Datasheet IRHE7230, JANSR2N7262U Datasheet (International Rrectifier)

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RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-18)

Product Summary

Part Number Radiation Level RDS(on) ID QPL Part Number

IRHE7230 100K Rads (Si) 0.35Ω 5.5A JANSR2N7262U
IRHE3230 300K Rads (Si) 0.35Ω 5.5A JANSF2N7262U
IRHE4230 600K Rads (Si) 0.35Ω 5.5A JANSG2N7262U
IRHE8230 1000K Rads (Si) 0.35Ω 5.5A JANSH2N7262U

International Rectifier’s RADHard HEXFET
ogy provides high performance power MOSFETs for
space applications. This technology has over a de­cade of proven performance and reliability in satellite
applications. These devices have been character­ized for both T otal Dose and Single Ev ent Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec­trical parameters.

Absolute Maximum Ratings

ID @ VGS = 12V, TC = 25°C Continuous Drain Current 5.5

ID @ VGS = 12V, TC = 100°C Continuous Drain Current 3.5

I

DM

PD @ TC = 25°C Max. Power Dissipation 25 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt ➂ 5.0

T

J

T

STG

PD - 90713E

IRHE7230

JANSR2N7262U

200V, N-CHANNEL

REF: MIL-PRF-19500/601

RAD-Hard

®

technol-

Parameter Units

Pulsed Drain Current ➀ 22

Linear Derating Factor 0.2 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 240 mJ
Avalanche Current ➀ —A
Repetitive Avalanche Energy ➀ —mJ

Operating Junction -55 to 150
Storage Temperature Range
Pckg. Mounting Surface Temp. 300 ( for 5s)
Weight 0.42 (Typical) g

Features:

n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight

™

HEXFET

®

MOSFET

TECHNOLOGY

LCC - 18

Pre-Irradiation

A

V/ns

o

C

For footnotes refer to the last page

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02/01/01

IRHE7230, JANSR2N7262U Pre-Irradiation

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units Test Conditions

BV

DSS

∆BV

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

S + LD

C

iss

C

oss

C

rss

DSS

Drain-to-Source Breakdown Voltage 200 — — V VGS =0 V, ID = 1.0mA

/∆TJTemperature Coefficient of Breakdown — 0.25 — V/°C Reference to 25°C, ID = 1.0mA

Voltage
Static Drain-to-Source — — 0.35 VGS = 12V, ID = 3.5A
On-State Resistance — — 0.36
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0mA
Forward Transconductance 2.5 — — S ( )VDS > 15V, IDS = 3.5A 
Zero Gate Voltage Drain Current — — 2 5 VDS= 160V,VGS=0V

— — 250 VDS = 160V

Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge — — 50 VGS = 12V, ID = 5.5A
Gate-to-Source Charge — — 10 n C VDS = 100V
Gate-to-Drain (‘Miller’) Charge — — 2 5
Turn-On Delay Time — — 2 5 VDD = 100V, ID = 5.5A,
Rise Time — — 40 VGS = 12V, RG = 7.5Ω
Turn-Off Delay Time — — 6 0
Fall Time — — 45
Total Inductance — 6.1 —

Input Capacitance — 1100 — VGS = 0V, VDS = 25V
Output Capacitance — 250 — pF f = 1.0MHz
Reverse Transfer Capacitance — 55 —

Ω

µA

nA

ns

nH

VGS = 12V, ID = 5.5A

Ω

VGS = 0V, TJ = 125°C

Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)



Source-Drain Diode Ratings and Characteristics

Parameter Min Typ Max Units T est Conditions

I

Continuous Source Current (Body Diode) — — 5.5

S

I

Pulse Source Current (Body Diode) ➀ —— 22

SM

V

Diode Forward Voltage — — 1.4 V Tj = 25°C, IS = 5.5A, VGS = 0V ➃

SD

t

Reverse Recovery Time — — 400 nS Tj = 25°C, IF = 5.5A, di/dt ≥ 100A/µs

rr

Q

Reverse Recovery Charge — — 3.0 µC VDD ≤ 25V ➃

RR

t

Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L

on

A

S

Thermal Resistance

Parameter Min Typ Max Units Test Conditions

R

thJC

R

thJPCB

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

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Junction-to-Case — — 5.0
Junction-to-PC Board — 1 9 — Solder to a copper clad PC Board

°C/W

+ LD.

Radiation Characteristics

Pre-Irradiation IRHE7230, JANSR2N7262U

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability .
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.

T able 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅

Parameter 100K Rads(Si)

BV

Drain-to-Source Breakdown Voltage 200 — 200

DSS

V

GS(th)

I

GSS

I

GSS

I

DSS

R

DS(on)

Gate Threshold Voltage 2.0 4.0 1.25 4.5 VGS = VDS, ID = 1.0mA
Gate-to-Source Leakage Forward — 100 — 100
Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20 V
Zero Gate Voltage Drain Current — 25 — 50 µA VDS=160V , V
Static Drain-to-Source ➃ — 0.35 — 0.48 Ω VGS = 12V, ID =3.5A

Min Max Min Max

1

600 to 1000K Rads (Si)

On-State Resistance (TO-3)

R

DS(on)

Static Drain-to-Source ➃ — 0.35 — 0.48 Ω VGS = 12V, ID =3.5A
On-State Resistance (LCC-18)

V

SD

1. Part number IRHE7230 (JANSR2N7262U)

2. Part numbers IRHE3230 (JANSF2N7262U), IRHE4230 (JANSG2N7262U) and IRHE8230 (JANSH2N7262U)

Diode Forward Voltage ➃ — 1.4 — 1.4 V VGS = 0V, IS = 5.5A

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

—

2

Units

Test Conditions

VGS = 0V, ID = 1.0mA

V

nA

VGS = 20V

GS

=0V

Io n LE T Energy Range VDS(V)

MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Cu 28 285 43 190 180 170 125 —
Br 36.8 305 39 100 100 100 50 —

200

150

100

VDS

50

0

0 - 5 -10 -15 -20

VGS

Cu
Br

Fig a. Single Event Effect, Safe Operating Area

For footnotes refer to the last page

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IRHE7230, JANSR2N7262U Pre-Irradiation

Post-Irradiation

Fig 1. Typical Response of Gate Threshhold

Voltage Vs. Total Dose Exposure

Fig 3. Typical Response of Transconductance

Vs. Total Dose Exposure

Fig 2. Typical Response of On-State Resistance

Vs. Total Dose Exposure

Fig 4. Typical Response of Drain to Source

Breakdown Vs. Total Dose Exposure

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Post-Irradiation

Pre-Irradiation IRHE7230, JANSR2N7262U

Fig 5. Typical Zero Gate Voltage Drain

Current Vs. Total Dose Exposure

Fig 7. Typical Transient Response

of Rad Hard HEXFET During

1x1012 Rad (Si)/Sec Exposure

Fig 6. Typical On-State Resistance Vs.

Fig 8a. Gate Stress of V

Equals 12 Volts During

Radiation

Fig 8b. V

80% of B

Stress Equals

DSS

During Radiation

VDSS

Neutron Fluence Level

GSS

Fig 9. High Dose Rate

(Gamma Dot) Test Circuit

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IRHE7230, JANSR2N7262U Pre-Irradiation

Note: Bias Conditions during radiation: VGS = 12 Vdc, VDS = 0 Vdc

Post-IrradiationRadiation Characteristics

Fig 10. Typical Output Characteristics

Pre-Irradiation

Fig 12. Typical Output Characteristics

Post-Irradiation 300K Rads (Si)

Fig 11. Typical Output Characteristics

Post-Irradiation 100K Rads (Si)

Fig 13. Typical Output Characteristics

Post-Irradiation 1 Mega Rads (Si)

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Radiation Characteristics

Pre-Irradiation IRHE7230, JANSR2N7262U

GS

Note: Bias Conditions during radiation: V

= 0 V dc, VDS = 160 Vdc

Fig 14. Typical Output Characteristics

Pre-Irradiation

Fig 16. Typical Output Characteristics

Post-Irradiation 300K Rads (Si)

Fig 15. Typical Output Characteristics

Post-Irradiation 100K Rads (Si)

Fig 17. Typical Output Characteristics

Post-Irradiation 1 Mega Rads (Si)

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IRHE7230, JANSR2N7262U Pre-Irradiation

Fig 19. Typical Output CharacteristicsFig 18. Typical Output Characteristics

Fig 20. Typical Transfer Characteristics

Fig 21. Normalized On-Resistance

Vs. Temperature

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Pre-Irradiation IRHE7230, JANSR2N7262U

Fig 22. Typical Capacitance

Vs.

Fig 23. Typical Gate Charge Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

100

Fig 24. Typical Source-Drain Diode

Forward Voltage

OPERATION IN THIS AREA LIMITED



10

1

D

I , Drain Current (A)I , Drain Current (A)

°

= 25 C

C

T T= 150 C



Single Pulse

0.1
1 10 100 1000

°

J

V , Drain-to-Source Voltage (V)

DS

Fig 25. Maximum Safe Operating

BY R

Area

DS(on)

10us



100us



1ms



10ms



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IRHE7230, JANSR2N7262U Pre-Irradiation

R

D.U.T.

D

t

d(off)tf

+

V

DD

-

Fig 26. Maximum Drain Current Vs.

Case Temperature

V

DS

V

GS

R

G

V

GS

Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 27a. Switching Time Test Circuit

V

DS

90%

10%
V

GS

t

d(on)tr

Fig 27b. Switching Time Waveforms

10

D = 0.50

thJC

0.20

1

0.10

0.05

0.02

0.01

0.1

Thermal Response (Z )

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE



(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t



2. Peak T =P x Z + T

t , Rectangular Pulse Duration (sec)

1

J DM thJC C

P

DM

t

1



1 2

t

2

Fig 28. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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Pre-Irradiation IRHE7230, JANSR2N7262U

A

15V

DRIVER

+

-

R

V

G

V

20V

GS

DS

L

D.U.T

I

AS

0.01

t

p

Ω

Fig 29a. Unclamped Inductive Test Circuit

V

(BR )DS S

t

p

I

AS

Fig 29b. Unclamped Inductive Waveforms

Q

G

12 V

Q

GS

Q

GD

V

DD

Fig 29c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

D.U.T.

+

V

DS

-

V

V

G

Charge

Fig 30a. Basic Gate Charge Waveform

GS

3mA

I

G

Current Sampling Resistors

I

D

Fig 30b. Gate Charge Test Circuit

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IRHE7230, JANSR2N7262U Pre-Irradiation

Foot Notes:

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

➁ V

➂ I

= 25V, starting TJ = 25°C, L= 15.9mH

DD

Peak IL = 5.5A, VGS = 12V

≤ 5.5A, di/dt ≤ 120A/µs,

SD

VDD ≤ 200V, TJ ≤ 150°C

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with V

12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.

➅ Total Dose Irradiation with V

160 volt VDS applied and VGS = 0 during

irradiation per MlL-STD-750, method 1019, condition A.

DS

GS

Bias.

Bias.

Case Outline and Dimensions — LCC-18

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Data and specifications subject to change without notice. 02/01

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