Intersil Corporation BUZ32 Datasheet

Semiconductor

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BUZ32

[ /Title
(BUZ32)

Subject
(9.5A,
200V,

0.400
Ohm, N­Channel
Power
MOS­FET)

Author
()

Key­words
(Harris
Semi­conduc­tor, N­Channel
Power
MOS­FET,
TO­220AB)

Creator
()

DOCIN
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Data Sheet

9.5A, 200V, 0.400 Ohm, N-Channel Power
MOSFET

This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.

Formerly developmental type TA17412.

Ordering Information

PART NUMBER PACKAGE BRAND

BUZ32 TO-220AB BUZ32

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-220AB

DRAIN (FLANGE)

October 1998 File Number 2416.1

Features

• 9.5A, 200V

•r

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.400Ω

DS(ON)

Components to PC Boards”

Symbol

D

G

S

SOURCE

DRAIN

GATE

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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-800-4-HARRIS

| Copyright © Harris Corporation 1998

BUZ32

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

BUZ32 UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Continuous Drain Current, TC = 55oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

DS

DGR

D

DM

GS

D

AS

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

200 V
200 V

9.5 A
38 A

±20 V

75 W

150 mJ

-55 to 150

o

C

DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55/150/56

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V
Zero Gate Voltage Drain Current I

DSSID

GS(TH)VGS

DSS

= 250µA, VGS = 0V 200 - - V

= VDS, ID = 1mA (Figure 9) 2.1 3 4 V
TJ = 25oC, VDS = 200V, VGS = 0V - 20 250 µA
TJ = 125oC, VDS = 200V, VGS = 0V - 100 1000 µA

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

GSS

OSS
RSS

VGS = 20V, VDS = 0V - 10 100 nA

= 4.5A, VGS = 10V (Figure 8) - 0.35 0.4 Ω

VDS = 25V, ID = 4.5A (Figure 11) 2.2 5.0 - S

fs

VCC = 30V, I
RL = 10Ω. (Figures 16, 17)

r

≈ 2.9A, V

D

= 10V, RGS = 50Ω,

GS

-3045 ns

-4060 ns

- 110 140 ns

f

VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) - 1500 2000 pF

ISS

-6080 ns

- 250 400 pF

- 70 120 pF

θJC
θJA

≤ 1.67

≤ 75

o
o

C/W
C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulsed Source to Drain Current I
Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q

SD

SDM

SD

RR

TC = 25oC - - 9.5 A
TC = 25oC--38A
TJ = 25oC, ISD = 19A, VGS = 0V - 1.3 1.7 V
TJ = 25oC, ISD = 9.5A, dISD/dt = 100A/µs,

rr

VR = 100V

- 400 - ns

- 6.0 - µC

NOTES:

2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 20V, starting TJ = 25oC, L = 3.3µH, RG = 50Ω, I

= 9A. (See Figures 14 and 15).

PEAK

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