查询ST303C..C SERIES供应商
INVERTER GRADE THYRISTORS Puk Version
Features
Metal case with ceramic insulator
International standard case TO-200AB (E-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
Bulletin I25172 rev. B 04/00
ST303C..C SERIES
620A
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters ST303C..C Units
I
T(AV)
@ T
hs
I
T(RMS)
@ T
hs
I
TSM
I2t@
V
DRM/VRRM
tq range (*) 10 to 30 µs
T
J
(*) tq = 10 to 20µs for 400 to 800V devices
t
= 15 to 30µs for 1000 to 1200V devices
q
@ 50Hz 7950 A
@ 60Hz 8320 A
50Hz 316 KA2s
@ 60Hz 289 KA
620 A
55 °C
1180 A
25 °C
400 to 1200 V
- 40 to 125 °C
case style TO-200AB (E-PUK)
2
s
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1
ST303C..C Series
Bulletin I25172 rev. B 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
DRM/VRRM
Type number Code repetitive peak voltage non-repetitive peak voltage @ T
04 400 500
ST303C..C 50
08 800 900
10 1000 1100
12 1200 1300
Current Carrying Capability
, maximum V
, maximum I
RSM
DRM/IRRM
VVmA
max.
= TJ max.
J
I
Frequency Units
180
TM
o
el
180oel
I
TM
I
TM
100µs
50Hz 1314 1130 2070 1940 6930 6270
400Hz 1260 1040 2190 1880 3440 2960
1000Hz 900 700 1900 1590 1850 1540 A
2500Hz 340 230 910 710 740 560
Recovery voltage Vr 50 50 50 50 50 50
Voltage before turn-on Vd V
DRM
V
DRM
V
DRM
Rise of on-state current di/dt 50 50 - - - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF
On-state Conduction
Parameter ST303C..C Units Conditions
Max. average on-state current 620 (230) A 180° conduction, half sine wave
I
T(AV)
@ Heatsink temperature 55 (85) °C double side (single side) cooled
Max. RMS on-state current 1180 DC @ 25°C heatsink temperature double side cooled
I
T(RMS)
I
Max. peak, one half cycle, 7950 t = 10ms No voltage
TSM
non-repetitive surge current 8320 A t = 8.3ms reapplied
6690 t = 10ms 100% V
7000 t = 8.3ms reapplied Sinusoidal half wave,
2
I
t Maximum I2t for fusing 316 t = 10ms No voltage Initial TJ = TJ max
289 t = 8.3ms reapplied
224 t = 10ms 100% V
KA2s
204 t = 8.3ms reapplied
2
√t Maximum I2√t for fusing 3160 KA2√s t = 0.1 to 10ms, no voltage reapplied
I
RRM
RRM
V
2
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ST303C..C Series
Bulletin I25172 rev. B 04/00
On-state Conduction
Parameter ST303C..C Units Conditions
V
Max. peak on-state voltage 2.16 ITM= 1255A, TJ = TJ max, tp = 10ms sine wave pulse
TM
Low level value of threshold
V
T(TO)1
voltage
High level value of threshold
V
T(TO)2
voltage
Low level value of forward
r
t1
slope resistance
High level value of forward
r
2
t
slope resistance
I
Maximum holding current 600 TJ = 25°C, IT > 30A
H
Typical latching current 1000 TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
I
L
Switching
Parameter ST303C..C Units Conditions
di/dt Max. non-repetitive rate of rise T
of turned-on current I
t
Typical delay time 0.83
d
t
Max. turn-off time (*) 10 30
q
(*) t
= 10 to 20µs for 400 to 800V devices; tq = 15 to 30µs for 1000 to 1200V devices.
q
Blocking
Parameter ST303C..C Units Conditions
dv/dt Maximum critical rate of rise of T
off-state voltage available on request
Max. peak reverse and off-state
I
RRM
leakage current
I
DRM
1.44 (16.7% x π x I
V
1.48 (I > π x I
0.57 (16.7% x π x I
mΩ
0.56 (I > π x I
mA
= TJ max, V
1000 A/µs
Min Max
500 V/µs
50 mA T
J
= 2 x di/dt
TM
= 25°C, V
T
J
Resistive load, Gate pulse: 10V, 5Ω source
µs
= TJ max, I
T
J
= 50V, tp = 500µs, dv/dt: see table in device code
V
R
= TJ max. linear to 80% V
J
= TJ max, rated V
J
< I < π x I
T(AV)
), TJ = TJ max.
