International Rrectifier IRFG110, JANTX2N7334, JANTXV2N7334 User Manual
查询IRFG110供应商
POWER MOSFET
THRU-HOLE (MO-036AB)
Product Summary
Part Number RDS(on) ID
IRFG110 0.7 Ω 1.0A
PD - 90396G
IRFG110
JANTX2N7334
JANTXV2N7334
REF:MIL-PRF-19500/597
100V, QUAD N-CHANNEL
HEXFET
®
MOSFET TECHNOLOGY
HEXFET
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature
stability . They are well-suited f or applications such as switching power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
®
MOSFET technology is the key to International
MO-036AB
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Dynamic dv/dt Rating
n Light-weight
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 1.0
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 0.6
I
DM
PD @ TC = 25°C Max. Power Dissipation 1.4 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt ➂ 5.5
T
J
T
STG
Pulsed Drain Current ➀ 4.0
Linear Derating Factor 0.011 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 75 mJ
Avalanche Current ➀ —A
Repetitive Avalanche Energy ➀ —mJ
Operating Junction -55 to 150
Storage Temperature Range
Lead Temperature 300 (0.63 in./1.6 mm from case for 10s)
Weight 1.3 (Typical) g
A
V/ns
o
C
For footnotes refer to the last page
www.irf.com 1
04/16/02
IRFG110
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
LS + L
C
iss
C
oss
C
rss
DSS
D
Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 1.0mA
/∆TJTemperature Coefficient of Breakdown — 0.13 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
Static Drain-to-Source On-State — — 0.7 VGS = 10V, ID = 0.6A
Resistance — — 0.8 VGS = 10V, ID = 1.0A
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 0.86 — — S ( )VDS > 15V, IDS = 0.6A ➃
Zero Gate Voltage Drain Current — — 25 VDS= 80V ,VGS=0V
— — 250 VDS = 80V,
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge — — 15 VGS =10V, ID = 1.0A
Gate-to-Source Charge — — 7.5 nC VDS = 50V
Gate-to-Drain (‘Miller’) Charge — — 7.5
Turn-On Delay Time — — 20 VDD = 50V, ID = 1.0A,
Rise Time — — 25 VGS =10V, RG = 7.5Ω
Turn-Off Delay Time — — 40
Fall Time — — 40
Total Inductance — 10 —
Input Capacitance — 180 — VGS = 0V, VDS = 25V
Output Capacitance — 82 — p F f = 1.0MHz
Reverse Transfer Capacitance — 15 —
Ω
Ω
µA
nA
ns
Measured from drain lead (6mm/
nH
0.25in. from package) to source
lead (6mm/0.25in. from package)
➃
VGS = 0V, TJ = 125°C
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units T est Conditions
I
Continuous Source Current (Body Diode) — — 1.0
S
I
Pulse Source Current (Body Diode) ➀ — — 4.0
SM
V
Diode Forward Voltage — — 1.5 V Tj = 25°C, IS = 1.0A, VGS = 0V ➃
SD
t
Reverse Recovery Time — — 200 nS Tj = 25°C, IF = 1.0A, di/dt ≤ 100A/µs
rr
Q
Reverse Recovery Charge — — 0.83 µC VDD ≤ 50V ➃
RR
t
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
on
A
S
Thermal Resistance
Parameter Min Typ Max Units T est Conditions
R
thJC
R
thJA
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2 www.irf.com
Junction-to-Case — — 17
Junction-to-Ambient — — 90 Typical socket mount
°C/W
+ LD.
IRFG110
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com 3
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