intersil BAR14-1, BAR15-1, BAR16-1 User Manual
查询BAR14-1供应商
BAR14-1 / BAR15-1 / BAR16-1 / BAR61...
Silicon PIN Diode
RF switch, RF attenuator for frequencies
above 10 MHz
Low distortion faktor
Long-term stability of electrical characteristics
BAR14-1 BAR15-1 BAR61BAR16-1
3
D1
D2
1
2
3
D2
D1
1
2
3
D2
D1
1
2
Type Package Configuration L
BAR14-1
BAR15-1
BAR16-1
BAR61
SOT23
SOT23
SOT23
SOT143
series
common cathode
common anode
PI element
4 3
D1
D2
D3
21
(nH) Marking
S
1.8
1.8
1.8
2
L7s
L8s
L9s
61s
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage V
Forward current I
Total power dissipation
65°C
T
S
P
Junction temperature T
Operating temperature range T
R
F
tot
j
op
100 V
140 mA
250 mW
150 °C
-55 ... 125
Storage temperature T
Thermal Resistance
Parameter
Junction - soldering point
1
For calculation of R
thJA
1)
please refer to Application Note Thermal Resistance
1
stg
-55 ... 150
Symbol Value Unit
R
thJS
340
K/W
Dec-20-2002
BAR14-1 / BAR15-1 / BAR16-1 / BAR61...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Reverse current
V
= 50 V
R
V
= 100 V
R
Forward voltage
I
= 100 mA
F
AC Characteristics
Diode capacitance
V
= 0 V, f = 100 MHz
R
V
= 50 V, f = 1 MHz
R
Zero bias conductance
V
= 0 V, f = 100 MHz
R
Forward resistance
I
= 0.01 mA, f = 100 MHz
F
I
= 0.1 mA, f = 100 MHz
F
I
= 1 mA, f = 100 MHz
F
I
= 10 mA, f = 100 MHz
F
C
g
r
I
V
R
-
-
F
T
- 1.05 1.25 V
-
-
P
f
- 50 -
-
-
-
-
-
-
0.2
0.25
2800
380
45
7
100
1000
-
0.5
-
-
-
-
nA
pF
S
Charge carrier life time
I
= 10 mA, IR = 6 mA, measured at IR = 3 mA,
F
R
= 100
L
I-region width W
2
rr
I
700 1000 - ns
- 146 - µm
Dec-20-2002
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