T(AV)
< I < π x I
T(AV)
), TJ = TJ max.
T(AV)
DRM
= rated V
DM
= 550A, commutating di/dt = 40A/µs
TM
= rated V
DRM, ITM
DRM/VRRM
T(AV)
T(AV)
DRM
DRM
), TJ = TJ max.
), TJ = TJ max.
= 50A DC, tp= 1µs
, higher value
applied
Triggering
Parameter ST303C..C Units Conditions
PGMMaximum peak gate power 60
Maximum average gate power 10
P
G(AV)
I
Max. peak positive gate current 10 A TJ = TJ max, tp ≤ 5ms
GM
+VGMMaximum peak positive
gate voltage
Maximum peak negative
-V
GM
gate voltage
Max. DC gate current required
I
GT
to trigger
V
Max. DC gate voltage required
GT
to trigger
Max. DC gate current not to trigger 20 mA
I
GD
V
Max. DC gate voltage not to trigger 0.25 V
GD
20
5
200 mA
3V
WT
VTJ = TJ max, tp ≤ 5ms
T
T
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= TJ max, f = 50Hz, d% = 50
J
= 25°C, VA = 12V, Ra = 6Ω
J
= TJ max, rated V
J
DRM
applied
3
ST303C..C Series
Bulletin I25172 rev. B 04/00
Thermal and Mechanical Specification
Parameter ST303C..C Units Conditions
T
Max. operating temperature range -40 to 1 25
J
Max. storage temperature range -40 t o 1 50
T
stg
R
Max. thermal resistance, 0.09 DC operation single side cooled
thJ-hs
junction to heatsink 0.04 DC operation double side cooled
R
Max. thermal resistance, 0.020 DC operation single side cooled
thC-hs
case to heatsink 0.010 DC operation double side cooled
F Mounting force, ± 10% 9800 N
(1000) (Kg)
wt Approximate weight 83 g
Case style TO - 200AB (E-PUK) See Outline Table
∆R
Conduction
thJ-hs
(The following table shows the increment of thermal resistence R
Conduction angle Units Conditions
180° 0.010 0.010 0.007 0.007
120° 0.012 0.012 0.012 0.013
90° 0.015 0.015 0.016 0.017 K/W T
60° 0.022 0.022 0.023 0.023
30° 0.036 0.036 0.036 0.037
Sinusoidal conduction Rectangular conduction
Single Side Double Side Single Side Double Side
Ordering Information Table
°C
K/W
K/W
when devices operate at different conduction angles than DC)
thJ-hs
= TJ max.
J
Device Code
ST 30 3 C 12 C H K 1
2
1
34 7
1 - Thyristor
2 - Essential part number
3 - 3 = Fast turn off
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = V
(See Voltage Rating Table)
RRM
6 - C = Puk Case TO-200AB (E-PUK)
7 - Reapplied dv/dt code (for tq test condition)
8 -tq code
9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
- Critical dv/dt:
10
None = 500V/µsec (Standard value)
L = 1000V/µsec (Special selection)
4
6
5
9
8
dv/dt - tq combinations available
dv/dt (V/µs) 20 50 100 200 400
(µs) 10 CN DN EN FN * HN
t
q
up to 800V
(µs) 15 CL -- -- -- --
t
q
only for
1000/1200V
*Standard part number.
All other types available only on request.
12 CM DM EM F M HM
15 CL DL EL FL * HL
20 CK DK EK FK * HK
18 CP DP -- -- -20 CK DK EK FK * HK
25 CJ DJ EJ FJ * HJ
30 - - DH EH F H HH
10
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Outline Table
ANODE TO GATE
CREEPAGE DISTANCE: 11.18 (0.44) MIN.
STRIKE DISTANCE: 7.62 (0.30) MIN.
25.3 (0.99)
DIA. MAX.
25.3 (0.99)
DIA. MAX.
40.5 (1.59) DIA. MAX.
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
0.3 (0.01) MIN.
6.5 (0.26)
4.75 (0.19)
14.1 / 15.1
(0.56 / 0.59)
0.3 (0.01) MIN.
ST303C..C Series
Bulletin I25172 rev. B 04/00
42 (1.65) MAX.
