International Rrectifier ST303C-C User Manual

查询ST303C..C SERIES供应商

INVERTER GRADE THYRISTORS Puk Version

Features

Metal case with ceramic insulator
International standard case TO-200AB (E-PUK)

All diffused design
Center amplifying gate

Guaranteed high dV/dt
Guaranteed high dI/dt

High surge current capability
Low thermal impedance

High speed performance

Bulletin I25172 rev. B 04/00

ST303C..C SERIES

620A

Typical Applications

Inverters
Choppers

Induction heating
All types of force-commutated converters

Major Ratings and Characteristics

Parameters ST303C..C Units

I

T(AV)

@ T

hs

I

T(RMS)

@ T

hs

I

TSM

I2t@

V

DRM/VRRM

tq range (*) 10 to 30 µs

T

J

(*) tq = 10 to 20µs for 400 to 800V devices

t

= 15 to 30µs for 1000 to 1200V devices

q

@ 50Hz 7950 A

@ 60Hz 8320 A

50Hz 316 KA2s

@ 60Hz 289 KA

620 A

55 °C

1180 A

25 °C

400 to 1200 V

- 40 to 125 °C

case style TO-200AB (E-PUK)

2

s

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ST303C..C Series

Bulletin I25172 rev. B 04/00

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage V

DRM/VRRM

Type number Code repetitive peak voltage non-repetitive peak voltage @ T

04 400 500

ST303C..C 50

08 800 900

10 1000 1100

12 1200 1300

Current Carrying Capability

, maximum V

, maximum I

RSM

DRM/IRRM

VVmA

max.

= TJ max.

J

I

Frequency Units

180

TM

o

el

180oel

I

TM

I

TM

100µs

50Hz 1314 1130 2070 1940 6930 6270
400Hz 1260 1040 2190 1880 3440 2960

1000Hz 900 700 1900 1590 1850 1540 A

2500Hz 340 230 910 710 740 560

Recovery voltage Vr 50 50 50 50 50 50

Voltage before turn-on Vd V

DRM

V

DRM

V

DRM

Rise of on-state current di/dt 50 50 - - - - A/µs

Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF

On-state Conduction

Parameter ST303C..C Units Conditions

Max. average on-state current 620 (230) A 180° conduction, half sine wave

I

T(AV)

@ Heatsink temperature 55 (85) °C double side (single side) cooled

Max. RMS on-state current 1180 DC @ 25°C heatsink temperature double side cooled

I

T(RMS)

I

Max. peak, one half cycle, 7950 t = 10ms No voltage

TSM

non-repetitive surge current 8320 A t = 8.3ms reapplied

6690 t = 10ms 100% V

7000 t = 8.3ms reapplied Sinusoidal half wave,

2

I

t Maximum I2t for fusing 316 t = 10ms No voltage Initial TJ = TJ max

289 t = 8.3ms reapplied

224 t = 10ms 100% V

KA2s

204 t = 8.3ms reapplied

2

√t Maximum I2√t for fusing 3160 KA2√s t = 0.1 to 10ms, no voltage reapplied

I

RRM

RRM

V

2

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ST303C..C Series

Bulletin I25172 rev. B 04/00

On-state Conduction

Parameter ST303C..C Units Conditions

V

Max. peak on-state voltage 2.16 ITM= 1255A, TJ = TJ max, tp = 10ms sine wave pulse

TM

Low level value of threshold

V

T(TO)1

voltage

High level value of threshold

V

T(TO)2

voltage

Low level value of forward

r

t1

slope resistance

High level value of forward

r

2

t

slope resistance

I

Maximum holding current 600 TJ = 25°C, IT > 30A

H

Typical latching current 1000 TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A

I

L

Switching

Parameter ST303C..C Units Conditions

di/dt Max. non-repetitive rate of rise T

of turned-on current I

t

Typical delay time 0.83

d

t

Max. turn-off time (*) 10 30

q

(*) t

= 10 to 20µs for 400 to 800V devices; tq = 15 to 30µs for 1000 to 1200V devices.

q

Blocking

Parameter ST303C..C Units Conditions

dv/dt Maximum critical rate of rise of T

off-state voltage available on request

Max. peak reverse and off-state

I

RRM

leakage current

I

DRM

1.44 (16.7% x π x I

V

1.48 (I > π x I

0.57 (16.7% x π x I
mΩ

0.56 (I > π x I

mA

= TJ max, V

1000 A/µs

Min Max

500 V/µs

50 mA T

J

= 2 x di/dt

TM

= 25°C, V

T

J

Resistive load, Gate pulse: 10V, 5Ω source

µs

= TJ max, I

T

J

= 50V, tp = 500µs, dv/dt: see table in device code

V

R

= TJ max. linear to 80% V

J

= TJ max, rated V

J

< I < π x I

T(AV)

), TJ = TJ max.

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

T(AV)

DRM

= rated V

DM

= 550A, commutating di/dt = 40A/µs

TM

= rated V

DRM, ITM

DRM/VRRM

T(AV)

T(AV)

DRM

DRM

), TJ = TJ max.

), TJ = TJ max.

= 50A DC, tp= 1µs

, higher value

applied

Triggering

Parameter ST303C..C Units Conditions

PGMMaximum peak gate power 60

Maximum average gate power 10

P

G(AV)

I

Max. peak positive gate current 10 A TJ = TJ max, tp ≤ 5ms

GM

+VGMMaximum peak positive

gate voltage

Maximum peak negative

-V

GM

gate voltage

Max. DC gate current required

I

GT

to trigger

V

Max. DC gate voltage required

GT

to trigger

Max. DC gate current not to trigger 20 mA

I

GD

V

Max. DC gate voltage not to trigger 0.25 V

GD

20

5

200 mA

3V

WT

VTJ = TJ max, tp ≤ 5ms

T

T

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= TJ max, f = 50Hz, d% = 50

J

= 25°C, VA = 12V, Ra = 6Ω

J

= TJ max, rated V

J

DRM

applied

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