Intersil Corporation ACS253MS Datasheet
November 1997
ACS253MS
Radiation Hardened
Dual 4-Input Multiplexer with Three-State Outputs
Features
• QML Qualified Per MIL-PRF-38535 Requirements
• 1.25Micron Radiation Hardened SOS CMOS
• Radiation Environment
- Latch-up Free Under any Conditions
- Total Dose. . . . . . . . . . . . . . . . . . . . . .3 x 10
- SEU Immunity. . . . . . . . . . . <1 x 10
-10
5
RAD(Si)
Errors/Bit/Day
- SEU LET Threshold . . . . . . . . . . .>100MeV/(mg/cm
• Input Logic Levels . . .V
= (0.3)(VCC), VIH = (0.7)(VCC)
IL
• Output Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . ±8mA
• Quiescent Supply Current. . . . . . . . . . . . . . . . . . . 400µs
• Propagation Delay
- Enable to Output . . . . . . . . . . . . . . . . . . . . . . . . . 12ns
- Input or Address to Output . . . . . . . . . . . . . . . . . 15ns
Applications
• Digital Channel Selection
• Data Routing
• High Frequency Switching
Description
The Radiation Hardened ACS253MS is a Dual 4-Channel Multiplexer ha ving two common binary control inputs for selecting 1
of 4 data channels. All inputs and outputs are buffered and are
designed for balanced propagation delay and transition times .
Separate Output Enable inputs are provided to ease system
design. When
output is configured into a high impedance state.
2
)
The ACS253MS is fabricated on a CMOS Silicon on Sapphire
(SOS) process, which provides an immunity to Single Event
Latch-up and the capability of highly reliable performance in
any radiation environment. These devices offer significant
power reduction and faster performance when compared to
ALSTTL types.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed below must be used when or dering.
Detailed Electrical Specifications for the ACS253 are
contained in SMD 5962-98007. A “hot-link” is provided
on our homepage with instructions for downloading.
http://www.intersil.com/data/sm/index.htm
OE1 or OE2 are set HIGH, the corresponding
Ordering Information
SMD PART NUMBER INTERSIL PART NUMBER TEMP. RANGE (oC) PACKAGE CASE OUTLINE
5962F9800701VEC ACS253DMSR-02 -55 to 125 16 Ld SBDIP CDIP2-T16
N/A ACS253D/Sample-02 25 16 Ld SBDIP CDIP2-T16
5962F9800701VXC ACS253KMSR-02 -55 to 125 16 Ld Flatpack CDFP4-F16
N/A ACS253K/Sample-02 25 16 Ld Flatpack CDFP4-F16
N/A ACS253HMSR-02 25 Die N/A
Pinouts
ACS253 (SBDIP)
1
1OE
2
S
1
3
1I
3
4
1I
2
5
1I
1
6
1I
0
1Y
7
8
GND
TOP VIEW
V
16
CC
15
2OE
14
S
0
13
2I
3
12
2I
2
11
2I
1
10
2I
0
9
2Y
1OE
S
1I
1I
1I
1I
1Y
GND
1
3
2
1
0
ACS253 (FLATPACK)
TOP VIEW
116
2
3
4
5
6
7
8
15
14
13
12
11
10
9
V
CC
2OE
S
0
2I
3
2I
2
2I
1
2I
0
2Y
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
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File Number 4428
Die Characteristics
ACS253MS
DIE DIMENSIONS:
Size: 2390µm x 2390µm (94 mils x 94 mils)
Thickness: 525µm ±25µm (20.6 mils ±1 mil)
Bond Pad: 110µm x 110µm (4.3 mils x 4.3 mils)
METALLIZATION:
Type: Al
Metal 1 Thickness: 0.7µm ±0.1µm
Metal 2 Thickness: 1.0µm ±0.1µm
SUBSTRATE
Silicon on Sapphire (SOS)
SUBSTRATE POTENTIAL:
Unbiased Insulator
Metallization Mask Layout
BACKSIDE FINISH:
PASSIVATION:
SPECIAL INSTRUCTIONS:
ADDITIONAL INFORMATION:
ACS253MS
S1 10E V
Sapphire
Type: Phosphorous Silicon Glass (PSG)
Thickness: 1.30µm ±0.15µm
Bond V
Worst Case Density: <2.0 x 10
CC
First
5
A/cm
Transistor Count: 140
20E
CC
2
1T
1I
3
1I
2
1I
1
0
1Y GND 2Y 2I
0
S
0
2I
3
2I
2
2I
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