International Rrectifier IRSF3011 User Manual

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Data Sheet No.PD 6.039B

FULLY PROTECTED POWER MOSFET SWITCH

IRSF3011

Features

· Extremely Rugged for Harsh Operating Environments

· Over-Temperature Protection

· Over-Current Protection

· Active Drain-to-Source Clamp

· ESD Protection

· Compatible with Standard Power MOSFET

· Low Operating Input Current

· Monolithic Construction

Description

The IRSF3011 is a three-terminal monolithic Smart Power MOSFET
with built-in short circuit, over-temperature, ESD and over-voltage pro­tections.

The on-chip protection circuit latches off the power MOSFET in case
the drain current exceeds 7A or the junction temperature exceeds 165°C
and keeps it off until the input is driven low. The drain-to-source voltage
is actively clamped at 55V (typical), prior to the avalanche of POWER
MOSFET, thus improving its performance during turn-off with inductive
loads.

The input current requirements are very low (300µA) which makes the
IRSF3011 compatible with most existing designs based on standard
power MOSFETs.

V

ds(clamp)

R

ds(on)

I

ds(sd)

T

j(sd)

E

AS

Applications

· Solenoid Driver

· DC Motor Driver

Available Packages

IRSF3011

(TO-220AB)

IRSF3011L

(SOT-223)

50V

200mΩ

5A

155°C

200mJ

IRSF3011 Block Diagram

IRSF3011

Absolute Maximum Ratings

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. (Tc = 25°C unless
otherwise specified.)

Minimum Maximum Units Test Conditions

V

ds, max

V

in, max

I

ds

P

d

E

AS

V

esd1

V

esd2

T

Jop

T

Stg

T

L

Static Electrical Characteristics

(Tc = 25°C unless otherwise specified.)

V

ds,clamp

R

ds(on)

I

dss

V

th

I

i,on

I

i, off

V

in, clamp

V

sd

Continuous Drain to Source Voltage  50

Continuous Input Voltage -0.3 10

Continuous Drain Current  self limited

Power Dissipation  30 W T

Unclamped Single Pulse Inductive Energy➁  200 mJ

Electrostatic Discharge Voltage (Human Body Model)  4000

Electrostatic Discharge Voltage (Machine Model)  1000 200pF, 0Ω

Operating Junction Temperature Range -55

Storage Temperature Range -55 175 °C

Lead Temperature (Soldering, 10 seconds)  300

self-limited

V

V

≤ 25°C

c

1000pF. 1.5kΩ

Minimum Typical Maximum Units Test Conditions

Drain to Source Clamp Voltage 50 54 

5662 Ids = 6A, tp = 700 µS

Drain to Source On Resistance  155 200 Vin = 5V, Ids = 2A

 200  mΩ V

 115  Vin = 10V, Ids = 2A

Drain to Source Leakage Current   10 Vds = 12V, Vin = 0V

  100 µA Vds = 50V, Vin = 0V

 10 250 Vds=40V,Vin=0V,Tc=150°C

Input Threshold Voltage 1.5 2.0 2.5 V V

Input Supply Current (Normal Operation)  0.25 0.6 Vin = 5V

 0.35 0.85

Input Supply Current (Protection Mode)  0.5 1.0 Vin = 5V

 0.6 1.2 Vin = 10V

Input Clamp Voltage 10 10.8 

Body-Drain Diode Forward Drop➂  1.2 1.5 I

V

mA

V

Ids = 10mA

= 4V, Ids = 2A

in

= 5V, Ids = 10mA

ds

Vin = 10V

Iin = 10mA

= -9A, R

ds

= 1kΩ

in

Thermal Characteristics

RΘ
RΘ
RΘ
RΘ

2

Junction to Case   4

jc

Junction to Ambient   62

jA

Junction to PCB   40

jc

Junction to PCB ➀ 60

jA

Minimum Typical Maximum Units Test Conditions

°C/W TO-220AB

°C/W SOT-223

IRSF3011

Switching ElectricalCharacteristics

(VCC = 14V, Resistive Load (RL) = 5Ω, TC= 25°C.) Please refer to Figure 15 for switching time definitions.

Minimum Typical Maximum Units Test Conditions

t

don

t

r

t

doff

t

f

Protection Characteristics

(TC= 25 °C unless otherwise specified.)

I

ds(sd)

T

j(sd)

V

protect

t

Iresp

t

Iblank

I

peak

V

reset

t

reset

t

Tresp

Turn-On Delay Time  160 250 Vin = 5V

90 Vin = 10V

Rise Time  650 1200 Vin = 5V

 250 

Turn-Off Delay Time  250 350 Vin = 5V

 300  Vin = 10V

Fall Time  180 350 Vin = 5V

 170  Vin = 10V

nS

Vin = 10V

Minimum Typical Maximum Units Test Conditions

Over-Current Shutdown Threshold 5 7 10 A Vin = 5V

Over Temperature Shutdown Threshold 155 165  °C Vin = 5V, Ids = 2A

Min. Input Voltage for Over-temp function  3  V

Over Current Response Time  4 

Over Current Blanking Time  4  See Figure 16 for definition

Peak Short Circuit Current  16  A See Figure 16 for definition

Protection Reset Voltage  1.3  V

Protection Reset Time  8 

Over-Temperature Response Time  12  See Figure 18 for definition

See Figure 16 for definition

µS

See Figure 17 for definition

µS

Temperature Coefficients of Electrical Characteristics

(Please see Figures 3 through 14 for more data on thermal characteristics of other electrical parameters.

Minimum Typical Maximum Units Test Conditions

V

ds,clamp

V

th

V

in,clamp

I

ds(sd)

Notes:

① When mounted on a 1" square PCB (FR-4 or G10 material). For recommended footprint and soldering techniques, refer
to International Rectifier Application Note AN-994.

② E
③ Input current must be limited to less than 5mA with a 1kΩ resistor in series with the input when the Body-Drain Diode

is forward biased.

Drain-to-Source Clamp Voltage T.C.  18.2  Ids = 10mA

Input Threshold Voltage T.C.  -2.7  mV/°C Vds = 5V, Ids = 10mA

Input Clamp Voltage T.C.  7.0  Iin = 10mA

Over-Current Shutdown Threshold T.C.  -9.8  mA/°C Vin = 5V

is tested with a constant current source of 6A applied for 700µS with Vin = 0V and starting Tj = 25°C.

AS

3

IRSF3011

I

)

R

)

Vin = 5V

Vin = 8V

Vin = 10V

I

s)

S

)

T = 25°C

T

)

R

)

Vin = 10V

Ids = 4A

Vin = 5V

T

)

S

)

Vin = 5V

250

T = 25°C

225

200

175

150

ds(on) (mOhm

125

100

12345678

Vin = 4V

ds (A

Figure 3 On Resistance vs.

Drain-to-Source Current

8

300

250

200

150

ds(on) (mOhm

100

50

-50 -25 0 25 50 75 100 125 150

emperature (°C

Figure 4 On Resistance vs. Temperature

9

7.5

7

hut Down Current (A

6.5

6

45678910

nput V o l tage ( Vo l t

Figure 5 Over-Current Shutdown Threshold vs.

Input Voltage

4

8

7

6

hut Down Current (A

5

4

-50 -25 0 25 50 75 100 125 150

emperature (°C

Figure 6 Over-Current Shutdown Threshold vs.

Temperature