Intersil Corporation ACS139MS Datasheet

November 1997

ACS139MS

Radiation Hardened

Dual 2-to-4 Line Decoder/Demultiplexer

Features

• QML Qualified Per MIL-PRF-38535 Requirements

• 1.25Micron Radiation Hardened SOS CMOS

• Radiation Environment

- Latch-up Free Under any Conditions

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- Total Dose. . . . . . . . . . . . . . . . . . . . . .3 x 10

- SEU Immunity. . . . . . . . . . . <1 x 10

-10

RAD(Si)

Errors/Bit/Day

- SEU LET Threshold . . . . . . . . . . .>100MeV/(mg/cm

• Input Logic Levels . . .V

= (0.3)(VCC), VIH = (0.7)(VCC)

IL

• Output Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . ±8mA

• Quiescent Supply Current. . . . . . . . . . . . . . . . . . .400µA

• Propagation Delay

- Enable to Output . . . . . . . . . . . . . . . . . . . . . . . . . 13ns

- Address to Output . . . . . . . . . . . . . . . . . . . . . . . .15ns

Applications

• Memory Decoding

• Data Routing

• Code conversion

Description

The Radiation Hardened ACS139MS contains two indepen­dent binary to one-of-four decoders, each with a single active
low enable input. Data on the select inputs cause one of the
four normally high outputs to go low .

If the enable input is high, all four outputs remain high. During
demultiplexer operation the enable input acts as the data input.
The enable input also functions as a chip select when the

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)

devices are cascaded.
The ACS139MS is fabricated on a CMOS Silicon on Sapphire

(SOS) process, which provides an immunity to Single Event
Latch-up and the capability of highly reliable performance in
any radiation environment. These devices offer significant
power reduction and faster performance when compared to
ALSTTL types.

Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed below must be used when or dering.

Detailed Electrical Specifications for the ACS139 are
contained in SMD 5962-97639. A “hot-link” is provided
on our homepage with instructions for downloading.
http://www.semi.Intersil.com/data/sm/index.htm

Ordering Information

SMD PART NUMBER INTERSIL PART NUMBER TEMP. RANGE (oC) PACKAGE CASE OUTLINE

5962F9763901VEC ACS139DMSR-02 -55 to 125 16 Ld SBDIP CDIP2-T16
N/A ACS139D/Sample-02 25 16 Ld SBDIP CDIP2-T16
5962F9763901VXC ACS139KMSR-02 -55 to 125 16 Ld Flatpack CDFP4-F16
N/A ACS139K/Sample-02 25 16 Ld Flatpack CDFP4-F16
N/A ACS139HMSR-02 25 Die N/A

Pinouts

ACS139 (SBDIP)

1

1E

2

1A0

3

1A1

4

1Y0

5

1Y1

6

1Y2

7

1Y3

8

GND

TOP VIEW

V

16

CC

15

2E

14

2A0

13

2A1

12

2Y0

11

2Y1

10

2Y2

9

2Y3

1E
1A0
1A1
1Y0
1Y1
1Y2
1Y3

GND

ACS139 (FLATPACK)

TOP VIEW

116
2
3
4
5
6
7
8

15
14
13
12
11
10

9

V

CC

2E
2A0
2A1
2Y0
2Y1
2Y2
2Y3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

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File Number 4431

Die Characteristics

ACS139MS

DIE DIMENSIONS:

Size: 2390µm x 2390µm (94 mils x 94 mils)
Thickness: 525µm ±25µm (20.6 mils ±1 mil)
Bond Pad: 110µm x 110µm (4.3 mils x 4.3 mils)

METALLIZATION:

Type: Al
Metal 1 Thickness: 0.7µm ±0.1µm
Metal 2 Thickness: 1.0µm ±0.1µm

SUBSTRATE:

Silicon on Sapphire (SOS)

Metallization Mask Layout

SUBSTRATE POTENTIAL:

BACKSIDE FINISH:

PASSIVATION

SPECIAL INSTRUCTIONS:

ADDITIONAL INFORMATION:

ACS139MS.

1A0 1E V

Unbiased Insulator

Sapphire

Type: Phosphorous Silicon Glass (PSG)
Thickness: 1.30µm ±0.15µm

Bond V

Worst Case Density: <2.0 x 10

CC

First

5

A/cm

Transistor Count: 190

2E

CC

2

1A1

1Y0

1Y1

1Y2

1Y3 GND 2Y3 2Y2

2A0

2A1

2Y0

2Y1

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Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under an y patent or patent rights of Intersil or its subsidiaries.

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