BUZ45 TO-204AA BUZ45

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-204AA

DRAIN
(FLANGE)

GATE (PIN 1)

Features

• 9.6A, 500V

DS(ON)

= 0.600Ω

•r

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

Symbol

G

SOURCE (PIN 2)

D

S

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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-800-4-HARRIS

| Copyright © Harris Corporation 1998