Intersil Corporation ACTS86MS Datasheet
April 1995
ACTS86MS
Radiation Hardened
Quad 2-Input Exclusive OR Gate
Features
• 1.25 Micron Radiation Hardened SOS CMOS
• Total Dose 300K RAD (Si)
• Single Event Upset (SEU) Immunity
<1 x 10
• SEU LET Threshold >80 MEV-cm
• Dose Rate Upset >10
-10
Errors/Bit-Day (Typ)
11
RAD (Si)/s, 20ns Pulse
2
/mg
• Latch-Up Free Under Any Conditions
o
• Military Temperature Range: -55
C to +125oC
• Significant Power Reduction Compared to ALSTTL Logic
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
- VIL = 0.8V Max
- VIH = VCC/2V Min
• Input Current ≤1µA at VOL, VOH
Description
The Intersil ACTS86MS is a radiation hardened quad 2-input
exclusive OR gate. A high logic level on any one input exclusively will change the output to a high logic state.
The ACTS86MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of the
radiation hardened, high-speed, CMOS/SOS Logic Family.
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE
MIL-STD-1835 DESIGNATOR, CDIP2-T14, LEAD FINISH C
TOP VIEW
A1
1
2
B1
3
Y1
4
A2
5
B2
6
Y2
7
GND
14 LEAD CERAMIC FLATPACK
MIL-STD-1835 DESIGNATOR, CDFP3-F14, LEAD FINISH C
TOP VIEW
A1
B1
Y1
A2
B2
Y2
GND
1
2
3
4
5
6
7
14
VCC
13
B4
12
A4
11
Y4
10
B3
9
A3
8
Y3
14
13
12
11
10
9
8
VCC
B4
A4
Y4
B3
A3
Y3
Ordering Information
PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE
ACTS86DMSR -55oC to +125oC Intersil Class S Equivalent 14 Lead SBDIP
ACTS86KMSR -55oC to +125oC Intersil Class S Equivalent 14 Lead Ceramic Flatpack
ACTS86D/Sample +25oC Sample 14 Lead SBDIP
ACTS86K/Sample +25oC Sample 14 Lead Ceramic Flatpack
ACTS86HMSR +25oC Die Die
Truth Table
INPUTS OUTPUT
An Bn Yn
LLL
LHH
HLH
HHL
NOTE: L = Logic Level Low, H = Logic Level High
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Functional Diagram
(1, 4, 9, 12)
An
Bn
(2, 5, 10, 13)
1
(3, 6, 8, 11)
Spec Number 518847
File Number 3996
Yn
Specifications ACTS86MS
Absolute Maximum Ratings Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +6.0V
Input Voltage Range. . . . . . . . . . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±50mA
Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
(All Voltages Reference to VSS)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Supply Voltage Range . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Time at 4.5V VCC (TR, TF). . . . . . .10ns/V Max
Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Thermal Impedance θ
DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W
Flat Pack . . . . . . . . . . . . . . . . . . . . . . . . . 116oC/W 30oC/W
Maximum Package Power Dissipation at +125oC
DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7W
Flatpack. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4W
Maximum Device Power Dissipation. . . . . . . . . . . . . . . . . . .(TBD)W
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .52 Gates
Input High Voltage (VIH). . . . . . . . . . . . . . . . . . . . . . .VCC to VCC/2
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . . .0V to 0.8V
JA
θ
JC
(NOTE 1)
PARAMETER SYMBOL
Supply Current ICC VCC = 5.5V,
Delta ICC DICC VCC = 5.5V,
Output Current
(Source)
Output Current
(Sink)
Output Voltage High VOH VCC = 5.5V, VIH = 2.75V,
Output Voltage Low VOL VCC = 5.5V, VIH = 2.75V,
IOH VCC = VIH = 4.5V,
IOL VCC = VIH = 4.5V,
CONDITIONS
VIN = VCC or GND
VIN = VCC or GND,
1 Input = 3.4V
VOUT = VCC -0.4V,
VIL = 0V, (Note 2)
VOUT = 0.4V, VIL = 0V,
(Note 2)
VIL = 0.8V, IOH = -50µA
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, IOH = -50µA
VIL = 0.8V, IOH = 50µA
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, IOH = 50µA
GROUP
A SUB-
GROUPS TEMPERATURE
1 +25oC-5µA
2, 3 +125oC, -55oC - 100 µA
1, 2, 3 +25oC, +125oC, -55oC - 1.6 mA
1 +25oC -12 - mA
2, 3 +125oC, -55oC-8-mA
1 +25oC12-mA
2, 3 +125oC, -55oC8-mA
1, 2, 3 +25oC, +125oC, -55oC VCC
1, 2, 3 +25oC, +125oC, -55oC VCC
1, 2, 3 +25oC, +125oC, -55oC - 0.1 V
1, 2, 3 +25oC, +125oC, -55oC - 0.1 V
LIMITS
UNITSMIN MAX
-V
-0.1
-V
-0.1
Input Leakage
Current
Noise Immunity
Functional Test
NOTES:
