International Rrectifier RST700CL User Manual
查询ST700C供应商
PHASE CONTROL THYRISTORS Hockey Puk Version
Bulletin I25190 rev. D 04/00
ST700C..L SERIES
Features
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
Typical Applications
DC motor control
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters ST700C..L Units
I
T(AV)
I
T(RMS)
I
TSM
@ T
hs
@ T
hs
@ 50Hz 15700 A
@ 60Hz 16400 A
910 A
55 °C
1857 A
25 °C
910A
case style TO-200AC (B-PUK)
I2t@
V
DRM/VRRM
t
q
T
J
50Hz 1232 KA2s
@ 60Hz 1125 KA
typical 150 µ s
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1200 to 2000 V
- 40 to 125 °C
2
s
1
ST700C..L Series
Bulletin I25190 rev. D 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
DRM/VRRM
Type number Code peak and off-state voltage repetitive peak voltage @ T
12 1200 1300
16 1600 1700
ST700C..L 18 1800 1900 80
20 2000 2100
On-state Conduction
Parameter ST700C..L Units Conditions
I
Max. average on-state current 910 (355) A 180° conduction, half sine wave
T(AV)
@ Heatsink temperature 55 (85) ° C double side (single side) cooled
Max. RMS on-state current 1857 DC @ 25°C heatsink temperature double side cooled
I
T(RMS)
I
Max. peak, one-cycle 15700 t = 10ms No voltage
TSM
non-repetitive surge current 16400 A t = 8.3ms reapplied
2
I
t Maximum I2t for fusing 1232 t = 10ms No voltage Initial TJ = TJ max.
2
I
√t Maximum I2√t for fusing 12321 KA2√s t = 0.1 to 10ms, no voltage reapplied
V
Low level value of threshold
T(TO)
1
voltage
High level value of threshold
V
T(TO)
2
voltage
Low level value of on-state
r
t1
slope resistance
High level value of on-state
r
t2
slope resistance
Max. on-state voltage 1.80 V Ipk= 2000A, TJ = TJ max, tp = 10ms sine pulse
V
TM
I
Maximum holding current 600
H
I
Typical latching current 1000
L
, max. repetitive V
, maximum non- I
RSM
DRM/IRRM
VVmA
13200 t = 10ms 100% V
13800 t = 8.3ms reapplied Sinusoidal half wave,
1125 t = 8.3ms reapplied
871 t = 10ms 100% V
KA2s
795 t = 8.3ms reapplied
1.00 (16.7% x π x I
V
1.13 (I > π x I
T(AV)
0.40 (16.7% x π x I
mΩ
0.35 (I > π x I
mA
T(AV)
= 25°C, anode supply 12V resistive load
T
J
RRM
RRM
< I < π x I
T(AV)
),TJ = TJ max.
< I < π x I
T(AV)
),TJ = TJ max.
), TJ = TJ max.
T(AV)
), TJ = TJ max.
T(AV)
max.
= TJ max
J
2
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ST700C..L Series
Bulletin I25190 rev. D 04/00
Switching
Parameter ST700C..L Units Conditions
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs
of turned-on current T
Typical delay time 1.0
t
d
Typical turn-off time 150
t
q
Blocking
Parameter ST700C..L Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
I
Max. peak reverse and off-state
DRM
leakage current
I
RRM
Triggering
Parameter ST700C..L Units Conditions
PGMMaximum peak gate power 10.0 TJ = TJ max, tp ≤ 5ms
P
Maximum average gate power 2.0 TJ = TJ max, f = 50Hz, d% = 50
G(AV)
I
Max. peak positive gate current 3.0 A TJ = TJ max, tp ≤ 5ms
GM
+V
Maximum peak positive
GM
gate voltage
Maximum peak negative
-V
GM
gate voltage
DC gate current required
I
GT
to trigger
V
DC gate voltage required
GT
to trigger
I
DC gate current not to trigger 10 m A
GD
VGDDC gate voltage not to trigger 0.25 V
1000 A/µs
= TJ max, anode voltage ≤ 80% V
J
Gate current 1A, d ig/dt = 1A/µs
= 0.67% V
V
d
µs
= 750A, TJ = TJ max, di/dt = 60A/µs, VR = 50V
I
TM
dv/dt
= 20V/µs, Gate 0V 100Ω, tp = 500µs
DRM, TJ
= 25°C
500 V/µsTJ = TJ max. linear to 80% rated V
80 mA TJ = TJ max, rated V
DRM/VRRM
W
20
V
= TJ max, tp ≤ 5ms
T
J
5.0
TYP. MAX.
200 -
100 200
50 -
2.5 -
1.8 3.0
1.1 -
T
= - 40°C
J
= 25°C
mA T
J
TJ = 125°C
TJ = - 40°C
VTJ = 25°C
T
= 125°C
J
Max. required gate trigger/ current/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
Max. gate current/voltage not to
= TJ max
T
J
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
DRM
DRM
applied
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