130
120
110
ST303C..C Series
(Single S ide Co oled)
R (D C) = 0.09 K/W
thJ-h s
100
90
Conduction Angle
80
70
60
50
40
0 50 100 150 200 250 300 350 400
M aximum Allowa ble Heatsink Temperature (° C)
30°
60°
90°
Average O n-state Current (A)
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
120°
28 (1.10)
180°
25°± 5°
Case Style TO-200AB (E-PUK)
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
130
120
110
ST303C ..C Serie s
( S in g le Sid e C o o le d )
R (D C ) = 0.09 K /W
thJ-hs
100
90
80
70
60
50
30°
60°
40
30
20
0 100 200 300 400 500 600 700
Maxim um Allowable Heatsink Temperature (°C )
Conduction Period
90°
120°
180°
Average On-state Current (A)
DC
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5
ST303C..C Series
Bulletin I25172 rev. B 04/00
130
120
110
ST303C..C Series
(D ouble Side C o oled)
R (D C) = 0.04 K/W
thJ-h s
100
90
60°
90°
Cond uc tion Angle
120°
180°
80
70
60
50
40
30°
30
20
0 100 200 300 400 500 600 700 800
Maxim um Allowable Heatsink Temperature (° C)
Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics
2000
180°
1800
120°
1600
1400
1200
90°
60°
30°
RMS Lim it
1000
800
600
400
200
0
Maximum Average On-state Power Loss (W)
0 100 200 300 400 500 600 700 800
Conduction Angle
ST303C ..C Series
T = 125°C
J
A vera g e O n - state C urre n t (A)
Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics
130
120
110
ST303C ..C Serie s
(Double Side Cooled)
R (D C ) = 0.04 K /W
th J-hs
100
90
80
70
60
50
40
30°
60°
90°
120°
30
20
0 200 400 600 800 1000 1200
Maximum Allowable Heatsink Temperature (° C)
Average O n-state Current (A)
2800
DC
2400
2000
1600
1200
180°
120°
90°
60°
30°
RMS Lim it
800
400
0
Maximum Average On-state Power Loss (W)
0 200 400 600 800 1000 1200
ST303C ..C Series
T = 125°C
J
A ve ra g e O n -sta te Cu rre nt (A )
Conduction Period
180°
DC
Conduction Period
7500
At An y Rated Loa d C on dition A nd W ith
Rated V Applied Following Surge.
7000
6500
6000
RRM
In it i a l T = 1 25 °C
J
@ 60 H z 0.0083 s
@ 50 H z 0.0100 s
5500
5000
4500
4000
3500
ST303C..C Series
Peak Half Sine Wave On-state Current (A)
3000
110100
Number Of Equal Amplitude Half C ycle Current Pulses (N)
Fig. 7 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
6
8000
M a xim u m N on Rep e titive Su rg e C u rre nt
7500
7000
6500
6000
V er sus P u lse Tra in D uratio n . Con tro l
Of Conduction May Not Be Maintained.
In it ia l T = 1 2 5 ° C
N o V o lt a g e R e a p p l ie d
Ra te d V Re a p p lied
RRM
5500
5000
4500
4000
3500
Peak Half Sine W ave On-state Current (A)
ST303C..C Series
3000
0.01 0.1 1
P u ls e Tr a in D u r a t io n ( s )
Fig. 8 - Maximum Non-repetitive Surge Current
Single and Double Side Cooled
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J
ST303C..C Series
Bulletin I25172 rev. B 04/00
10000
0.1
ST303C ..C Serie s
thJ-h s
T = 25°C
1000
J
T = 125°C
J
0.01
Stea d y Sta te V alue
R = 0 .09 K/W
thJ-hs
(Single S ide Co oled)
R = 0 .04 K/W
th J-hs
Instan tane ous O n-state Curr ent (A)
ST303C..C Series
100
012345678
Instantaneous On-state Voltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
320
I = 5 0 0 A
300
280
260
240
TM
300 A
200 A
100 A
50 A
220
200
180
160
140
120
100
80
10 20 30 40 50 60 70 80 90 100
