Intersil Corporation ACS10MS Datasheet

April 1995

ACS10MS

Radiation Hardened

Triple Three-Input NAND Gate

Features

• 1.25 Micron Radiation Hardened SOS CMOS

• Total Dose 300K RAD (Si)

• Single Event Upset (SEU) Immunity
<1 x 10

• SEU LET Threshold >80 MEV-cm

• Dose Rate Upset >10

-10

Errors/Bit-Day (Typ)

11

RAD (Si)/s, 20ns Pulse

2

/mg

• Latch-Up Free Under Any Conditions

• Military Temperature Range: -55

o

C to +125oC

• Significant Power Reduction Compared to ALSTTL Logic

• DC Operating Voltage Range: 4.5V to 5.5V

• Input Logic Levels

- VIL = 30% of VCC Max

- VIH = 70% of VCC Min

• Input Current ≤1µA at VOL, VOH

Description

The Intersil ACS10MS is a radiation hardened triple three-input
NAND gate. A high on all inputs forces the output to a low state.

The ACS10MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of the
radiation hardened, high-speed, CMOS/SOS Logic Family.

Pinouts

14 LEAD CERAMIC DUAL-IN-LINE

MIL-STD-1835 DESIGNATOR CDIP2-T14, LEAD FINISH C

TOP VIEW

A1

1
2

B1

3

A2

4

B2

5

C2

6

Y2

7

GND

14 LEAD CERAMIC FLATPACK

MIL-STD-1835 DESIGNATOR CDFP3-F14, LEAD FINISH C

TOP VIEW

1A1
B1
A2
B2
C2
Y2

GND

2

3

4

5

6

7

14

VCC

13

C1

12

Y1

11

C3

10

B3

9

A3

8

Y3

14
13

12
11
10

9
8

VCC
C1
Y1
C3
B3
A3
Y3

Ordering Information

PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE

ACS10DMSR -55oC to +125oC Intersil Class S Equivalent 14 Lead SBDIP
ACS10KMSR -55oC to +125oC Intersil Class S Equivalent 14 Lead Ceramic Flatpack
ACS10D/Sample +25oC Sample 14 Lead SBDIP
ACS10K/Sample +25oC Sample 14 Lead Ceramic Flatpack
ACS10HMSR +25oC Die Die

Truth Table

INPUTS OUTPUT

An Bn Cn Yn

LLL H
LLH H
LHL H

LHH H
HLL H
HLH H
HHL H
HHH L

NOTE: L = Logic Level Low, H = Logic Level High

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

Functional Diagram

An

(1, 3, 9)

Bn Yn

(2, 4, 10)

Cn

(5, 11, 13)

1

Spec Number 518814

File Number 3630

(6, 8, 12)

Specifications ACS10MS

Absolute Maximum Ratings Reliability Information

Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +6.0V

Input Voltage Range. . . . . . . . . . . . . . . . . . . . . .-0.5V to VCC +0.5V

DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA

DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±50mA

Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC

Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +265

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175

ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1

(All Voltages Reference to VSS)

CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.

Operating Conditions

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V

Input Rise and Fall Times at 4.5V VCC (TR, TF). . . . . . 10ns/V Max

Operating Temperature Range (T

) . . . . . . . . . . . . -55oC to +125oC

A

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Thermal Impedance θ

DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W

Flatpack. . . . . . . . . . . . . . . . . . . . . . . . . . 116

Maximum Package Power Dissipation at +125

DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7W

o

C

Flatpack. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4W

o

C

Maximum Device Power Dissipation. . . . . . . . . . . . . . . . . . .(TBD)W

JA

o

C/W 30oC/W

o

C

Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42 Gates

Input High Voltage (VIH). . . . . . . . . . . . . . . . . . VCC to 70% of VCC

Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . .0V to 30% of VCC

θ

JC

(NOTE 1)

PARAMETER SYMBOL

CONDITIONS

Supply Current ICC VCC = 5.5V,

VIN = VCC or GND

Output Current
(Source)

IOH VCC = VIH = 4.5V,

VOUT = VCC -0.4V,
VIL = 0V, (Note 2)

Output Current
(Sink)

IOL VCC = VIH = 4.5V,

VOUT = 0.4V, VIL = 0V,
(Note 2)

