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DISCRETE POWER DIODES and THYRISTORS
DATA BOOK

Bulletin I2062/A
SD103N/R SERIES
FAST RECOVERY DIODES Stud Version
Features
High power FAST recovery diode series
1.0 to 2.0 µs recovery time
High voltage ratings up to 2500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Compression bonded encapsulation
Stud version JEDEC DO-30
Maximum junction temperature 125°C
110A
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
Major Ratings and Characteristics
Parameters SD103N/R Units
I
F(AV)
@ T
C
I
F(RMS)
I
FSM
2
I
t @ 50Hz 64 KA2s
@ 50Hz 3570 A
@ 60Hz 3730 A
@ 60Hz 58 KA
110 A
85 °C
173 A
2
s
V
range 400 to 2500 V
RRM
t
range 1.0 to 2.0 µs
rr
@ T
J
T
J
25 °C
- 40 to 125 °C
case style
DO-205AC (DO-30)

SD103N/R Series
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
max. repetitive V
RRM
, maximum non- I
RSM
Type number Code peak and off-state voltage repetitive peak voltage T
V V mA
04 400 500
SD103N/R..S10 08 800 900
10 1000 1100
12 1200 1300
SD103N/R..S15 14 1400 1500
16 1600 1700
20 2000 2100
SD103N/R..S20
25 2500 2600
Forward Conduction
Parameter SD103N/R Units Conditions
I
I
I
I
I
Max. average forward current 110 A 180° conduction, half sine wave.
F(AV)
@ Case temperature 85 °C
Max. RMS current 173 A DC @ 75°C case temperature
F(RMS)
Max. peak, one-cycle 3570 t = 10ms No voltage
FSM
non-repetitive forward current 3730 t = 8.3ms reapplied
3000 t = 10ms 100% V
A
RRM
3140 t = 8.3ms reapplied Sinusoidal half wave,
2
t Maximum I2t for fusing 64 t = 10ms No voltage Initial TJ = TJ max.
58 t = 8.3ms reapplied
KA2s
45 t = 10ms 100% V
RRM
41 t = 8.3ms reapplied
2
√t Maximum I2√t for fusing 636 KA2√s t = 0.1 to 10ms, no voltage reapplied
max.
RRM
= 125°C
J
35
12
V
V
r
r
V
Low level of threshold voltage 1.36 (16.7% x π x I
F(TO)1
High level of threshold voltage 1.94 (I > π x I
F(TO)
2
Low level of forward slope resistance 2.55 (16.7% x π x I
f1
High level of forward slope resistance 1.11 (I > π x I
f2
Max. forward voltage 2.23 V Ipk= 345A, TJ = 25°C, tp = 400 µs square pulse
FM
V
mΩ
Recovery Characteristics
Code
T
= 25 oC
J
typical t
@ 25% I
rr
RRM
Test conditions Max. values @ T
I
pk
Square Pulse @ 25% I
di/dt V
r
t
rr
RRM
(µs) (A) (A/µs) (V) (µs) (µC) (A)
S10
1.0 1.6 21 27
S15 1.5 350 25 -30 2.3 61 37
S20 2.0 3.2 75 39
= 125 °C
J
Q
rr
F(AV)
), TJ = TJ max.
F(AV)
F(AV)
), TJ = TJ max.
F(AV)
I
rr
< I < π x I
< I < π x I
), TJ = TJ max.
F(AV)
), TJ = TJ max.
F(AV)
2222222222222

SD103N/R Series
Fig. 5 - Maximum Non-repetitive Surge Current Fig. 6 - Maximum Non-repetitive Surge Current
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics

SD103N/R Series
Fig. 11 - Recovery Charge CharacteristicsFig. 10 - Recovery Time Characteristics Fig. 12 - Recovery Current Characteristics
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 9 - Typical Forward Recovery Characteristics
Fig. 8 - Thermal Impedance Z
Characteristic
thJC

SD103N/R Series
Fig. 19 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 13 - Recovery Time Characteristics
Fig. 16 - Recovery Time Characteristics Fig. 17 - Recovery Charge Characteristics Fig. 18 - Recovery Current Characteristics
Fig. 14 - Recovery Charge Characteristics Fig. 15 - Recovery Current Characteristics

