Intersil Corporation ACS00MS Datasheet

April 1995
ACS00MS
Radiation Hardened
Quad 2-Input NAND Gate
Features
• 1.25 Micron Radiation Hardened SOS CMOS
• Total Dose 300K RAD (Si)
• Single Event Upset (SEU) Immunity <1 x 10
• SEU LET Threshold >80 MEV-cm
• Dose Rate Upset >10
-10
Errors/Bit-Day (Typ)
11
RAD (Si)/s, 20ns Pulse
2
/mg
• Latch-Up Free Under Any Conditions
o
• Military Temperature Range: -55
C to +125oC
• Significant Power Reduction Compared to ALSTTL Logic
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
• Input Current 1µA at VOL, VOH
Description
The Intersil ACS00MS is a Radiation Hardened quad 2-Input NAND gate. A high logic level on both inputs forces the output to a logic low state.
The ACS00MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radi­ation hardened, high-speed, CMOS/SOS Logic Family.
Pinouts
MIL-STD-1835 DESIGNATOR, CDIP2-T14, LEAD FINISH C
TOP VIEW
A1
1 2
B1
3
Y1
4
A2
5
B2
6
Y2
7
GND
14 LEAD CERAMIC FLAT PACK
MIL-STD-1835 DESIGNATOR, CDFP3-F14, LEAD FINISH C
TOP VIEW
A1 B1 Y1 A2 B2 Y2
GND
1 2 3 4 5 6 7
14
VCC
13
B4
12
A4
11
Y4
10
B3
9
A3
8
Y3
14 13
12 11 10
9 8
VCC B4 A4 Y4 B3 A3 Y3
Ordering Information
PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE
ACS00DMSR -55oC to +125oC Intersil Class S Equivalent 14 Lead SBDIP ACS00KMSR -55oC to +125oC Intersil Class S Equivalent 14 Lead Ceramic Flatpack ACS00D/Sample +25oC Sample 14 Lead SBDIP ACS00K/Sample +25oC Sample 14 Lead Ceramic Flatpack ACS00HMSR +25oC Die Die
Truth Table
INPUTS OUTPUT
An Bn Yn
LLH
LHH HLH HHL
NOTE: L = Logic Level Low, H = Logic Level High
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
Functional Diagram
An
Bn
1
Spec Number
File Number 3563.1
Yn
518813
Specifications ACS00MS
Absolute Maximum Ratings Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to +6.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input. . . . . . . . . . . . . . . . . . . . ±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±50mA
Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +265oC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
(All Voltages Reference to VSS)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Supply Voltage Range . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Time at 4.5V VCC (TR, TF). . . . . . .10ns/V Max
Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Thermal Impedance θ
DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W
Flatpack. . . . . . . . . . . . . . . . . . . . . . . . . . 116oC/W 30oC/W
Maximum Package Power Dissipation at +125oC
DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7W
Flatpack. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4W
Maximum Device Power Dissipation. . . . . . . . . . . . . . . . . . .(TBD)W
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Gates
Input High Voltage. . . . . . . . . . . . . . . . . . . . . . . VCC to 70% of VCC
Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . .0V to 30% of VCC
JA
θ
JC
(NOTE 1)
PARAMETERS SYMBOL
Supply Current ICC VCC = 5.5V,
Output Current (Source)
Output Current (Sink)
Output Voltage High VOH VCC = 5.5V, VIH = 3.85V,
Output Voltage Low VOL VCC = 5.5V, VIH = 3.85V,
Input Leakage Current
IOH VCC = 4.5V, VIH = 4.5V,
IOL VCC = 4.5V, VIH = 4.5V,
IIN VCC = 5.5V, VIN = VCC or
CONDITIONS
VIN = VCC or GND
VOUT = VCC -0.4V, VIL = 0V, (Note 2)
VOUT = 0.4V, VIL = 0V, (Note 2)
VIL = 1.65V, IOH = -50µA
VCC = 4.5V, VIH = 3.15V, VIL = 1.35V, IOH = -50µA
VIL = 1.65V, IOL = 50µA
VCC = 4.5V, VIH = 3.15V, VIL = 1.35V, IOL = 50µA
GND
GROUP
A SUB-
GROUPS TEMPERATURE
1 +25oC-5µA
2, 3 +125oC, -55oC - 100 µA
1 +25oC -12 - mA
2, 3 +125oC, -55oC-8-mA
1 +25oC12-mA
2, 3 +125oC, -55oC8-mA
1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V
1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V
1, 2, 3 +25oC, +125oC, -55oC - 0.1 V
1, 2, 3 +25oC, +125oC, -55oC - 0.1 V
1 +25oC-±0.5 µA
2, 3 +125oC, -55oC-±1.0 µA
LIMITS
UNITSMIN MAX
Noise Immunity Functional Test
NOTES:
1. All voltages reference to device GND.
2. Force/measure functions may be interchanged.
3. For functional tests, VO 4.0V is recognized as a logic “1”, and VO 0.5V is recognized as a logic “0”.
FN VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, (Note 3)
7, 8A, 8B +25oC, +125oC, -55oC- - V
2
Spec Number 518813
Specifications ACS00MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
(NOTES 1, 2)
PARAMETER SYMBOL
Propagation Delay Input to Output
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns.
PARAMETER SYMBOL CONDITIONS NOTE TEMP
Capacitance Power Dissipation
Input Capacitance CIN VCC = 5.0V, VIH = 5.0V,
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TPHL TPLH
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
CPD VCC = 5.0V, VIH = 5.0V,
CONDITIONS
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VIL = 0V, f = 1MHz
VIL = 0V, f = 1MHz
A SUB-
GROUPS TEMPERATURE
9 +25oC 2 11 ns
10, 11 +125oC, -55oC 2 12 ns
1 +25oC - 22 - pF 1 +125oC - 24 - pF 1 +25oC--10pF 1 +125oC--10pF
LIMITS
UNITSMIN MAX
LIMITS
UNITSMIN TYP MAX
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
(NOTE 1)
PARAMETER SYMBOL
Supply Current ICC VCC = 5.5V, VIN = VCC or GND +25oC - 0.1 mA Output Current
(Source) Output Current (Sink) IOL VCC = VIH = 4.5V,
Output Voltage High VOH VCC = 5.5V, VIH = 3.85V,
Output Voltage Low VOL VCC = 5.5V, VIH = 3.85V,
Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND +25oC-±1 µA Noise Immunity
Functional Test Propagation Delay TPHL
NOTES:
1. All voltages referenced to device GND.
2. For functional tests, VO 4.0V is recognized as a logic “1”, and VO 0.5V is recognized as a logic “0”.
IOH VCC = VIH = 4.5V,
VOUT = VCC -0.4V, VIL = 0
VOUT = 0.4V, VIL = 0
VIL = 1.65V, IOH = -50µA VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOH = -50µA
VIL = 1.65V, IOL = 50µA VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOL = 50µA
FN VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V , (Note 2) VCC = 4.5V, VIH = 4.5V,
TPLH
VIL = 0V
CONDITIONS TEMPERATURE
+25oC -8.0 - mA
+25oC 8.0 - mA
+25oC VCC-0.1 - V
+25oC VCC-0.1 - V
+25oC - 0.1 V
+25oC - 0.1 V
+25oC--V
+25oC 2 12 ns
RAD LIMITS
UNITSMIN MAX
TABLE 5. DELTA PARAMETERS (+25oC)
(NOTE 1)
PARAMETER SYMBOL
Supply Current ICC ±1.0 µA Output Current IOL/IOH ±15 %
NOTE:
1. All delta calculations are referenced to 0 hour readings or pre-life readings.
DELTA LIMIT UNITS
3
Spec Number 518813
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