Output Voltage High VOH VCC = 5.5V, VIH = 3.85V

VIL = 1.65V, IOH = -50µA
VCC = 4.5V, VIH = 3.15V,

VIL = 1.35V, IOH = -50µA

Output Voltage Low VOL VCC = 5.5V, VIH = 3.85V

VIL = 1.65V, IOH = 50µA
VCC = 4.5V, VIH = 3.15V,

VIL = 1.35V, IOH = 50µA

Input Leakage
Current

IIN VCC = 5.5V,

VIN = VCC or GND

GROUP

LIMITS

A SUB-

GROUPS TEMPERATURE

1 +25

o

C-5µA

UNITSMIN MAX

2, 3 +125oC, -55oC - 100 µA

1 +25oC -12 - mA

2, 3 +125oC, -55oC-8-mA

1 +25oC12-mA

2, 3 +125oC, -55oC8-mA

1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V

1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1, 2, 3 +25oC, +125oC, -55oC - 0.1 V

1 +25oC-±0.5 µA

2, 3 +125oC, -55oC-±1.0 µA

Noise Immunity
Functional Test

FN VCC = 4.5V, VIH = 3.15V,

VIL = 1.35V, (Note 3)

7, 8A, 8B +25oC, +125oC, -55oC- - V

NOTE:

1. All voltages referenced to device GND.

2. Force/measure functions may be interchanged.

3. For functional tests, VO ≥4.0V is recognized as a logic “1”, and VO ≤0.5V is recognized as a logic “0”.

2

Spec Number 518814

Specifications ACS10MS

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

GROUP

(NOTES 1, 2)

PARAMETER SYMBOL

Propagation Delay TPHL VCC = 4.5V, VIH = 4.5V,

TPLH VCC = 4.5V, VIH = 4.5V,

NOTES:

1. All voltages referenced to device GND.

2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

PARAMETER SYMBOL CONDITIONS NOTE TEMP

Capacitance Power
Dissipation

Input Capacitance CIN VCC = 5.0V, VIH = 5.0V,

NOTE:

1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.

CPD VCC = 5.0V, VIH = 5.0V,

CONDITIONS

VIL = 0V

VIL = 0V

VIL = 0V, f = 1MHz

VIL = 0V, f = 1MHz

A SUB-

GROUPS TEMPERATURE

9 +25oC 2 13 ns

10, 11 +125oC, -55oC 2 16 ns

9 +25oC 2 12 ns

10, 11 +125oC, -55oC 2 15 ns

1 +25oC - 30 - pF

+125oC - 32 - pF

1 +25oC--10pF

+125oC--10pF

LIMITS

UNITSMIN MAX

LIMITS

UNITSMIN TYP MAX

TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS

(NOTE 1)

PARAMETER SYMBOL

Supply Current ICC VCC = 5.5V, VIN = VCC or GND +25oC - 100 µA
Output Current (Source) IOH VCC = VIH = 4.5V,

VOUT = VCC -0.4V, VIL = 0

Output Current (Sink) IOL VCC = VIH = 4.5V, VOUT = 0.4V,

VIL = 0

Output Voltage High VOH VCC = 5.5V, VIH = 3.85V,

VIL = 1.65V, IOH = -50µA
VCC = 4.5V, VIH = 3.15V,

VIL = 1.35V, IOH = -50µA

Output Voltage Low VOL VCC = 5.5V, VIH = 3.85V,

VIL = 1.65V, IOH = 50µA
VCC = 4.5V, VIH = 3.15V,

VIL = 1.35V, IOH = 50µA
Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND +25oC-±1 µA
Noise Immunity

Functional Test
Propagation Delay

Input to Output

NOTES:

1. All voltages referenced to device GND.

2. For functional tests, VO ≥4.0V is recognized as a logic “1”, and VO ≤0.5V is recognized as a logic “0”.

FN VCC = 4.5V, VIH = 3.15V,

VIL = 1.35V, (Note 2)

TPHL VCC = 4.5V, VIH = 4.5V, VIL = 0V +25oC 2 16 ns
TPLH VCC = 4.5V, VIH = 4.5V, VIL = 0V +25oC 2 15 ns

CONDITIONS TEMP

+25oC-8 -mA

+25oC8 -mA

+25oC VCC -0.1 - V

+25oC VCC -0.1 - V

+25oC - 0.1 V

+25oC - 0.1 V

+25oC- -V

RAD LIMITS

UNITSMIN MAX

Spec Number 518814

3