1. All voltages referenced to device GND.
2. Force/measure functions may be interchanged.
3. For functional tests, VO ≥4.0V is recognized as a logic “1”, and VO ≤0.5V is recognized as a logic “0”.
IIN VCC = 5.5V,
VIN = VCC or GND
FN VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, (Note 3)
1 +25oC-±0.5 µA
2, 3 +125oC, -55oC-±1.0 µA
7, 8A, 8B +25oC, +125oC, -55oC- - V
2
Spec Number 518847
Specifications ACTS86MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
(NOTES 1, 2)
PARAMETER SYMBOL
Propagation Delay
Input to Output
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns.
PARAMETER SYMBOL CONDITIONS NOTE TEMP
Capacitance Power
Dissipation
Input Capacitance CIN VCC = 5.0V, VIH = 5.0V,
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TPHL VCC = 4.5V, VIH = 3.0V,
TPLH VCC = 4.5V, VIH = 3.0V,
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
CPD VCC = 5.0V, VIH = 5.0V,
CONDITIONS
VIL = 0V
VIL = 0V
VIL = 0V, f = 1MHz
VIL = 0V, f = 1MHz
A SUB-
GROUPS TEMPERATURE
9 +25oC 2 18 ns
10, 11 +125oC, -55oC 2 20 ns
9 +25oC 2 15 ns
10, 11 +125oC, -55oC 2 17 ns
1 +25oC - 25 - pF
1 +125oC - 25 - pF
1 +25oC- -10pF
1 +125oC- - 10pF
LIMITS
UNITSMIN MAX
LIMITS
UNITSMIN TYP MAX
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
(NOTE 1)
PARAMETER SYMBOL
Supply Current ICC VCC = 5.5V, VIN = VCC or GND +25oC - 100 µA
Delta ICC DICC VCC = 5.5V, VIN = VCC or GND,
1 Input = 3.4V
Output Current
(Source)
Output Current (Sink) IOL VCC = VIH = 4.5V,
Output Voltage High VOH VCC = 5.5V, VIH = 2.75V,
Output Voltage Low VOL VCC = 5.5V, VIH = 2.75V,
Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND +25oC-±1 µA
Noise Immunity
Functional Test
Propagation Delay
Input to Output
NOTES:
1. All voltages referenced to device GND.
2. For functional tests, VO ≥4.0V is recognized as a logic “1”, and VO ≤0.5V is recognized as a logic “0”.
IOH VCC = VIH = 4.5V,
VOUT = VCC -0.4V, VIL = 0
VOUT = 0.4V, VIL = 0
VIL = 0.8V, IOH = -50µA
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, IOH = 50µA
VIL = 0.8V, IOH = 50µA
VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V, IOH = 50µA
FN VCC = 4.5V, VIH = 2.25V,
VIL = 0.8V , (Note 2)
TPHL VCC = 4.5V, VIH = 3.0V, VIL = 0V +25oC 2 20 ns
TPLH VCC = 4.5V, VIH = 3.0V, VIL = 0V +25oC 2 17 ns
CONDITIONS TEMPERATURE
+25oC - 1.6 mA
+25oC -8.0 - mA
+25oC 8.0 - mA
+25oC VCC -0.1 - V
+25oC VCC -0.1 - V
+25oC - 0.1 V
+25oC - 0.1 V
+25oC--V
RAD LIMITS
UNITSMIN MAX
TABLE 5. DELTA PARAMETERS (+25oC)
(NOTE 1)
PARAMETER SYMBOL
Supply Current ICC ±1.0 µA
Output Current IOL/IOH ±15 %
NOTE:
1. All delta calculations are referenced to 0 hour readings or pre-life readings.
DELTA LIMIT UNITS
3
Spec Number 518847
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