International Rrectifier ST3230C-R User Manual

查询ST3230C..R SERIES供应商
PHASE CONTROL THYRISTORS Hockey Puk Version
Bulletin I25200 rev. B 04/00
ST3230C..R SERIES
Features
Double side cooling
Fatigue free
Typical Applications
DC motor controls Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters ST3230C..R Units
I
T(AV)
I
T(AV)
I
T(RMS)
I
TSM
@ T
C
@ T
hs
@ T
hs
@ 50Hz 61200 A
@ 60Hz 64000 A
2785 A
80 °C
3360 A
55 °C
5970 A
25 °C
3360A
(R-PUK)
I2t@
V
DRM/VRRM
t
q
T
J
50Hz 18730 KA2s
60Hz 17000 KA2s
@
typical 500 µs
max. 125 °C
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1000 to 1800 V
1
ST3230C..R Series
Bulletin I25200 rev. B 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
DRM/VRRM
Type number Code peak and off-state voltage repetitive peak voltage
10 1000 1100
12 1200 1300
ST3230C..R 250
14 1400 1500
16 1600 1700
18 1800 1900
On-state Conduction
Parameter ST3230C..R Units Conditions
I
Max. average on-state current 2785 (1720) A
T(AV)
@ Case temperature 80 °C
Max. average on-state current 3360 (1360) A
I
T(AV)
@ Heatsink temperature 55 (85) °C
Max. RMS on-state current 5970 A DC @ 25°C heatsink temperature double side cooled
I
T(RMS)
I
Max. peak, one-cycle No voltage
TSM
non-repetitive surge current reapplied
2
t Maximum I2t for fusing No voltage Initial TC = 125°C
I
V
Max. value of threshold voltage 0.92 V TJ = TJ max.
T(TO)
r
Max. value of on-state slope
t
resistance
Max. on-state voltage 1.3 V Ipk= 2900A, TC = 25°C
V
TM
Typical latching current 300 mA TJ = 25°C, VD = 5V
I
L
, max. repetitive V
, maximum non- I
RSM
DRM/IRRM
@ TC = 125°C
VVmA
180° conduction, half sine wave
double side (single side [anode side]) cooled
A
KA2s
m
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
50% V
RRM
reapplied Sinusoidal half wave,
reapplied
50% V
RRM
reapplied
61200
64000
49000
51300
18730
17000
12000
10920
0.09 TJ = TJ max.
max.
Switching
Parameter ST3230C..R Units Conditions
di/dt Max. repetitive 50Hz (no repetitive) From 67% V
rate of rise of turned-on current to 1A, T
Maximum delay time 4.5
t
d
t
Typical turn-off time 500
q
150 (300) A/µs
µs
Gate drive 30V, 15Ω, Vd = 67% V
Rise time 0.5µs
I
= 1000A, tp = 1ms, TJ = TJ max, V
T
/dt = 2A/µs, V
dI
RR
2
to 1000A gate drive 10V, 5, tr = 0.5µs
DRM
= TJ max.
J
67% V
DR =
DRM, dvDR
= 25°C
DRM, TJ
= 50V,
RM
/dt = 8V/µs linear
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