Intersil Corporation ACS20MS Datasheet

April 1995

ACS20MS

Radiation Hardened

Dual 4-Input NAND Gate

Features

• 1.25 Micron Radiation Hardened SOS CMOS

• Total Dose 300K RAD (Si)

• Single Event Upset (SEU) Immunity
<1 x 10

• SEU LET Threshold >80 MEV-cm

• Dose Rate Upset >10

-10

Errors/Bit-Day (Typ)

11

RAD (Si)/s, 20ns Pulse

2

/mg

• Latch-Up Free Under Any Conditions

o

• Military Temperature Range: -55

C to +125oC

• Significant Power Reduction Compared to ALSTTL Logic

• DC Operating Voltage Range: 4.5V to 5.5V

• Input Logic Levels

- VIL = 30% of VCC Max

- VIH = 70% of VCC Min

• Input Current ≤1µA at VOL, VOH

Description

The Intersil ACS20MS is a radiation hardened dual 4-input
NAND gate. A low on any input forces the output to a high logic
state.

The ACS20MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of the
radiation hardened, high-speed, CMOS/SOS Logic Family.

Pinouts

14 LEAD CERAMIC DUAL-IN-LINE

MIL-STD-1835 DESIGNATOR, CDIP2-T14, LEAD FINISH C

TOP VIEW

A1

1
2

B1

3

NC

4

C1

5

D1

6

Y1

7

GND

14 LEAD CERAMIC FLATPACK

MIL-STD-1835 DESIGNATOR, CDFP3-F14, LEAD FINISH C

TOP VIEW

A1
B1

NC

C1
D1
Y1

GND

1
2
3
4
5
6
7

14

VCC

13

D2

12

C2

11

NC

10

B2

9

A2

8

Y2

14
13

12
11
10

9
8

VCC
D2
C2
NC
B2
A2
Y2

Ordering Information

PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE

ACS20DMSR -55oC to +125oC Intersil Class S Equivalent 14 Lead SBDIP
ACS20KMSR -55oC to +125oC Intersil Class S Equivalent 14 Lead Ceramic Flatpack
ACS20D/Sample +25oC Sample 14 Lead SBDIP
ACS20K/Sample +25oC Sample 14 Lead Ceramic Flatpack
ACS20HMSR +25oC Die Die

Truth Table

INPUTS OUTPUT

An Bn Cn Dn Yn

LXXX H
XLXX H
XXLX H
XXXL H

HHHH L

NOTE: L = Logic Level Low, H = Logic level High, X = Don’t Care

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

Functional Diagram

(1, 9)

An
Bn

(2, 10)

(4, 12)

Cn
Dn

(5, 13)

1

Spec Number 518815

File Number 3616

(6, 8)

Yn

Specifications ACS20MS

Absolute Maximum Ratings Reliability Information

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +6.0V

Input Voltage Range. . . . . . . . . . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±50mA

Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC

Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +265oC

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

(All Voltages Reference to VSS)

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Operating Conditions

Supply Voltage Range . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Rise and Fall Time at 4.5V VCC (TR, TF). . . . . . .10ns/V Max

Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Impedance θ

DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W

Flatpack. . . . . . . . . . . . . . . . . . . . . . . . . . 116oC/W 30oC/W

Maximum Package Power Dissipation at +125oC

DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7W

Flatpack. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4W

Maximum Device Power Dissipation. . . . . . . . . . . . . . . . . . .(TBD)W

Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34 Gates

Input High Voltage (VIH). . . . . . . . . . . . . . . . . .VCC to 70% of VCC

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . .0V to 30% of VCC

JA

θ

JC

(NOTE 1)

PARAMETER SYMBOL

Supply Current ICC VCC = 5.5V,

Output Current
(Source)

Output Current
(Sink)

Output Voltage High VOH VCC = 5.5V, VIH = 3.85V,

Output Voltage Low VOL VCC = 5.5V, VIH = 3.85V,

Input Leakage
Current

IOH VCC = 4.5V, VIH = 4.5V,

IOL VCC = 4.5V, VIH = 4.5V,

IIN VCC = 5.5V,

CONDITIONS

VIN = VCC or GND

VOUT = VCC -0.4V,
VIL = 0V, (Note 2)

VOUT = 0.4V, VIL = 0V,
(Note 2)

