International Rrectifier ST303S User Manual

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Bulletin I25173 rev. B 03/94

ST303S SERIES

INVERTER GRADE THYRISTORS

Features

All diffused design
Center amplifying gate
Guaranteed high dv/dt
Guaranteed high di/dt
High surge current capability
Low thermal impedance
High speed performance

Typical Applications

Inverters
Choppers
Induction heating
All types of force-commutated converters

Major Ratings and Characteristics

Parameters ST303S Units

I

T(AV)

I

T(RMS)

I

TSM

@ T

C

@ 50Hz 7950 A
@ 60Hz 8320 A

300 A

65 °C

471 A

Stud Version

300A

I2t@

V

DRM/VRRM

range (*) 10 to 30 µs

t

q

T

J

(*) tq = 10 to 20µs for 400 to 800V devices

t

= 15 to 30µs for 1000 to 1200V devices

q

50Hz 316 KA2s

@ 60Hz 288 KA

400 to 1200 V

- 40 to 125 °C

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2

s

case style

TO-209AE (TO-118)

1

ST303S Series

Bulletin I25173 rev. B 03/94

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage V

DRM/VRRM

Type number Code repetitive peak voltage non-repetitive peak voltage @ T

04 400 500

ST303S 50

08 800 900
10 1000 1100
12 1200 1300

Current Carrying Capability

, maximum V

, maximum I

RSM

DRM/IRRM

VVmA

max.

= TJ max.

J

I

Frequency Units

180

TM

o

el

180oel

I

TM

I

TM

100µs

50Hz 670 470 1050 940 5240 4300
400Hz 480 330 1021 7 1 0 1800 1270

1000Hz 230 14 0 760 470 730 430 A
2500Hz 35 - 150 - 90 -

Recovery voltage Vr 50 50 50 50 50 50
Voltage before turn-on Vd V

DRM

V

DRM

V

DRM

Rise of on-state current di/dt 50 50 - - - - A/µs
Case temperature 40 65 40 65 40 65 °C

Equivalent values for RC circuit 10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF

On-state Conduction

Parameter ST303S Units Conditions

I

Max. average on-state current 300 A 180° conduction, half sine wave

T(AV)

@ Case temperature 65 °C

I

Max. RMS on-state current 471 DC @ 45°C case temperature

T(RMS)

I

Max. peak, one half cycle, 7950 t = 10ms No voltage

TSM

non-repetitive surge current 8320 A t = 8.3ms reapplied

6690 t = 10ms 100% V
7000 t = 8.3ms reapplied Sinusoidal half wave,

2

t Maximum I2t for fusing 31 6 t = 10ms No voltage Initial TJ = TJ max

I

288 t = 8.3ms reapplied
224 t = 10ms 100% V

KA2s

204 t = 8.3ms reapplied

2

I

√t Maximum I2√t for fusing 3160 KA2√s t = 0.1 to 10ms, no voltage reapplied

RRM

RRM

V

2

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On-state Conduction

Parameter ST303S Units Conditions

V

Max. peak on-state voltage 2.16 ITM= 1255A, TJ = TJ max, tp = 10ms sine wave pulse

TM

Low level value of threshold

V

T(TO)1

voltage

V

High level value of threshold

T(TO)2

voltage
Low level value of forward

r

t1

slope resistance

r

High level value of forward

t2

slope resistance
Maximum holding current 600 TJ = 25°C, IT > 30A

I

H

Typical latching current 1000 TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A

I

L

1.44 (16.7% x π x I

V

1.46 (I > π x I

0.57 (16.7% x π x I
mΩ

0.56 (I > π x I

mA

Switching

Parameter ST303S Units Conditions

di/dt Max. non-repetitive rate of rise T

of turned-on current I

t

Typical delay time 0.80

d

1000 A/µs

Min Max

t

Max. turn-off time (*) 10 3 0

q

(*) t

= 10 to 20µs for 400 to 800V devices; tq = 15 to 30µs for 1000 to 1200V devices.

q

J

TM

T

J

Resistive load, Gate pulse: 10V, 5Ω source

µs

T

J

V

R

Blocking

Parameter ST303S Units Conditions

dv/dt Maximum critical rate of rise of T

off-state voltage available on request
Max. peak reverse and off-state

I

RRM

leakage current

I

DRM

500 V/µs

50 mA T

J

J

ST303S Series

Bulletin I25173 rev. B 03/94

< I < π x I

T(AV)

), TJ = TJ max.

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

T(AV)

= TJ max, V

= 2 x di/dt

= 25°C, V

= TJ max, I

= 50V, tp = 500µs, dv/dt: see table in device code

= rated V

DRM

= rated V

DM

= 550A, commutating di/dt = 40A/µs

TM

= TJ max, linear to 80% V

= TJ max, rated V

DRM/VRRM

T(AV)

T(AV)

DRM

DRM, ITM

DRM

applied

), TJ = TJ max.

), TJ = TJ max.

= 50A DC, tp= 1µs

, higher value

Triggering

Parameter ST303S Units Conditions

PGMMaximum peak gate power 60

Maximum average gate power 10

P

G(AV)

I

Max. peak positive gate current 10 A TJ = TJ max, tp ≤ 5ms

GM

+VGMMaximum peak positive

gate voltage
Maximum peak negative

-V

GM

gate voltage
Max. DC gate current required

I

GT

to trigger

V

Max. DC gate voltage required

GT

to trigger
Max. DC gate current not to trigger 20 mA

I

GD

V

Max. DC gate voltage not to trigger 0.25 V

GD

20

5

200 m A

3V

WTJ = TJ max, f = 50Hz, d% = 50

VTJ = TJ max, tp ≤ 5ms

T

TJ = TJ max, rated V

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= 25°C, VA = 12V, Ra = 6Ω

J

applied

DRM

3