International Rrectifier IRFD420 User Manual

查询IRFD420供应商

HEXFET® Power MOSFET

Dynamic dv/dt Rating
Repetitive Avalanche Rated
For Automatic Insertion
End Stackable
Fast Switching
Ease of paralleling
Simple Drive Requirements

Description

Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on­resistance and cost-effectiveness.

PD -9.1227

IRFD420

V

= 500V

DSS

R
ID = 0.37A

DS(on)

= 3.0Ω

The 4-pin DIP package is a low-cost machine-insertable case style which can be
stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain
serves as a thermal link to the mounting surface for power dissipation levels up to
1 watt.

HD-1

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10 V 0.37
ID @ TC = 100°C Continuous Drain Current, VGS @ 10 V 0.23 A
I

DM

PD @TC = 25°C Power Dissipation 1.0 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt 3.5 V/ns
T

J

T

STG

Pulsed Drain Current 3.0

Linear Derating Factor 0.0083 W/°C
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy 51 mJ
Avalanche Current 0.37 A
Repetitive Avalanche Energy 0.10 mJ

Operating Junction and -55 to + 150
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)

Thermal Resistance

A

Parameter Min. Typ. Max. Units

R

θJA

Junction-to-Ambient — — 120 °C/W

Revision 0

IRFD420

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 500 — — V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient — 0.59 — V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance — — 3.0 Ω VGS = 10.0V, ID = 0.22A
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 1.5 — — S VDS = 50V, ID = 1.3A
Drain-to-Source Leakage Current — — 25 VDS = 500V, VGS = 0V

— — 250 VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage — — 100 VGS = 20V
Gate-to-Source Reverse Leakage — — -100 VGS = -20V

µA

nA

Total Gate Charge — — 24 ID = 2.1A
Gate-to-Source Charge — — 3.3 nC VDS = 400V
Gate-to-Drain ("Miller") Charge — — 13 VGS = 10V
Turn-On Delay Time — 8.0 — VDD = 250V
Rise Time — 8.6 — ID = 2.1A
Turn-Off Delay Time — 33 — RG = 18Ω

ns

Fall Time — 16 — RD = 120Ω
Internal Drain Inductance — 4.0 — Between lead,

6mm (0.25in.)

Internal Source Inductance — 6.0 — from package

nH

and center of

die contact
Input Capacitance — 360 — VGS = 0V
Output Capacitance — 92 — pF VDS = 25V
Reverse Transfer Capacitance — 37 — ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Notes:

Repetitive rating; pulse width limited by

max. junction temperature.

V

DD

RG = 25Ω, I

Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.

— — 0.37

— — 5.0

Diode Forward Voltage — — 1.6 V TJ = 25°C, IS = 0.37A, VGS = 0V
Reverse Recovery Time — 260 520 ns TJ = 25°C, IF = 2.1A
Reverse RecoveryCharge — 0.70 1.4 µC di/dt = 100A/µs
Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

I

≤ 4.4A, di/dt ≤ 90A/µs, V

SD

TJ ≤ 150°C

= 50V, starting TJ = 25°C, L = 40mH

= 1.5A.

AS

Pulse width ≤ 300µs; duty cycle ≤ 2%.

A

DD

≤ V

(BR)DSS

,

IRFD420

R

DS(on)

, Drain-to-Source On Resistance

(Normalized)

I

D

, Drain Current (Amps)
I

D

, Drain Current (Amps)
I

D

, Drain Current (Amps)

Fig 1. Typical Output Characteristics,

TC = 25oC

Fig 2. Typical Output Characteristics,

TC = 150oC

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

IRFD420

Capacitance (pF)

V

GS

, Gate-to-Source Voltage (volts)
I

SD

, Reverse Drain Current (Amps)

I

D

, Drain Current (Amps)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 8. Maximum Safe Operating Area

IRFD420

I

D

, Drain Current (Amps)

Fig 10a. Switching Time Test Circuit

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 10b. Switching Time Waveforms

IRFD420

Fig 12a. Unclamped Inductive Test Circuit

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 13a. Basic Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

dv/dt Test Circuit

IRFD420

Peak Diode Recovery Test Circuit

IRFD420

Package Outline

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: [phone]

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: [phone] IR GERMANY:

Saalburgstrasse 157, 61350 Bad Homburg Tel: [phone] IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39)
1145 10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: [phone]

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: [phone]

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: [phone]

Data and specifications subject to change without notice.