Intersil Corporation 2N7288R, 2N7288H Datasheet
SEMICONDUCTOR
REGISTRATION PENDING
Available as FRS244 (D, R, H)
November 1994
2N7288D, 2N7288R
2N7288H
Radiation Hardened
N-Channel Power MOSFETs
Features
• 9A, 250V, RDS(on) = 0.415Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
• Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
• Photo Current - 7.0nA Per-RAD(Si)/sec Typically
• Neutron - Pre-RAD Specifications for 1E13 Neutrons/cm
- Usable to 1E14 Neutrons/cm
• Single Event - Typically Survives 1E5ions/cm2Having an
LET ≤ 35MeV/mg/cm2and a Range ≥ 30µm at 80% BVDSS
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2
Description
The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types
with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.
Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron
hardness ranging from 1E13n/cm
uct. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. Heavy ion survival from signal event drain
burn-out exists for linear energy transfer (LET) of 35 at 80% of rated voltage.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
2
for 500V product to 1E14n/cm2 for 100V prod-
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Package
TO-257AA
Symbol
)
This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-
19500. Contact the Harris Semiconductor High-Reliability Marketing group for any
desired deviations from the data sheet.
Absolute Maximum Ratings (TC = +25
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 250 V
Drain-Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 250 V
Continuous Drain Current
TC = +25
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 27 A
Gate-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V
Maximum Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM 27 A
Continuous Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS 9 A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 27 A
Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG -55 to +150
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
Copyright
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© Harris Corporation 1992
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C) Unless Otherwise Specified
1
2N7288D, R, H UNITS
9
6
75
30
0.60
File Number
A
A
W
W
W/oC
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C
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C
3256.1
Specifications 2N7288D, 2N7288R, 2N7288H - Registration Pending
Pre-Radiation Electrical Specifications TC = +25
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C, Unless Otherwise Specified
LIMITS
PARAMETER SYMBOL TEST CONDITIONS
Drain-Source Breakdown Volts BVDSS VGS = 0, ID = 1mA 250 - V
Gate-Threshold Volts VGS(th) VDS = VGS, ID = 1mA 2.0 4.0 V
Gate-Body Leakage Forward IGSSF VGS = +20V - 100 nA
Gate-Body Leakage Reverse IGSSR VGS = -20V - 100 nA
Zero-Gate Voltage
Drain Current
IDSS1
IDSS2
IDSS3
VDS = 250V, VGS = 0
VDS = 200V, VGS = 0
VDS = 200V, VGS = 0, TC = +125
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C
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1
0.025
0.25
Rated Avalanche Current IAR Time = 20µs - 27 A
Drain-Source On-State Volts VDS(on) VGS = 10V, ID = 9A - 3.92 V
Drain-Source On Resistance RDS(on) VGS = 10V, ID = 6A - 0.415 Ω
Turn-On Delay Time td(on) VDD = 125V, ID = 9A - 46
Rise Time tr Pulse Width = 3µs - 100
Turn-Off Delay Time td(off) Period = 300µs, Rg = 25Ω - 368
UNITSMIN MAX
mA
ns
Fall Time tf 0 ≤ VGS ≤ 10 (See Test Circuit) - 124
Gate-Charge Threshold QG(th)
28
ncGate-Charge On State QG(on) 29 116
Gate-Charge Total QGM 55 220
VDD = 125V, ID = 9A
IGS1 = IGS2
Plateau Voltage VGP 2 10 V
0 ≤ VGS ≤ 20
Gate-Charge Source QGS 4 18
nc
Gate-Charge Drain QGD 12 48
Diode Forward Voltage VSD ID = 9A, VGD = 0 0.6 1.8 V
Reverse Recovery Time TT I = 9A; di/dt = 100A/µs - 840 ns
Junction-To-Case Rθjc - 1.67
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C/W
Junction-To-Ambient Rθja Free Air Operation - 60
VDD
RL
V1
Rg
E1 = 0.5 BVDSS VC = 0.75 BVDSS
VC
L
0.06Ω
VDS
DUT
IL
E1
FIGURE 1. SWITCHING TIME TESTING FIGURE 2. CLAMPED INDUCTIVE SWITCHING, ILM
2
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