International Rrectifier IRFB3077PbF User Manual
S
D
G
V
75V
R
typ.
2.8m
PD - 97047A
IRFB3077PbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Worldwide Best R
l Improved Gate, Avalanche and Dynamic dV/dt
DS(on)
in TO-220
max.
I
D
HEXFET® Power MOSFET
DSS
DS(on)
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
GDS
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Units
ID @ TC = 25°C
@ TC = 100°C Continuous Drain Current, VGS @ 10V
I
D
I
DM
PD @TC = 25°C
V
GS
dV/dt
T
J
T
STG
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation W
Linear Derating Factor
Gate-to-Source Voltage V
Peak Diode Recovery
Operating Junction and °C
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
d
f
@ 10V
GS
Max.
210
c
150
850
370
2.5
± 20
2.5
-55 to + 175
300
in (1.1Nxm)
10lb
x
c
:
3.3m
:
210A
D
G
TO-220AB
IRFB3077PbF
A
W/°C
V/ns
S
D
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
c
g
e
240
See Fig. 14, 15, 22a, 22b,
mJ
A
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat Greased Surface 0.50 ––– °C/W
Junction-to-Ambient
k
jk
––– 0.402
––– 62
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02/08/06
IRFB3077PbF
S
D
G
i
di/dt = 100A/µs
Static @ TJ = 25°C (unless o therwise spec ified)
Symbol Parameter Min. Typ. Max. Units
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Dynamic @ TJ = 25°C (unless o therwise spec ified)
Symbol Parameter Min. Typ. Max. Units
gfs Forward Transconductance 160 ––– ––– S
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
eff. (ER)
oss
C
eff. (TR)
oss
Drain-to-Source Breakdown Vol tage 75 ––– ––– V
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.091 ––– V/°C
J
Static Drain-to-Source On-Resistanc e ––– 2.8 3.3
Gate Threshold Voltage 2.0 ––– 4.0 V
Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
Gate Input Resistance ––– 1.2 ––– Ω f = 1MHz, open drain
Total Gate Charge ––– 160 220 nC
Gate-to-Source Charge ––– 37 –––
Gate-to-Drain ("Miller") Charge ––– 42 –––
Turn-On Delay Time ––– 25 ––– ns
Rise Time ––– 87 –––
Turn-Off Delay Time ––– 69 –––
Fall Time ––– 95 –––
Input Capacitance ––– 9400 ––– pF
Output Capacitance ––– 820 –––
Reverse Transfer Capacitance ––– 350 –––
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
––– 1090 –––
––– 1260 –––
h
VGS = 0V, ID = 250µA
Reference to 25°C, I
VGS = 10V, ID = 75A
mΩ
VDS = VGS, ID = 250µA
V
= 75V, VGS = 0V
DS
= 75V, VGS = 0V, TJ = 125°C
V
DS
= 20V
V
GS
= -20V
V
GS
VDS = 50V, ID = 75A
= 75A
I
D
V
= 38V
DS
= 10V
V
GS
VDD = 38V
= 75A
I
D
R
= 2.1Ω
G
VGS = 10V
VGS = 0V
= 50V
V
DS
ƒ = 1.0MHz
V
= 0V, VDS = 0V to 60V j, See Fig.11
GS
V
= 0V, VDS = 0V to 60V h, See Fig. 5
GS
Conditions
Conditions
g
g
= 5mA
D
g
d
Diode Characteristics
Symbol Parameter M in. Typ. Max . Units
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 75A
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
RG = 25Ω, I
above this value.
I
SD
Pulse width ≤ 400µs; duty cycle ≤ 2%.
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Continuous Source Current ––– –––
(Body Diode)
Pulsed Source Current ––– ––– 850
(Body Diode)
Diode Forward Voltage ––– ––– 1.3 V
Reverse Recovery Time ––– 42 63 ns
Reverse Recovery Charge ––– 59 89 nC
Reverse Recovery Current ––– 2.5 ––– A
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
, starting TJ = 25°C, L = 0.08mH
Jmax
= 75A, VGS =10V. Part not recommended for use
AS
≤ 75A, di/dt ≤ 400A/µs, V
di
≤ V
DD
(BR)DSS
, TJ ≤ 175°C.
Conditions
MOSFET symbol
210
––– 50 75
––– 86 130
C
eff. (TR) is a fixed capacitance that gives the same charging time
oss
as C
C
C
while V
oss
eff. (ER) is a fixed capacitance that gives the same energy as
oss
while V
oss
DS
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
R
is measured at TJ approximately 90°C
θ
A
c
showing the
integral reverse
p-n junction diode.
T
= 25°C, IS = 75A, VGS = 0V
J
T
= 25°C VR = 64V,
J
= 125°C IF = 75A
T
J
T
= 25°C
J
= 125°C
T
J
= 25°C
T
J
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
DSS
DSS
.
g
g
.
IRFB3077PbF
1000
)
A
(
t
n
e
r
r
u
C
e
c
r
u
100
o
S
-
o
t
-
n
i
a
r
D
,
D
I
4.5V
TOP 15V
BOTTOM 4.5V
60µs PULSE WIDTH
≤
Tj = 25°C
10
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
)
Α
(
t
n
e
r
r
100
u
C
e
c
r
u
o
S
-
o
t
-
n
i
a
r
D
,
D
I
TJ = 175°C
10
TJ = 25°C
V
= 25V
DS
≤ 60µs PULSE WIDTH
1
2.0 3.0 4.0 5.0 6.0 7.0 8.0
VGS, Gate-to-Source Voltage (V)
VGS
10V
8.0V
6.0V
5.5V
5.0V
4.8V
1000
)
A
(
t
n
e
r
r
u
C
e
c
r
u
o
S
-
o
t
-
n
i
a
r
D
,
D
I
TOP 15V
BOTTOM 4.5V
100
VGS
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
60µs PULSE WIDTH
≤
Tj = 175°C
10
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.5
e
c
n
a
t
s
i
s
e
R
n
O
e
c
r
u
o
S
-
o
t
-
n
i
a
r
D
,
)
n
o
(
S
D
R
ID = 75A
V
= 10V
GS
2.0
)
d
e
z
i
l
1.5
a
m
r
o
N
(
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
20
ID= 75A
)
V
(
16
e
g
a
t
l
o
V
e
12
c
r
u
o
S
-
o
t
8
-
e
t
a
G
,
S
4
G
V
0
0 40 80 120 160 200 240 280
VDS= 60V
VDS= 38V
VDS= 17V
Q
Total G ate Charge (nC)
G
)
F
p
(
e
c
n
a
t
i
c
a
p
a
C
,
C
Fig 3. Typical Transfer Characteristics
16000
12000
8000
4000
0
1 10 100
V
= 0V, f = 1 MHZ
GS
C
= C
C
C
iss
rss
oss
= C
= C
+ Cgd, C
gs
gd
+ C
ds
SHORTED
ds
gd
Ciss
Coss
Crss
VDS, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage
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