Intersil Corporation ACS147MS Datasheet

ACS147MS
Data Sheet July 1999
Radiation Hardened 10-to-4 Line Priority Encoder
These nine-input priority encoders accept data from nine active LOW inputs and provide a binary representation on the four active LOW outputs. A priority is assigned to each input so that when two or more inputs are simultaneously active, the input with the highest priority is represented on the output. Input line I9 has the highest priority.
These devices provide the 10-to-4-line priority encoding function by use of the implied decimal “zero”. The “zero” is encoded when all nine data inputs are HIGH, forcing all four outputs HIGH.
The ACS147MS is fabricated on a CMOS Silicon on Sapphire (SOS) process, which provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment.
Specifications for Rad Hard QML devices are controlled by the DefenseSupply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering.
Detailed Electrical Specifications for the ACS147MS are contained in SMD 5962-98633. A “hot-link” is provided on our homepage for downloading. http://www.intersil.com/spacedefense/spaceselect.htm
File Number 4761
Features
• QML Qualified Per MIL-PRF-38535 Requirements
• 1.25 Micron Radiation Hardened SOS CMOS
• Radiation Environment
- Latch-Up Free Under Any Conditions
- Total Dose (Max.) . . . . . . . . . . . . . . . . . 3 x 10
- SEU Immunity. . . . . . . . . . . . .<1 x 10
-10
5
RAD(Si)
Errors/Bit/Day
- SEU LET Threshold . . . . . . . . . . . . >100MeV/(mg/cm
• Input Logic Levels. . . . V
= (0.3)(VCC), VIH = (0.7)(VCC)
IL
• Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . ±12mA (Min)
• Quiescent Supply Current . . . . . . . . . . . . . . . 20µA (Max)
• Propagation Delay . . . . . . . . . . . . . . . . . . . . . .17ns (Max)
Applications
• High Speed Control Circuits
• Sensor Monitoring
• Low Power Designs
2
)
Ordering Information
INTERNAL MARKETING
ORDERING NUMBER
5962F9863301VCC ACS147DMSR-03 -55 to 125 16 Ld SBDIP CDIP2-T16 ACS147D/SAMPLE-03 ACS147D/SAMPLE-03 25 16 Ld SBDIP CDIP2-T16 5962F9863301VXC ACS147KMSR-03 -55 to 125 16 Ld Flatpack CDFP4-F16 ACS147K/SAMPLE-03 ACS147K/SAMPLE-03 25 16 Ld Flatpack CDFP4-F16 5962F9863301V9A ACS147HMSR-03 25 Die NA
NUMBER TEMP. RANGE (oC) PACKAGE DESIGNATOR
Pinouts
Y2 Y1
GND
I4 I5 I6 I7 I8
ACS147MS
(SBDIP)
TOP VIEW
1 2 3 4 5 6 7 8
16
V
CC
15
NC
14
Y3
13
I3
12
I2
11
I1
10
I9
9
Y0
I4 I5 I6 I7
I8 Y2 Y1
GND
ACS147MS
(FLATPACK)
TOP VIEW
116 2 3 4 5 6 7 8
15 14 13 12 11 10
9
V NC Y3 I3 I2 I1 I9 Y0
CC
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Die Characteristics
ACS147MS
DIE DIMENSIONS:
Size: 2390µm x 2390µm (94 mils x 94 mils) Thickness: 525µm ±25µm (20.6 mils ±1 mil) Bond Pad: 110µm x 110µm (4.3 x 4.3 mils)
METALLIZATION: AI
Metal 1 Thickness: 0.7µm ±0.1µm Metal 2 Thickness: 1.0µm ±0.1µm
SUBSTRATE POTENTIAL
Unbiased Insulator
Metallization Mask Layout
I6 (3)
PASSIVATION:
Type: Phosphorous Silicon Glass (PSG) Thickness: 1.30µm ±0.15µm
SPECIAL INSTRUCTIONS
Bond V
ADDITIONAL INFORMATION:
Worst Case Current Density: <2.0 x 10 Transistor Count: 233
ACS147MS
I5 I4
(2) (1) (16) NC
V
CC
CC
First
(14)
Y3
5
A/cm
2
I3
I7 (4)
I8 (5)
Y2 (6)
(7) (8) (9) (10)
I9Y0GNDY1
(13)
(12) I2
(11)
I1
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Intersil semiconductor products are sold by description only .Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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