International Rrectifier IRHE7230, JANSR2N7262U User Manual
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RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-18)
Product Summary
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHE7230 100K Rads (Si) 0.35Ω 5.5A JANSR2N7262U
IRHE3230 300K Rads (Si) 0.35Ω 5.5A JANSF2N7262U
IRHE4230 600K Rads (Si) 0.35Ω 5.5A JANSG2N7262U
IRHE8230 1000K Rads (Si) 0.35Ω 5.5A JANSH2N7262U
International Rectifier’s RADHard HEXFET
ogy provides high performance power MOSFETs for
space applications. This technology has over a decade of proven performance and reliability in satellite
applications. These devices have been characterized for both T otal Dose and Single Ev ent Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of electrical parameters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 5.5
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 3.5
I
DM
PD @ TC = 25°C Max. Power Dissipation 25 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt ➂ 5.0
T
J
T
STG
PD - 90713E
IRHE7230
JANSR2N7262U
200V, N-CHANNEL
REF: MIL-PRF-19500/601
RAD-Hard
®
technol-
Parameter Units
Pulsed Drain Current ➀ 22
Linear Derating Factor 0.2 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 240 mJ
Avalanche Current ➀ —A
Repetitive Avalanche Energy ➀ —mJ
Operating Junction -55 to 150
Storage Temperature Range
Pckg. Mounting Surface Temp. 300 ( for 5s)
Weight 0.42 (Typical) g
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
™
HEXFET
®
MOSFET
TECHNOLOGY
LCC - 18
Pre-Irradiation
A
V/ns
o
C
For footnotes refer to the last page
www.irf.com 1
02/01/01
IRHE7230, JANSR2N7262U Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S + LD
C
iss
C
oss
C
rss
DSS
Drain-to-Source Breakdown Voltage 200 — — V VGS =0 V, ID = 1.0mA
/∆TJTemperature Coefficient of Breakdown — 0.25 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
Static Drain-to-Source — — 0.35 VGS = 12V, ID = 3.5A
On-State Resistance — — 0.36
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0mA
Forward Transconductance 2.5 — — S ( )VDS > 15V, IDS = 3.5A
Zero Gate Voltage Drain Current — — 2 5 VDS= 160V,VGS=0V
— — 250 VDS = 160V
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge — — 50 VGS = 12V, ID = 5.5A
Gate-to-Source Charge — — 10 n C VDS = 100V
Gate-to-Drain (‘Miller’) Charge — — 2 5
Turn-On Delay Time — — 2 5 VDD = 100V, ID = 5.5A,
Rise Time — — 40 VGS = 12V, RG = 7.5Ω
Turn-Off Delay Time — — 6 0
Fall Time — — 45
Total Inductance — 6.1 —
Input Capacitance — 1100 — VGS = 0V, VDS = 25V
Output Capacitance — 250 — pF f = 1.0MHz
Reverse Transfer Capacitance — 55 —
Ω
µA
nA
ns
nH
VGS = 12V, ID = 5.5A
Ω
VGS = 0V, TJ = 125°C
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units T est Conditions
I
Continuous Source Current (Body Diode) — — 5.5
S
I
Pulse Source Current (Body Diode) ➀ —— 22
SM
V
Diode Forward Voltage — — 1.4 V Tj = 25°C, IS = 5.5A, VGS = 0V ➃
SD
t
Reverse Recovery Time — — 400 nS Tj = 25°C, IF = 5.5A, di/dt ≥ 100A/µs
rr
Q
Reverse Recovery Charge — — 3.0 µC VDD ≤ 25V ➃
RR
t
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
on
A
S
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R
thJC
R
thJPCB
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2 www.irf.com
Junction-to-Case — — 5.0
Junction-to-PC Board — 1 9 — Solder to a copper clad PC Board
°C/W
+ LD.
Radiation Characteristics
Pre-Irradiation IRHE7230, JANSR2N7262U
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability .
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
T able 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter 100K Rads(Si)
BV
Drain-to-Source Breakdown Voltage 200 — 200
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
Gate Threshold Voltage 2.0 4.0 1.25 4.5 VGS = VDS, ID = 1.0mA
Gate-to-Source Leakage Forward — 100 — 100
Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20 V
Zero Gate Voltage Drain Current — 25 — 50 µA VDS=160V , V
Static Drain-to-Source ➃ — 0.35 — 0.48 Ω VGS = 12V, ID =3.5A
Min Max Min Max
1
600 to 1000K Rads (Si)
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source ➃ — 0.35 — 0.48 Ω VGS = 12V, ID =3.5A
On-State Resistance (LCC-18)
V
SD
1. Part number IRHE7230 (JANSR2N7262U)
2. Part numbers IRHE3230 (JANSF2N7262U), IRHE4230 (JANSG2N7262U) and IRHE8230 (JANSH2N7262U)
Diode Forward Voltage ➃ — 1.4 — 1.4 V VGS = 0V, IS = 5.5A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
—
2
Units
Test Conditions
VGS = 0V, ID = 1.0mA
V
nA
VGS = 20V
GS
=0V
Io n LE T Energy Range VDS(V)
MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Cu 28 285 43 190 180 170 125 —
Br 36.8 305 39 100 100 100 50 —
200
150
100
VDS
50
0
0 - 5 -10 -15 -20
VGS
Cu
Br
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com 3
IRHE7230, JANSR2N7262U Pre-Irradiation
Post-Irradiation
Fig 1. Typical Response of Gate Threshhold
Voltage Vs. Total Dose Exposure
Fig 3. Typical Response of Transconductance
Vs. Total Dose Exposure
Fig 2. Typical Response of On-State Resistance
Vs. Total Dose Exposure
Fig 4. Typical Response of Drain to Source
Breakdown Vs. Total Dose Exposure
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