intersil BCW60, BCX70 User Manual
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NPN Silicon AF Transistors
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BCW61, BCX71 (PNP)
BCW60, BCX70
3
1
2
VPS05161
Type Marking Pin Configuration Package
BCW60A
BCW60B
BCW60C
BCW60D
BCW60FF
BCW60FN
BCX70G
BCX70H
BCX70J
BCX70K
AAs
ABs
ACs
ADs
AFs
ANs
AGs
AHs
AJs
AKs
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
1 Jan-29-2002
Maximum Ratings
g
BCW60, BCX70
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Peak base current
Total power dissipation, TS = 71 °C P
Junction temperature
Storage temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
BM
tot
T
j
T
st
BCW60 BCW60FF BCX70
32 32 45 V
32 32 45
5 5 5
100 mA
200
200
330 mW
150 °C
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
240 K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol Values Unit
min. typ. max.
Unit
DC Characteristics
Collector-emitter breakdown voltage
I
= 10 mA, IB = 0
C
Collector-base breakdown voltage
I
= 10 µA, IB = 0
C
BCW60/60FF
BCX70
BCW60/60FF
BCX70
Emitter-base breakdown voltage
I
= 1 µA, IC = 0
E
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
32
45
32
45
-
-
-
-
5 - -
V
-
-
-
-
2 Jan-29-2002
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BCW60, BCX70
Parameter
AC Characteristics
Collector cutoff current
V
= 32 V, IE = 0
CB
= 45 V, IE = 0
V
CB
Collector cutoff current
= 32 V, IE = 0 , TA = 150 °C
V
CB
V
= 45 V, IE = 0 , TA = 150 °C
CB
Emitter cutoff current
= 4 V, IC = 0
V
EB
DC current gain 1)
= 10 µA, VCE = 5 V
I
C
BCW60 /60FF
BCX70
BCW60 / 60FF
BCX70
hFE-grp. A/ G
h
-grp. B/ H
FE
h
-grp. C/ J/ FF
FE
h
-grp. D/ K/ FN
FE
Symbol Values Unit
min. typ. max.
I
CBO
I
CBO
I
EBO
h
FE
-
-
-
-
- - 20 nA
20
20
40
100
-
-
-
-
140
200
300
460
20
20
20
20
-
-
-
-
nA
µA
-
DC current gain 1)
= 2 mA, VCE = 5 V
I
C
DC current gain 1)
= 50 mA, VCE = 1 V
I
C
hFE-grp. A/ G
h
-grp. B/ H
FE
h
-grp. C/ J/ FF
FE
h
-grp. D/ K/ FN
FE
hFE-grp. A/ G
h
-grp. B/ H
FE
h
-grp. C/ J/ FF
FE
h
-grp. D/ K/ FN
FE
h
FE
120
180
250
380
h
FE
50
70
90
100
170
250
350
500
-
-
-
-
220
310
460
630
-
-
-
-
1) Pulse test: t ≤=300µs, D = 2%
3 Jan-29-2002
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