International Rrectifier IRF8721PbF User Manual

A

PD - 97119

IRF8721PbF

®

Power MOSFET

max

Qg

Applications

l Control MOSFET of Sync-Buck

V

DSS

HEXFET

R

DS(on)

Converters used for Notebook Processor

Power

l Control MOSFET for Isolated DC-DC

30V

8.5m

@VGS = 10V

:

8.3nC

Converters in Networking Systems

Benefits

l Very Low Gate Charge

l Low R

l Low Gate Impedance

l Fully Characterized Avalanche Voltage

DS(on)

at 4.5V V

GS

and Current

l 20V V

l Lead-Free

Max. Gate Rating

GS

S

1

2

3

4

Top View

A

8

D

7

D

6

D

5

DG

SO-8

Description

The IRF8721PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the

industry standard SO-8 package The IRF8721PbF has been optimized for parameters that are

critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduc-

tion and switching losses. The reduced total losses make this product ideal for high efficiency

DC-DC converters that power the latest generation of processors for Notebook and Netcom

applications.

Absolute Maximum Ratings

V

DS

V

GS

@ TA = 25°C

I

D

I

@ TA = 70°C

D

I

DM

PD @TA = 25°C

@TA = 70°C

P

D

T

J

T

STG

Parameter Units

Drain-to-Source Voltage V

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation W

Power Dissipation

Linear Derating Factor W/°C

Operating Junction and °C

Storage Temperature Range

c

@ 10V

GS

@ 10V

GS

Max.

30

± 20

14

11

110

2.5

1.6

0.02

-55 to + 150

A

Thermal Resistance

Parameter Typ. Max. Units

fg

g

––– 20 °C/W

––– 50

R

θ

JL

R

θ

JA

Junction-to-Drain Lead

Junction-to-Ambient

Notes  through  are on page 9

www.irf.com 1

07/30/07

IRF8721PbF

)

g

)

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

BV

DSS

ΔΒV

DSS

R

DS(on

V

GS(th

ΔV

GS(th

I

DSS

I

GSS

gfs Forward Transconductance 27 ––– ––– S

Q

s1

Q

s2

Q

d

Q

odr

Q

sw

Q

oss

R

G

t

d(on

t

r

t

d(off

t

f

C

iss

C

oss

C

rss

Drain-to-Source Breakdown Voltage 30 ––– ––– V

/ΔT

Breakdown Voltage Temp. Coeffi c ient ––– 0.021 ––– V/°C

J

Static Drain-to-Source On-Res istance ––– 6.9 8.5 mΩ

––– 10.6 12.5

Gate Threshold Voltage 1.35 ––– 2.35 V

VGS = 0V, I

Reference to 25°C, I

V

GS

V

GS

V

DS

Gate Threshold Voltage Coeffic i ent ––– -6.2 ––– mV/ °C

Drain-to-Source Leakage Current ––– ––– 1.0 μA

––– ––– 150

Gate-to-Source Forward Leakage ––– ––– 100 nA

Gate-to-Source Reverse Leakage ––– ––– -100

V

DS

V

DS

V

GS

V

GS

V

DS

Total Gate Charge ––– 8.3 12

Pre-Vth Gate-to-Source Charge ––– 2.0 –––

Post-Vth Gate-to-Sourc e Charge ––– 1.0 ––– nC

Gate-to-Drain Charge ––– 3.2 –––

V

DS

VGS = 4.5V

I

= 11A

D

Gate Charge Overdrive ––– 2.0 ––– See Fig. 16a and 16b

Switch Charge (Q

Output Charge ––– 5.0 ––– nC

Gate Resistance ––– 1.8

Turn-On Delay Time ––– 8.2 –––

Rise Time ––– 11 –––

Turn-Off Delay Time ––– 8.1 ––– ns

Fall Time ––– 7.0 –––

Input Capacitance ––– 1040 –––

Output Capacitance ––– 229 ––– pF

Reverse Transfer Capacitance ––– 114 –––

+ Q

) ––– 4. 2 –––

s2

d

3.0

V

Ω

V

I

R

See Fig. 15a

V

ƒ = 1.0MHz

DS

DD

= 11A

D

G

GS

DS

Avalanche Characteristics

Parameter Units

E

AS

I

AR

Single Pulse Avalanche E nergy

Avalanche Current

c

d

Typ.

–––

Diode Characteristics

Parameter Min. Typ. Max. Units

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current ––– ––– 3.1

(Body Diode) A

Pulsed Source Current ––– ––– 112

(Body Diode)

c

Diode Forward Voltage ––– ––– 1.0 V

Reverse Recovery Time ––– 14 21 ns

Reverse Recovery Charge ––– 15 23 nC

MOSFET symbol

showing the

integral reverse

p-n junction diode.

TJ = 25°C, IS = 11A, VGS = 0V

= 25°C, IF = 11A, VDD = 15V

T

J

di/dt = 300A/μs

Forward Turn-On Time I nt rins ic t urn-on time is negligible (turn-on is dominated by LS+LD)

2 www.irf.com

Conditions

= 250μA

D

= 1mA

D

= 10V, ID = 14A

= 4.5V, ID = 11A

= VGS, I

D

e

= 25μA

= 24V, VGS = 0V

= 24V, VGS = 0V, TJ = 125°C

= 20V

= -20V

= 15V, ID = 11A

= 15V

= 16V, VGS = 0V

= 15V, VGS = 4.5V

= 1.8Ω

= 0V

= 15V

Max.

68

11

Conditions

G

e

mJ

A

D

S

e

IRF8721PbF

1000

)

A

(

100

t

n

e

r

u

C

10

e

c

r

u

o

S

-

o

1

t

-

n

i

a

r

D

,

0.1

D

I

2.3V

0.01

0.1 1 10 100

≤

Tj = 25°C

TOP 10V

BOTTOM 2.3V

60μs PULSE WIDTH

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000

V

= 15V

)

A

(

t

n

e

r

u

C

e

c

r

u

o

S

-

o

t

-

n

i

a

r

D

,

D

I

0.01

DS

≤

60μs PULSE WIDTH

100

10

TJ = 150°C

1

0.1

1.0 2.0 3.0 4.0

TJ = 25°C

VGS, Gate-to-Source Voltage (V)

VGS

5.0V

4.5V

3.5V

3.0V

2.7V

2.5V

1000

)

A

(

t

n

e

r

100

u

C

e

c

r

u

o

S

-

o

t

-

n

10

i

a

r

D

,

D

I

2.3V

≤

60μs PULSE WIDTH

Tj = 150°C

1

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

2.0

e

c

n

a

t

s

i

s

e

R

n

O

e

c

r

u

o

S

-

o

t

-

n

i

a

r

D

,

)

n

o

(

S

D

R

ID = 14A

V

= 10V

GS

1.5

)

d

e

z

i

l

a

m

r

o

N

(

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

TOP 10V

BOTTOM 2.3V

VGS

5.0V

4.5V

3.5V

3.0V

2.7V

2.5V

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

www.irf.com 3