Intersil Corporation 2N6796 Datasheet

2N6796

Data Sheet November 1998 File Number 1594.2

8A, 100V, 0.180 Ohm, N-Channel Power
MOSFET

The 2N6796 is an N-Channel enhancement mode silicon
gate power field effect transistor designed for applications
such as switching regulators, switching converters, motor
drivers, relay drivers, and drivers for high power bipolar
switching transistors requiring high speed and low gate drive
power. This type can be operated directly from integrated
circuits.

Ordering Information

PART NUMBER PACKAGE BRAND

2N6796 TO-205AF 2N6796

NOTE: When ordering, use the entire part number.

Features

• 8A, 100V

•r

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.180Ω

DS(ON)

Components to PC Boards”

Symbol

D

G

S

Packaging

JEDEC TO-205AF

DRAIN
(CASE)

SOURCE

GATE

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 321-724-7143

| Copyright © Intersil Corporation 1999

2N6796

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

2N6796 UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Continuous Drain Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulse Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Maximum Power Dissipation (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

DGR

D
D

DM

GS

S

SM

D

Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.20 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

100 V
100 V

8
5

A
A

32 A

±20 V

8A
32 A
25 W

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

DSSID

GS(TH)VGS

DSS

= 0.25mA, VGS = 0V 100 - - V

= VDS, ID = 0.5mA 2 - 4 V VDS = 100V, VGS = 0V - - 250 µA VDS = 80V, VGS = 0V, TC = 125oC - - 1000 µA

On-State Drain Current (Note 2) V
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

GSS

DS(ON)ID

= 8A, VGS = 10V - - 1.56 V

VGS = ±20V - - ±100 nA

= 5A, VGS = 10V - 0.14 0.180 Ω

ID = 5A, VGS = 10V, TC = 125oC - - 0.350 Ω

Diode Forward Voltage (Note 2) V
Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

OSS
RSS

TC = 25oC, IS = 8A, VGS = 0V 0.75 - 1.5 V

SD

VDS = 5V, ID = 5A 3 5.5 9 S

fs

VDD≅ 30V, ID = 5A, RG = 50Ω
(Figure 17) MOSFET Switching Times are

r

Essentially Independent of Operating
Temperature

f

VDS = 25V, VGS = 0V, f = 1MHz, (Figure 11) 350 600 900 pF

ISS

- - 30 ns

- - 75 ns

- - 40 ns

- - 45 ns

150 300 500 pF

50 100 150 pF

θJC

Free Air Operation - - 175

θJA

--5oC/W

o

C/W

Safe Operating Area SOA VDS = 80V, ID = 310mA 25 - - W

VDS = 3.12V, ID = 8A 25 - - W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Reverse Recovery Time t
Reverse Recovered Charge Q

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

2

TJ = 150oC, ISD = 8A, dISD/dt = 100A/µs - 300 - ns

rr

TJ = 150oC, ISD = 8A, dISD/dt = 100A/µs - 1.5 - µC

RR

2N6796

Typical Performance Curves Unless Otherwise Specified

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TC, CASE TEMPERATURE (oC)

125

FIGURE 1. NORMALIZED POWER DISSIPATION vsCASE

TEMPERATURE

1.0

0.5

0.2

0.1

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

0.05

0.02

0.01
SINGLE PULSE

-5

10

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

, DRAIN CURRENT (A)

D

I

FIGURE 2. MAXIMUM CONTINUOUSDRAINCURRENTvs

-2

10

10

8

6

4

2

0

25 75 125

50 100

TC, CASE TEMPERATURE (oC)

CASE TEMPERATURE

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z

-1

10

2

x R

θJC

θJC

1

+ T

150

C

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

100

OPERATION IN THIS AREA IS
LIMITED BY r

10

1

, DRAIN CURRENT (A)

D

I

= 25oC

T

C

TJ = MAX RATED
SINGLE PULSE

-0.1

DS(ON)

10µs
100µs

1ms

10ms
100ms

DC

10-1

VDS, DRAIN TO SOURCE VOLTAGE (V)

100

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

3

1000

35

30

25

20

15

10

, DRAIN CURRENT (A)

D

I

10V

5

0

010203040

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

PULSE DURATION = 80µs

9V

8V

7V

6V

5V

4V

FIGURE 5. OUTPUT CHARACTERISTICS

50