Intersil Corporation ACTS374MS Datasheet

April 1995

ACTS374MS

Radiation Hardened

Octal D Flip-Flop, Three-State

Features

• 1.25 Micron Radiation Hardened SOS CMOS

• Total Dose 300K RAD (Si)

• Single Event Upset (SEU) Immunity
<1 x 10

• SEU LET Threshold >80 MEV-cm

• Dose Rate Upset >10

-10

Errors/Bit-Day (Typ)

11

RAD (Si)/s, 20ns Pulse

2

/mg

• Latch-Up Free Under Any Conditions

• Military Temperature Range: -55

o

C to +125oC

• Significant Power Reduction Compared to ALSTTL Logic

• DC Operating Voltage Range: 4.5V to 5.5V

• Input Logic Levels

- VIL = 0.8V Max

- VIH = VCC/2V Min

• Input Current ≤1µA at VOL, VOH

Description

The Intersil ATCS374MS is a radiation hardened octal D-type
flip-flop with three-state outputs. The eight edge-triggered flip­flops enter data into their registers on the low to high transition of
clock (CP). The Output Enable (OEN) controls the three-state
outputs and is independent of the register operation. When OEN
is high, the outputs will be in the high impedance state.

The ACTS374MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of the
radiation hardened, high-speed, CMOS/SOS Logic Family.

Pinouts

20 LEAD CERAMIC DUAL-IN-LINE

MIL-STD-1835 DESIGNATOR CDIP2-T20, LEAD FINISH C

TOP VIEW

1

OE

Q0

2

D0

3

D1

4

Q1

5

Q2

6

D2

7
8

D3

9

Q3

GND

10

20 LEAD CERAMIC FLATPACK

MIL-STD-1835 DESIGNATOR CDFP4-F20, LEAD FINISH C

TOP VIEW

OE

Q0
D0
D1
Q1
Q2
D2
D3
Q3

GND

120
2
3
4
5
6
7
8
9
10

VCC

20

Q7

19

D7

18

D6

17

Q6

16

Q5

15

D5

14

D4

13
12

Q4

11

CP

19
18
17
16
15
14
13
12
11

VCC
Q7
D7
D6
Q6
Q5
D5
D4
Q4
CP

Ordering Information

PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE

ACTS374DMSR -55oC to +125oC Intersil Class S Equivalent 20 Lead SBDIP
ACTS374KMSR -55oC to +125oC Intersil Class S Equivalent 20 Lead Ceramic Flatpack
ACTS374D/Sample +25oC Sample 20 Lead SBDIP
ACTS374K/Sample +25oC Sample 20 Lead Ceramic Flatpack
ACTS374HMSR +25oC Die Die

Truth Table

INPUTS OUTPUTS

OE CP Dn Qn

LHH
LLL
LXXQ0
HXXZ

H = High Level
L = Low Level
X = Immaterial
Z = High Impedance

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

= Transition from Low to High Level

Q0 = the level of Q before the indicated input conditions

were established

1

Functional Diagram

1 OF 8

D

COMMON CONTROLS

CP

OE

FF

DQ

CP

Spec Number 518828

File Number 3998

Q

OE

Specifications ACTS374MS

Absolute Maximum Ratings Reliability Information

Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +6.0V

Input Voltage Range. . . . . . . . . . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±50mA

Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC

Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +265

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

(All Voltages Reference to VSS)

CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.

Operating Conditions

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Rise and Fall Times at 4.5V VCC (TR, TF). . . . . . 10ns/V Max

Operating Temperature Range (T

) . . . . . . . . . . . . -55oC to +125oC

A

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Impedance θ

DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72oC/W 24oC/W

Flatpack. . . . . . . . . . . . . . . . . . . . . . . . . . 107

Maximum Package Power Dissipation at +125

DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7W

o

C

Flatpack. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.5W

o

C

Maximum Device Power Dissipation. . . . . . . . . . . . . . . . . . .(TBD)W

JA

o

C/W 28oC/W

o

C

Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42 Gates

Input High Voltage (VIH). . . . . . . . . . . . . . . . . . . . . VCC to VCC/2V

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . . .0V to 0.8V

θ

JC

(NOTE 1)

PARAMETER SYMBOL

CONDITIONS

Supply Current ICC VCC = 5.5V,

VIN = VCC or GND

Output Current
(Source)

IOH VCC = VIH = 4.5V,

VOUT = VCC -0.4V,
VIL = 0V, (Note 2)

Output Current
(Sink)

