International Rrectifier IRK.F82 User Manual
查询IRK.F82.. SERIES供应商查询IRK.F82.. SERIES供应商
Bulletin I27103 rev. A 09/97
IRK.F82.. SERIES
FAST THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
Fast turn-off thyristor
Fast recovery diode
High surge capability
Electrically isolated baseplate
3000 V
Industrial standard package
UL E78996 approved
isolating voltage
RMS
Description
These series of INT-A-pak modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and
others where fast switching characteristics are required.
Major Ratings and Characteristics
Parameters IRK.F82.. Units
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
I2t @ 50Hz 24.2 KA2s
2
I
t
q
t
rr
V
T
@ 50Hz 2200 A
@ 60Hz 2300 A
@ 60Hz 22.1 KA
√t 242 KA2√s
range 10 and 15 µs
/ V
DRM
RRM
range - 40 to 125
J
81 A
90 °C
180 A
2
s
2µs
up to 800 V
o
C
INT-A-pakä Power Modules
81 A
www.irf.com
1
IRK.F82.. Series
Bulletin I27103 rev. A 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
RRM/VDRM
Type number Code peak reverse voltage repetitive peak rev. voltage @ T
IRK.F82.. 30
04 400 400
08 800 800
Current Carrying Capacity
, maximum repetitive V
, maximum non- I
RSM
RRM/IDRM
VVmA
max.
= 125°C
J
I
Frequency f Units
180oel
TM
180oel
I
TM
100µs
I
TM
50Hz 160 265 250 400 2240 3100 A
400Hz 200 320 290 475 1070 1550 A
2500Hz 150 240 260 400 370 550 A
5000Hz 135 215 235 355 235 355 A
10000Hz 90 160 190 275 - - A
Recovery voltage Vr 50 50 50 50 50 50 V
Voltage before turn-on Vd 80% V
DRM
80% V
DRM
80% V
DRM
Rise of on-state current di/dt 50 50 - - - - A/µs
Case temperature 90 60 90 60 90 60 °C
Equivalent values for RC circuit 22 Ω / 0.15 µF 22 Ω / 0.15 µF 22 Ω / 0.15 µF
On-state Conduction
Parameter IRK.F82.. Units Conditions
Maximum average on-state current 81 A 180° conduction, half sine wave
I
T(AV)
@ Case temperature 90 °C
Maximum RMS current 180 A TC = 90°C, as AC switch
I
T(RMS)
I
Maximum peak, one-cycle, 2200 A t = 10ms No voltage
TSM
non-repetitive surge current 2300 t = 8.3ms reapplied
1850 t = 10ms 100% V
1950 t = 8.3ms reapplied Sinusoidal half wave,
2
t Maximum I2t for fusing 24.2 KA2s t = 10ms No voltage Initial TJ = 125°C
I
22.1 t = 8.3ms reapplied
17.1 t = 10ms 100% V
15.6 t = 8.3ms reapplied
2
√t Maximum I2√t for fusing 242 KA2√s t = 0 to 10ms, no voltage reapplied
I
Low level value of threshold voltage 1.20 V (16.7% x π x I
V
T(TO)1
High level value of threshold voltage 1.24 (I > π x I
V
T(TO)2
r
Low level value of on-state slope resistance 2.18 mW (16.7% x π x I
t1
r
High level value of on-state slope resistance 2.00 (I > π x I
t2
Maximum on-state voltage drop 1.96 V Ipk = 350A, TJ = TJ max., tp = 10ms sine pulse
V
TM
I
Maximum holding current 600 mA T
H
I
Typical latching current 1000 mA T
L
T(AV)
T(AV)
= 25°C, IT > 30 A
J
= 25°C, VA = 12V, Ra = 6Ω, Ig = 1A
J
2
RRM
RRM
< I < π x I
T(AV)
), TJ = TJ max.
< I < π x I
T(AV)
), TJ = TJ max.
), TJ = TJ max.
T(AV)
), TJ = TJ max.
T(AV)
www.irf.com
V
IRK.F82.. Series
Bulletin I27103 rev. A 09/97
Switching
Parameter IRK.F82.. Units Conditions
di/dt Maximum non-repetitive rate of rise 800 A/µs Gate drive 20V, 20Ω, tr ≤ 1m s, VD= 80% V
TJ = 25°C
Maximum recovery time 2 µ s ITM = 350A, di/dt = -25A/µs, V
t
rr
t
Maximum turn-off time N L ITM = 350A, TJ = 125°C, di/dt = -25A/µs,
q
10 15 µs V
Blocking
Parameter IRK.F82.. Units Conditions
dv/dt Maximum critical rate of rise of off-state 1000 V/µs T
voltage
RMS isolation voltage 3000 V 50 Hz, circuit to base, TJ = 25°C, t = 1 s
V
INS
Maximum peak reverse and off-state 30 mA TJ = 125°C, rated V
I
RRM
leakage current
I
DRM
Triggering
Parameter IRK.F82.. Units Conditions
P
Maximum peak gate power 40 W f = 50 Hz, d% = 50
GM
Maximum peak average gate power 2 W TJ = 125°C, f = 50Hz, d% = 50
P
G(AV)
Maximum peak positive gate current 5 A TJ = 125°C, tp < 5ms
I
GM
Maximum peak negative gate voltage 5 V
- V
GM
Max. DC gate current required to trigger 20 0 mA TJ = 25°C, Vak 12V, Ra = 6
I
GT
DC gate voltage required to trigger 3 V
V
GT
DC gate current not to trigger 20 m A TJ = 125°C, rated V
I
GD
DC gate voltage not to trigger 0.25 V
V
GD
= 50V, dv/dt = 400V/µs linear to 80% V
R
= 125°C., exponential to = 67% V
J
DRM/VRRM
applied
DRM
= 50V, TJ = 25°C
R
DRM
applied
DRM
DRM
Thermal and Mechanical Specifications
Parameter IRK.F82.. Units Conditions
TJMax. junction operating temperature range - 40 to 125 °C
T
Max. storage temperature range - 40 to 150
stg
R
Max. thermal resistance, junction to 0.25 K/W Per junction, DC operation
thJC
case
Max. thermal resistance, case to 0.035 K/W Mounting surface flat and greased
R
thC-hs
heatsink Per module
T Mounting torque ± 10% IAP to heatsink 4 - 6 (35 - 53) Nm
busbar to IAP 4 - 6 (35 - 53) (lb*in)
wt Approximate weight 500 (17.8) g (oz)
A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to allow
for the spread of the compound. Use of cable lugs is
not recommendd, busbars should be used and
restrained during tightening. Threads must be
lubricated with a compound
www.irf.com
3
Loading...