Intersil Corporation BUZ351 Datasheet

Semiconductor

/
j

/

/

/

/

/

BUZ351

Data Sheet October 1998 File Number 2266.1

[ /Title
(BUZ35

1)
Sub­ect

(11.5A,
400V,

0.400

Ohm,
N-Chan­nel
Power
MOS­FET)

Author

()

Key-

words
(Harris
Semi­conduc­tor, N­Chan­nel
Power
MOS­FET,
TO­220AB)

Cre-

ator ()

DOCIN

FO pdf­mark

11.5A, 400V, 0.400 Ohm, N-Channel Power
MOSFET

This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.

Formerly developmental type TA17434.

Ordering Information

PART NUMBER PACKAGE BRAND

BUZ351 TO-218AC BUZ351

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-218AC

DRAIN (FLANGE)

Features

• 11.5A, 400V

•r

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.400Ω

DS(ON)

Components to PC Boards”

Symbol

D

G

S

SOURCE

DRAIN

GATE

[ /Page­Mode

Use-

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-800-4-HARRIS

| Copyright © Harris Corporation 1998