IOL VCC = VIH = 4.5V,

VOUT = 0.4V, VIL = 0V,
(Note 2)

Output Voltage High VOH VCC = 5.5V, VIH = 2.75V

VIL = 0.8V, IOH = -50µA
VCC = 4.5V, VIH = 2.25V,

VIL = 0.8V, IOH = -50µA

Output Voltage Low VOL VCC = 5.5V, VIH = 2.75V

VIL = 0.8V, IOH = 50µA
VCC = 4.5V, VIH = 2.25V,

VIL = 0.8V, IOH = 50µA

Input Leakage
Current

IIN VCC = 5.5V,

VIN = VCC or GND

GROUP

LIMITS

A SUB-

GROUPS TEMPERATURE

1 +25

o

C-20µA

UNITSMIN MAX

2, 3 +125oC, -55oC - 400 µA

1 +25oC -12 - mA

2, 3 +125oC, -55oC-8-mA

1 +25oC12-mA

2, 3 +125oC, -55oC8-mA

1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V

1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1 +25oC-±0.5 µA

2, 3 +125oC, -55oC-±1.0 µA

Three-State Output
Leakage Current

IOZ VCC = 5.5V,

Force Voltage = 0V or VCC

1 +25oC-±1 µA

2, 3 +125oC, -55oC-±35 µA

Noise Immunity
Functional Test

FN VCC = 4.5V, VIH = 2.25V,

VIL = 0.8V, (Note 3)

7, 8A, 8B +25oC, +125oC, -55oC- - V

NOTE:

1. All voltages referenced to device GND.

2. Force/measure functions may be interchanged.

3. For functional tests, VO ≥4.0V is recognized as a logic “1”, and VO ≤0.5V is recognized as a logic “0”.

2

Spec Number 518828

Specifications ACTS374MS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP

(NOTES 1, 2)

PARAMETER SYMBOL

Propagation Delay TPHL1 VCC = 4.5V, VIH = 3.0V,

TPLH1 VCC = 4.5V, VIH = 3.0V,

TPZL1 VCC = 4.5V, VIH = 3.0V,

TPZH1 VCC = 4.5V, VIH = 3.0V,

TPLZ1 VCC = 4.5V, VIH = 3.0V,

TPHZ1 VCC = 4.5V, VIH = 3.0V,

NOTES:

1. All voltages referenced to device GND.

2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns.

CONDITIONS

VIL = 0V

VIL = 0V

VIL = 0V

VIL = 0V

VIL = 0V

VIL = 0V

A SUB-

GROUPS TEMPERATURE

10, 11 +125oC, -55oC 2 22 ns

10, 11 +125oC, -55oC 2 21 ns

10, 11 +125oC, -55oC 2 21 ns

10, 11 +125oC, -55oC 2 19 ns

10, 11 +125oC, -55oC 2 18 ns

10, 11 +125oC, -55oC 2 19 ns

LIMITS

UNITSMIN MAX

9 +25oC 2 19 ns

9 +25oC 2 18 ns

9 +25oC 2 18 ns

9 +25oC 2 17 ns

9 +25oC 2 16 ns

9 +25oC 2 16 ns

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS NOTE TEMP

Capacitance Power
Dissipation

Input Capacitance CIN VCC = 5.0V, VIH = 5.0V,

Output Capacitance COUT VCC = 5.0V, VIH = 5.0V,

Pulse Width Time TW VCC = 4.5V, VIH = 4.5V,

Setup Time TSU VCC = 4.5V, VIH = 4.5V,

Hold Time TH VCC = 4.5V, VIH = 4.5V,

Maximum FrequencyCPFMAX VCC = 4.5V, VIH = 4.5V,

CPD VCC = 5.0V, VIH = 5.0V,

VIL = 0V, f = 1MHz

VIL = 0V, f = 1MHz

VIL = 0V, f = 1MHz

VIL = 0V

VIL = 0V

VIL = 0V

VIL = 0V

1 +25oC - 18 - pF

1 +25oC--10pF

1 +25oC--20pF

1 +25oC 5.5 - - ns

1 +25oC 3.5 - - ns

1 +25oC 3.5 - - ns

1 +25oC 0 - 75 MHz

LIMITS

UNITSMIN TYP MAX

+125oC - 24 - pF

+125oC--10pF

+125oC--20pF

+125oC6--ns

+125oC4--ns

+125oC4--ns

+125oC 0 - 75 MHz

NOTE:

1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.

Spec Number 518828

3