intersil BTS436L2 User Manual
BTS436L2
Smart High-Side Power Switch
One Channel: 38mΩ
Status Feedback
Product Summary Package
On-state Resistance R
Operating Voltage V
Nominal load current I
Current limitation I
38mΩ
ON
4.75...41V
bb(on)
9.8A
L(NOM)
40A
L(SCr)
General Description
• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOS
• Providing embedded protective functions
TO 220-5-11 TO-263-5-2 TO-220-5-12
Standard SMD Straight
technology.
Applications
• µC compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads
• All types of resistive, inductive and capacitve loads
• Most suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
• Very low standby current
• CMOS compatible input
• Fast demagnetization of inductive loads
• Stable behaviour at undervoltage
• Wide operating voltage range
• Logic ground independent from load ground
Block Diagram
Protection Functions
• Short circuit protection
• Overload protection
• Current limitation
• Thermal shutdown
• Overvoltage protection (including load dump) with external
resistor
• Reverse battery protection with external resistor
• Loss of ground and loss of V
protection
bb
• Electrostatic discharge protection (ESD)
IN
ST
Vbb
Logic
with
protection
functions
OUT
Diagnostic Function
• Diagnostic feedback with open drain output
• Open load detection in ON-state
PROFET
GND
Load
• Feedback of thermal shutdown in ON-state
Semiconductor Group Page 1 of 12 2003-Oct-01
BTS436L2
p
g
Functional diagram
IN
ST
GND
overvoltage
rotection
internal
e supply
volta
ESD
logic
gate
control
+
charge
pump
temperature
sensor
Open load
detection
current limit
clamp for
inductive load
VBB
OUT
LOAD
PROFET
Pin Definitions and Functions
Pin
Symbol Function
1
2 IN
3 Vbb
4 ST
GND
Input, activates the power switch in
Positive power supply voltage
The tab is shorted to pin 3
Diagnostic feedback, low on failure
5 OUT
Tab Vbb
Positive power supply voltage
The tab is shorted to pin 3
Logic ground
case of logical high signal
Output to the load
Pin configuration
(top view)
Tab = V
BB
1 2 (3) 4 5
GND IN ST OUT
Semiconductor Group Page 2 2003-Oct-01
BTS436L2
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 4) Vbb 43 V
Supply voltage for full short circuit protection
T
=-40 ...+150°C
j Start
Load dump protection
2
)
R
= 2 Ω, RL= 4.0 Ω, t
I
1
)
V
LoadDump
= 200 ms, IN= low or high
d
= VA + Vs, VA = 13.5 V
Load current (Current limit, see page 5) IL self-limited A
Operating temperature range
Storage temperature range
Power dissipation (DC), T
≤ 25 °C P
C
Maximal switchable inductance, single pulse
V
= 12V, T
bb
(See diagram on page 8) I
= 150°C, TC = 150°C const.
j,start
L(ISO)
= 9.8 A, R
= 0 Ω, E
L
4
)
AS
=0.33J:
Electrostatic discharge capability (ESD) IN:
(Human Body Model) ST:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and
ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF
Input voltage (DC) VIN -10 ... +16 V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 7
Vbb 24 V
V
Load dump
Tj
T
stg
75 W
tot
3
60 V
-40 ...+150
-55 ...+150
°C
ZL 5.0 mH
V
1.0
ESD
kV
4.0
8.0
IIN
IST
±2.0
±5.0
mA
Thermal Characteristics
Parameter and Conditions Symbol Values Unit
min typ max
75
K/W
--
bb
Thermal resistance chip - case:
junction - ambient (free air):
device on pcb
1
)
Supply voltages higher than V
resistor for the GND connection is recommended).
2
)
RI = internal resistance of the load dump test pulse generator
3
)
V
Load dump
4
)
EAS is the maximum inductive switch-off energy
5
)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
connection. PCB is vertical without blown air.
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
require an external current limit for the GND and status pins (a 150Ω
bb(AZ)
5
)
R
thJC
R
thJA
:
2
(one layer, 70µm thick) copper area for V
--
--
--
--
--
33
1.75
Semiconductor Group Page 3 2003-Oct-01
BTS436L2
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj =-40...+150°C, V
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 2 A; V
≥ 7V T
BB
Tj=150 °C:
see diagram, page 9
Nominal load current, (pin 3 to 5)
ISO 10483-1, 6.7:VON=0.5V, TC=85°C
Output current (pin 5) while GND disconnected or
GND pulled up
see diagram page 7
Turn-on time IN to 90% V
Turn-off time IN to 10% V
R
= 12 Ω,
L
Slew rate on
10 to 30% V
OUT
Slew rate off
70 to 40% V
OUT
= 12 V unless otherwise specified
bb
6
)
, Vbb=30 V, VIN= 0,
, R
= 12 Ω,
L
, R
= 12 Ω,
L
=25 °C:
j
OUT
OUT
RON
min typ max
--
35
64
I
L(ISO)
I
L(GNDhigh)
:
ton
:
t
off
dV /dt
-dV/dt
-- -- 2 mA
0.1 -- 1 V/µs
on
0.1 -- 1 V/µs
off
8.8
50
50
9.8 -- A
100
120
38
72
200
250
mΩ
µs
Operating Parameters
Operating voltage Tj =-40
Tj =+25...+150°C:
7
Overvoltage protection
)
Tj =-40°C:
Ibb=40 mA Tj =25...+150°C:
Standby current (pin 3)
VIN=0; see diagram on page 9 T
Off-State output current (included in I
VIN=0
Operating current
8)
T
9
)
, VIN=5 V
=-40...+25°C:
j
= 150°C:
j
)
bb(off)
6
)
not subject to production test, specified by design
7
)
Supply voltages higher than V
resistor for the GND connection is recommended. See also V
circuit diagram page 7.
8
)
Measured with load
9
)
Add I
, if IST > 0, add IIN, if VIN>5.5 V
ST
require an external current limit for the GND and status pins (a 150Ω
bb(AZ)
V
4.75 --
bb(on)
--
V
I
I
I
41
bb(AZ)
43
--
bb(off)
--
-- 1 10 µA
L(off)
-- 0.8 1.4 mA
GND
in table of protection functions and
ON(CL)
--
47
5
--
41
43
52
25
V
--
8
V
µA
Semiconductor Group Page 4 2003-Oct-01
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