Maxim um Reverse Rec overy Charge - Qrr (µC)
Rate Of Fall Of On-state Current - di/dt (A/µs)
ST303C..C Series
T = 125 °C
J
0.001
T ran sien t The rm al Im pedan c e Z (K /W )
0.001 0.01 0.1 1 10
Squa re W a ve Pu lse D ura tio n (s)
Fig. 10 - Thermal Impedance Z
180
160
140
120
100
80
60
40
20
M ax im um Re ve rse R ec ove ry C u rren t - Irr (A )
10 20 30 40 50 60 70 80 90 100
R a te O f Fa ll O f Fo r w a rd C ur re n t - d i/ d t ( A /µ s)
(Dou ble Side Cooled)
(D C O pera tion)
thJ-hs
I = 5 00 A
TM
300 A
200 A
100 A
50 A
ST303 C..C Series
T = 1 25 ° C
J
Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics
1E4
100
200
400
500
1000
1500
1E3
2000
2500
3000
Peak O n-state Current (A)
1E2
1E1 1E2 1E3 1E4
ST30 3C ..C Series
Sin uso id a l p ulse
T = 4 0° C
tp
Sn u b b e r c i rc u it
R = 1 0 o h m s
s
C = 0.47 µF
s
V = 8 0 % V
D DRM
C
Pulse Ba sew id th (µ s)
Fig. 13 - Frequency Characteristics
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50 Hz
1000
1500
2000
2500
3000
1E11E21E31E4
1E1
1E4
500
tp
400
200
Snubber circuit
R = 1 0 oh m s
C = 0.4 7 µF
V = 80% V
ST30 3C ..C Ser ies
Sin uso id a l p ulse
T = 5 5° C
C
50 Hz
100
s
s
DRM
D
Pu lse Base w idth (µs)
7
ST303C..C Series
Bulletin I25172 rev. B 04/00
1E4
Snubber circuit
R = 10 o h m s
s
C = 0.4 7 µ F
s
V = 80% V
1E3
Pea k O n- sta te C urren t (A)
1E2
1E1 1E2 1E3 1E4
1E4
Snu b be r ci rcu it
R = 1 0 o h m s
C = 0.47 µF
V = 8 0% V
1E3
Peak On-state C urrent (A )
1E2
1E1 1E2 1E3 1E4
DRM
D
100
200
400
500
1000
1500
2000
2500
3000
ST 303 C ..C S e ries
Tra pe zo id al p uls e
T = 40 ° C
C
tp
di/dt = 50A/µs
Pulse Basew id th (µs)
Fig. 14 - Frequency Characteristics
s
s
DRM
D
100
200
400
500
1000
1500
2000
2500
3000
ST3 03C ..C Series
Trapezo idal pulse
T = 40°C
C
tp
d i/dt = 100A/µ s
Pulse Ba se w idth (µs)
Fig. 15 - Frequency Characteristics
Snubber circuit
R = 1 0 o hm s
s
C = 0 .47 µF
s
V = 8 0% V
D DRM
50 H z
400
500
1000
1500
2000
2500
3000
1E4
1E1 1E2 1E3 1E4
1E1
ST303 C. .C Series
Tr a p ez o id a l puls e
T = 5 5° C
tp
di/dt = 50A/µs
C
Pulse Basew idth (µs)
Snubber circuit
R = 1 0 o h m s
s
C = 0.47 µ F
s
V = 80% V
50 Hz
1E4
1E1 1E2 1E3 1E4
1E1
DRM
D
200
400
500
1000
1500
2000
2500
3000
ST30 3C ..C Ser ies
Trapezoidal pulse
T = 55°C
tp
di/dt = 100A/µs
C
Pulse B a sew idth (µs)
200
100
100
50 Hz
50 Hz
1E5
1E4
2
1E3
1E2
Peak On -state C urrent (A)
tp
1E1
1E1 1E2 1E3 1E4
1
0.5
0.4
ST3 03C ..C Series
Sinusoidal pulse
10
5
3
20 joules per pulse
Pulse Basew idth (µs)
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
8
ST30 3C. .C S eries
Re cta ngu lar pu lse
di/d t = 50A/µs
tp
2 0 j o ule s p e r p uls e
10
5
3
2
1
0.5
0.4
1E4
1E1
1E1 1 E2 1 E3 1E4
Pulse Ba sew idth (µ s)
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Bulletin I25172 rev. B 04/00
(A)
100
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
tr<=1 µs
10
(b)
Tj=-40 °C
Tj=25 °C
Tj=125 °C
1
Instantaneous Gate Voltage (V)
0.1
0.001 0.01 0.1 1 10 100
VG D
IGD
Device: ST303C..C Series Frequency Limited by PG(AV)
Instantaneous Gate Current
Fig. 17 - Gate Characteristics
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
(a)
(1)
ST303C..C Series
(2)
(3)
(4)
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