International Rrectifier IRK.71 User Manual
查询IRKT91-16供应商
Bulletin I27132 rev. I 09/04
IRK.71, .91 SERIES
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500V
isolating voltage
RMS
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage
of Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solid Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
ADD-A-pakTM GEN V Power Modules
Benefits
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al203 DBC insulator
Heatsink grounded
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
75 A
95 A
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
Major Ratings and Characteristics
Parameters IRK.71 IRK.91 Units
I
or I
T(AV)
F(AV)
@ 85°C
I
(*) 165 210 A
O(RMS)
I
@ 50Hz 1665 1785 A
TSM
I
@ 60Hz 1740 1870 A
FSM
I2t @ 50Hz 13.86 15.91 KA2s
@ 60Hz 12.56 14.52 KA2s
I2√t 138.6 159.1 KA2√s
V
range 400 to 1600 V
RRM
T
STG
T
J
(*) As AC switch.
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75 95 A
- 40 to 125
- 40 to125
o
C
o
C
1
IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
ELECTRICAL SPECIFICATIONS
Voltage Ratings
V
, maximum V
RRM
Type number
Voltage repetitive non-repetitive peak off-state voltage, I
Code peak reverse voltage peak reverse voltage gate open circuit 125°C
-V V VmA
04 400 500 400
06 600 700 600
08 800 900 800
IRK.71/ .91 10 1000 1100 1000 15
12 1200 1300 1200
14 1400 1500 1400
16 1600 1700 1600
On-state Conduction
Parameters IRK.71 IRK.91 Units Conditions
I
Max. average on-state
T(AV)
current (Thyristors) 180
I
Max. average forward T
F(AV)
current (Diodes)
Max. continuous RMS
I
O(RMS
)
on-state current. 165 210
As AC switch
Max. peak, one cycle 1665 1785 t=10ms No voltage
I
TSM
or non-repetitive on-state 1740 1870 t=8.3ms reapplied
I
or forward current 1400 1500 t=10ms 100% V
FSM
2
t Max. I2t for fusing 13.86 15.91 t=10ms No voltage
I
2
I
√t Max. I2√t for fusing (1) 138.6 159.1 KA2√s t=0.1 to 10ms, no voltage reapplied,TJ = TJ max
Max. value of threshold 0.82 0.80 Low level (3)
V
T(TO)
voltage (2) 0.85 0.85 High level (4)
rtMax. value of on-state 3.00 2.40 Low level (3)
slope resistance (2) 2.90 2.25 High level (4)
V
Max. peak on-state or I
TM
VFMforward voltage I
di/dt Max. non-repetitive rate TJ = 25oC, from 0.67 V
of rise of turned on 150 A/µs I
current t
I
Max. holding current 250 TJ = 25oC, anode supply = 6V,
H
I
Max. latching current 400 TJ = 25oC, anode supply = 6V, resistive load
L
(1) I2t for time t
(4) I > π x I
AV
= I2√t
x √tx(2) Average power = V
x
75 95
1470 1570 t=8.3ms reapplied
1850 2000 t=10ms T
1940 2100 t=8.3ms no voltage reapplied
12.56 14.52 t=8.3ms reapplied
9.80 11.25 t=10ms 100% V
8.96 10.27 t=8.3ms reapplied
17.11 20.00 t=10ms T
15.60 18.30 t= 8.3ms no voltage reapplied
1.59 1.58 V
x I
T(TO)
T(AV)
, maximum V
RSM
A
KA2s
V
mΩ
mA
+ r
x (I
t
T(RMS)
, max. repetitive I
DRM
o
conduction, half sine wave,
= 85oC
C
or
I
(RMS)
Sinusoidal
half wave,
RRM
Initial T
= 25oC,
J
Initial TJ = TJ max.
RRM
= 25oC,
J
T
= TJ max
J
= TJ max
T
J
= π x I
TM
T(AV)
= π x I
FM
F(AV)
=π x I
T(AV)
, I
TM
< 0.5 µs, tp > 6 µs
r
= 500mA,
g
T
DRM
= 25°C
J
,
resistive load, gate open circuit
2
)
(3) 16.7% x π x I
< I < π x I
AV
= TJ max.
J
AV
RRM
DRM
I
(RMS)
2
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IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
Triggering
Parameters IRK.71 IRK.91 Units Conditions
Max. peak gate power 12 12
P
GM
P
Max. average gate power 3.0 3.0
G(AV)
I
Max. peak gate current 3.0 3.0 A
GM
-V
Max. peak negative
GM
gate voltage
V
Max. gate voltage 4.0 TJ = - 40°C
GT
10
required to trigger 2.5 T
1.7 T
Max. gate current 270 TJ = - 40°C
I
GT
required to trigger 150 mA T
80 T
Max. gate voltage T
V
GD
that will not trigger rated V
Max. gate current T
I
GD
that will not trigger rated V
0.25 V
6mA
Blocking
Parameters IRK.71 IRK.91 Units Conditions
I
Max. peak reverse and
RRM
I
off-state leakage current
DRM
at V
, V
RRM
DRM
RMS isolation voltage V
V
INS
dv/dt Max. critical rate of rise T
of off-state voltage (5) gate open circuit
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT91/16AS90.
15 mA T
2500 (1 min) 50 Hz, circuit to base, all terminals
3500 (1 sec) shorted
500 V/µs
Thermal and Mechanical Specifications
Parameters IRK.71 IRK.91 Units Conditions
T
Junction operating
J
temperature range
T
Storage temp. range - 40 to 125
stg
Max. internal thermal
R
thJC
resistance, junction 0.165 0.135 Per module, DC operation
to case
R
Typical thermal resistance
thCS
case to heatsink
T Mounting torque ± 10%
to heatsink
busbar 3
wt Approximate weight 110 (4) gr (oz)
Case style TO-240AA JEDEC
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
Devices Units
180
Sine half wave conduction Rect. wave conduction
o
120
o
IRK.71 0.06 0.07 0.09 0.12 0.18 0.04 0.08 0.10 0.13 0.18
IRK.91 0.04 0.05 0.06 0.08 0.12 0.03 0.05 0.06 0.08 0.12
- 40 to 125
0.1
5
when devices operate at different conduction angles than DC)
thJC
o
90
o
60
o
30
W
V
°C
K/W
Nm
180o120
DRM
DRM
applied
applied
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
= 25°C
J
= 125°C
J
= 25°C
J
= 125°C
J
= 125oC,
J
= 125oC,
J
= 125 oC, gate open circuit
J
= 125oC, linear to 0.67 V
J
Mounting surface flat, smooth and greased
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
o
o
90
o
60
o
30
DRM
,
°C/W
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3
IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
Ordering Information Table
Device Code
IRK T 91 / 16 A S90
1
2 34
1 - Module type
2 - Circuit configuration (See Circuit Configuration table below)
3 - Current code * *
4 - Voltage code (See Voltage Ratings table)
5 - A : Gen V
6 - dv/dt code: S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
5
Outline Table
IRK.92 types
With no auxiliary cathode
6
* * Available with no auxiliary cathode.
To specify change: 71 to 72
91 to 92
e.g. : IRKT92/16A etc.
Dimensions are in millimeters and [inches]
IRKT IRKH IRKL
(4) (5)
(1)
~
+
(2)
-
(3)
K2 G2
K1G1
(7)
(6)
G1
(4) (5)
(1)
~
+
(2)
-
(3)
K1
NOTE: To order the Optional Hardware see Bulletin I27900
4
(1)
~
+
(2)
-
(3)
K2
(7)G2(6)
IRKN
G1
(4) (5)
(1)
-
+
(2)
+
(3)
K1
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