Intersil Corporation ACS04MS Datasheet

ACS04MS
Data Sheet November 1998 File Number 4541
Radiation Hardened Hex Inverter
The Radiation Hardened ACS04MS is a Hex Inverter. This device simply inverts the level present on each input. All inputs are buffered and the outputs are designed for balanced propagation delay and transition times.
The ACS04MS is fabricatedonaCMOSSilicononSapphire (SOS) process, which provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. These devices offer significant power reduction and faster performance when compared to ALSTTL types.
Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed below must be used when ordering.
Detailed Electrical Specifications for the ACS04MS are contained in SMD 5962-98603. A “hot-link” is provided on our homepage with instructions for downloading. www.intersil.com/data/sm/index.asp
Ordering Information
Features
• QML Qualified Per MIL-PRF-38535 Requirements
• 1.25 Micron Radiation Hardened SOS CMOS
• Radiation Environment
- Latch-Up Free Under Any Conditions
- Total Dose. . . . . . . . . . . . . . . . . . . . . . 3 x 10
- SEU Immunity. . . . . . . . . . . . <1 x 10
-10
5
RAD(Si)
Errors/Bit/Day
- SEU LET Threshold . . . . . . . . . . . >100MeV/(mg/cm
• Input Logic Levels. . . . V
= (0.3)(VCC), VIH = (0.7)(VCC)
IL
• Output Current . . . . . . . . . . . . . . . . . . . . . . . . ±8mA (Min)
• Quiescent Supply Current . . . . . . . . . . . . . . 100µA (Max)
• Propagation Delay . . . . . . . . . . . . . . . . . . . . . .15ns (Max)
Applications
• High Speed Control Circuits
• Sensor Monitoring
• Low Power Designs
2
)
ORDERING NUMBER INTERNAL MKT. NUMBER TEMP. RANGE (oC) PACKAGE DESIGNATOR
5962F9860301VCC ACS04DMSR-03 -55 to 125 14 Ld SBDIP CDIP2-T14 ACS04D/SAMPLE-03 ACS04D/SAMPLE-03 25 14 Ld SBDIP CDIP2-T14 5962F9860301VXC ACS04KMSR-03 -55 to 125 14 Ld Flatpack CDFP4-F14 ACS04K/SAMPLE-03 ACS04K/SAMPLE-03 25 14 Ld Flatpack CDFP4-F14 5962F9860301V9A ACS04HMSR-03 25 Die N/A
Pinouts
A1 Y1 A2 Y2 A3 Y3
GND
ACS04MS
(SBDIP)
TOP VIEW
1 2 3 4 5 6 7
14
V
CC
A6
13
Y6
12
A5
11
Y5
10
A4
9
Y4
8
Y1 A2 Y2 A3 Y3
GND
ACS04MS
(FLATPACK)
TOP VIEW
1A1 2 3 4 5 6 7
14 13
12 11 10
9 8
V A6 Y6 A5 Y5 A4 Y4
CC
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Die Characteristics
ACS04MS
DIE DIMENSIONS:
Size: 2390µm x 2390µm (94 mils x 94 mils) Thickness: 525µm ±25µm (20.6 mils ±1 mil) Bond Pad: 110µm x 110µm (4.3 x 4.3 mils)
METALLIZATION: AI
Metal 1 Thickness: 0.7µm ±0.1µm Metal 2 Thickness: 1.0µm ±0.1µm
SUBSTRATE POTENTIAL:
Unbiased Insulator
Metallization Mask Layout
A2 (3)
ACS04MS
Y1 A1 V (2) (1)
PASSIVATION:
Type: Phosphorous Silicon Glass (PSG) Thickness: 1.30µm ±0.15µm
SPECIAL INSTRUCTIONS:
CC
First
Bond V
ADDITIONAL INFORMATION:
Worst Case Current Density: <2.0 x 10 Transistor Count: 82
A6
CC
(14)
(13)
(12)
Y6
5
A/cm
2
Y2 (4)
NC
A3 (5)
(6) (7) (8) (9)
A4Y4GNDY3
(11) A5
NC
(10) Y5
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Intersil semiconductor productsare sold by description only. IntersilCorporation reserves theright to make changes incircuit design and/or specifications atany time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However,no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA
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