Fig. 20 - Maximum Total Energy Loss Per Pulse Characteristics
SD103N/R Series
Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics

Thermal and Mechanical Specification
Parameter SD103N/R Units Conditions
Max. operating temperature range -40 to 125
T
J
T
Max. storage temperature range -40 to 150
stg
R
Max. thermal resistance, junction to case 0.16 DC operation
thJC
R
Max. thermal resistance, case to heatsink 0.10 Mounting surface, smooth, flat and greased
thCS
T Mounting torque ± 10% 15.5 Not lubricated threads
13.5 Lubricated threads
wt Approximate weight 120 g
Case style DO-205AC(DO-30) See Outline Table
°C
K/W
Nm
SD103N/R Series
∆R
(The following table shows the increment of thermal resistence R
Conduction
thJC
when devices operate at different conduction angles than DC)
thJC
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180° 0.011 0.012 T
120° 0.016 0.019
90° 0.021 0.023 K/W
60° 0.029 0.030
30° 0.041 0.041
= TJ max.
J
Ordering Information Table
Device Code
SD 10 3 R 25 S20 P B C
3
1 - Diode
2 - Essential part number
3 - 3 = Fast recovery
51 2
4
23
7
6
8 9
4 - N = Stud Normal Polarity (Cathode to Stud)
R = Stud Reverse Polarity (Anode to Stud)
5 6 - t
Voltage code: Code x 100 = V
code (see Recovery Characteristics table)
rr
(see Voltage Ratings table)
RRM
7 - P = Stud base DO-205AC (DO-30) 1/2" 20UNF-2A
M = Stud base DO-205AC (DO-30) M12 X 1.75
8 -7 B = Flag top terminals (for Cathode/ Anode Leads)
S = Isolated lead with silicone sleeve
(Red = Reverse Polarity; Blue = Normal Polarity)
None = Not isolated lead
9 - C = Ceramic housing (over 1600V)
V = Glass-metal seal (only up to 1600V)

SD103N/R Series
* FOR METRIC DEVICE: M12 X 1.75
157 (6 .18)
170 (6 .69)
157 (6.18)
55 (2.16) MIN.
* FOR METRIC DEVICE: M12 X 1.75
170 (6.69)
Outline Table
CERAMIC HOUSING
DIA. 8.5 (0.33) NOM.
DIA. 22.5 (0.88) MAX.
16.5 (0.65)
MAX.
C.S. 16mm
(0.015 s.i.)
SW 27
2.6 (0.10) MAX.
2
12
Conforms to JEDEC DO-205AC (DO-30)
1/2"-20UNF-2A*
GLASS-METAL SEAL
DIA. 8.5 (0.33) NOM.
All dimensions in millimeters (inches)
16.5 (0.65)
MAX.
C.S. 16mm
(0.015 s.i.)
2.6 (0.10) MAX.
2
2222222222222
DIA. 23.5 (0.93) MAX.
SW 27
1/2"-20UNF-2A*

Outline Table
2.4 (0.09)
27 (1.06)
41 (1.61) MA X.
9.5 (0.37)
M A X .
21 (0.8 2)
M A X .
29 (1.14)
M AX .
1 2.5 (0.4 9)
2.4 (0 .0 9)
27 (1.0 6)
40.5 (1 .59) M AX .
SD103N/R Series
CERAMIC HOUSING
DIA. 22.5 (0.88) MAX.
1/2"-20UNF-2A*
*FOR METRIC DEVICE. M12 X 1.75
16.5 (0.65)
5.6 (0.22)
DIA. 5.54 (0.22)
23
DO-205AC (DO-30) Flag
All dimensions in millimeters (inches)
GLASS-METAL SEAL
16.5 (0.65)
5.6 (0.22)
DIA. 5.54 (0.22)
DIA. 23.5 (0.93) MAX.
1/2"-20UNF-2A*
*FOR METRIC DEVICE. M12 X 1.75