Intersil Corporation ACS151MS Datasheet

ACS151MS

November 1997

Features

• QML Qualified Per MIL-PRF-38535 Requirements

• 1.25Micron Radiation Hardened SOS CMOS

• Radiation Environment

- Latch-up Free Under any Conditions

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- Total Dose. . . . . . . . . . . . . . . . . . . . . .3 x 10

- SEU Immunity. . . . . . . . . . . <1 x 10

-10

RAD(Si)

Errors/Bit/Day

- SEU LET Threshold . . . . . . . . . . .>100MeV/(mg/cm

• Input Logic Levels . . .V

= (0.3)(VCC), VIH = (0.7)(VCC)

IL

• Output Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . ±8mA

• Quiescent Supply Current. . . . . . . . . . . . . . . . . . .400µA

• Propagation Delay

- Enable to Output . . . . . . . . . . . . . . . . . . . . . . . . . 12ns

- Input or Address to Output . . . . . . . . . . . . . . . . . 20ns

Applications

• Sensor Input Selection

• Data Routing

• High Frequency Switching

Radiation Hardened 8-Input Multiplexer

Description

The Radiation Hardened ACS151MS is an 8-Channel Multi­plexer having three binary control inputs and an active low
enable input. The three binary input signals select the input
from 1 of 8 channels.

Complementary data outputs are provided for ease of system
design. If the enable input is high, the input signals are disre­garded, the

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)

inputs and outputs are buffered and are designed for balanced
propagation delay and transition times.

The ACS151MS is fabricated on a CMOS Silicon on Sapphire
(SOS) process, which provides an immunity to Single Event
Latch-up and the capability of highly reliable performance in
any radiation environment. These devices offer significant
power reduction and faster performance when compared to
ALSTTL types.

Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed below must be used when or dering.

Detailed Electrical Specifications for the ACS151 are
contained in SMD 5962-97640. A “hot-link” is provided
on our homepage with instructions for downloading.
http://www.intersil.com/data/sm/index.htm

Y output is set high and the Y output is set low. All

Ordering Information

SMD PART NUMBER INTERSIL PART NUMBER TEMP. RANGE (oC) PACKAGE CASE OUTLINE

5962F9764001VEC ACS151DMSR-02 -55 to 125 16 Ld SBDIP CDIP2-T16
N/A ACS151D/Sample-02 25 16 Ld SBDIP CDIP2-T16
5962F9764001VXC ACS151KMSR-02 -55 to 125 16 Ld Flatpack CDFP4-F16
N/A ACS151K/Sample-02 25 16 Ld Flatpack CDFP4-F16
N/A ACS151HMSR-02 25 Die N/A

Pinouts

ACS151 (SBDIP)

1

I

3

2

I

2

3

I

1

4

I

0

5

Y

6

Y

7

E

8

GND

TOP VIEW

V

16

CC

15

I

4

14

I

5

13

I

6

12

I

7

11

S

0

10

S

1

9

S

2

GND

I

3

I

2

I

1

I

0

Y
Y
E

ACS151 (FLATPACK)

TOP VIEW

116
2
3
4
5
6
7
8

15
14
13
12
11
10

9

V

CC

I

4

I

5

I

6

I

7

S

0

S

1

S

2

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

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File Number 4430

Die Characteristics

ACS151MS

DIE DIMENSIONS:

Size: 2390µm x 2390µm (94mils x 94mils)
Thickness: 525µm ±25µm (20.6mils ±1mil)
Bond Pad: 110µm x 110µm (4.3mils x 4.3 mils)

METALLIZATION:

Type: Al
Metal 1 Thickness: 0.7µm ±0.1µm
Metal 2 Thickness: 1.0µm ±0.1µm

SUBSTRATE:

Silicon on Sapphire (SOS)

SUBSTRATE POTENTIAL:

Metallization Mask Layout

I

2

Unbiased Insulator

BACKSIDE FINISH:

Sapphire

PASSIVATION:

Type: Phosphorous Silicon Glass (PSG)
Thickness: 1.30µm ±0.15µm

SPECIAL INSTRUCTIONS

Bond V

CC

First

ADDITIONAL INFORMATION:

Worst Case Density: <2.0 x 10

Transistor Count: 166

ACS151MS

I

V

3

CC

I

4

5

A/cm

2

I

1

I

0

Y

Y

E GND S

S

2

1

I

5

I

6

I

7

S

0

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and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
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