VIL = 1.65V, IOH = -50µA

VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOH = -50µA

VIL = 1.65V, IOL = 50µA

VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOL = 50µA

VIN = VCC or GND

GROUP

A SUB-

GROUPS TEMPERATURE

1 +25oC-5µA

2, 3 +125oC, -55oC - 100 µA

1 +25oC -12 - mA

2, 3 +125oC, -55oC-8-mA

1 +25oC12-mA

2, 3 +125oC, -55oC8-mA

1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V

1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1 +25oC-±0.5 µA

2, 3 +125oC, -55oC-±1.0 µA

LIMITS

UNITSMIN MAX

Noise Immunity
Functional Test

NOTES:

1. All voltages referenced to device GND.

2. Force/Measure functions may be interchanged.

3. For functional tests, VO ≥4.0V is recognized as a logic “1”, and VO ≤0.5V is recognized as a logic “0”.

FN VCC = 4.5V, VIH = 3.15V,

VIL = 1.35V, (Note 3)

7, 8A, 8B +25oC, +125oC, -55oC- - V

2

Spec Number 518815

Specifications ACS20MS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP

PARAMETER SYMBOL

Propagation Delay
Input to Output

(NOTES 1, 2)

CONDITIONS

TPHL VCC = 4.5V, VIH = 4.5V,

VIL = 0V

TPLH VCC = 4.5V, VIH = 4.5V,

A SUB-

GROUPS TEMPERATURE

o

9 +25

10, 11 +125

C 2 12 ns

o

C, -55oC 2 15 ns

VIL = 0V

NOTES:

1. All voltages referenced to device GND.

2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS NOTE TEMP

o

Capacitance Power
Dissipation

CPD VCC = 5.0V, VIH = 5.0V,

VIL = 0V, f = 1MHz

Input Capacitance CIN VCC = 5.0V, VIH = 5.0V,

VIL = 0V, f = 1MHz

1 +25

1 +25

C - 18 - pF

o

C - 20 - pF

+125

o

C--10pF

o

+125

C--10pF

NOTE:

1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.

LIMITS

UNITSMIN MAX

LIMITS

UNITSMIN TYP MAX

TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

(NOTE 1)

PARAMETER SYMBOL

Supply Current ICC VCC = 5.5V, VIN = VCC or GND +25
Output Current

(Source)

IOH VCC = VIH = 4.5V,

VOUT = VCC -0.4V, VIL = 0

Output Current (Sink) IOL VCC = VIH = 4.5V,

CONDITIONS TEMPERATURE

o

C - 100 µA

o

C -8.0 - mA

+25

o

+25

C 8.0 - mA

VOUT = 0.4V, VIL = 0

o

Output Voltage High VOH VCC = 5.5V, VIH = 3.85V,

C VCC -0.1 - V

+25

VIL = 1.65V, IOH = -50µA
VCC = 4.5V, VIH = 3.15V,

o

+25

C VCC -0.1 - V

VIL = 1.35V, IOH = -50µA

o

Output Voltage Low VOL VCC = 5.5V, VIH = 3.85V,

C - 0.1 V

+25

VIL = 1.65V, IOL = 50µA

o

VCC = 4.5V, VIH = 3.15V,

C - 0.1 V

+25

VIL = 1.35V, IOL = 50µA
Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND +25
Noise Immunity

Functional Test
Propagation Delay

Input to Output

FN VCC = 4.5V , VIH = 3.15V,

VIL = 1.35V , (Note 2)

TPHL

VCC = 4.5V, VIH = 4.5V, VIL = 0V +25

TPLH

o

C-±1 µA

o

C--V

+25

o

C 2 15 ns

NOTES:

1. All voltages referenced to device GND.

2. For functional tests, VO ≥4.0V is recognized as a logic “1”, and VO ≤0.5V is recognized as a logic “0”.

RAD LIMITS

UNITSMIN MAX

o

TABLE 5. DELTA PARAMETERS (+25

C)

(NOTE 1)

PARAMETER SYMBOL

DELTA LIMIT UNITS

Supply Current ICC ±1.0 µA
Output Current IOL/IOH ±15 %

NOTE:

1. All delta calculations are referenced to 0 hour readings or pre-life readings.

3

Spec Number 518815