International Rrectifier IRF3808S, IRF3808L User Manual
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Typical Applications
● Integrated Starter Alternator
● 42 Volts Automotive Electrical Systems
Benefits
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
Description
Designed specifically for Automotive applications, this Advanced
Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per
silicon area. Additional features of this HEXFET power MOSFET
are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for
use in higher power Automotive electronic systems and a wide
variety of other applications.
AUTOMOTIVE MOSFET
G
PD - 94338A
IRF3808S
IRF3808L
HEXFET® Power MOSFET
D
V
= 75V
DSS
R
S
D2Pak
IRF3808S
= 0.007Ω
DS(on)
I
= 106AV
D
TO-262
IRF3808L
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 106V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 75V A
I
DM
PD @TC = 25°C Power Dissipation 200 W
V
GS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt S 5.5 V/ns
T
J
T
STG
Pulsed Drain Current Q 550
Linear Derating Factor 1.3 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche EnergyR 430 mJ
Avalanche CurrentQ 82 A
Repetitive Avalanche EnergyW See Fig.12a, 12b, 15, 16 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
Junction-to-Case ––– 0.75 °C/W
Junction-to-Ambient (PCB Mounted, Steady State)** ––– 40
HEXFET(R) is a registered trademark of International Rectifier.
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03/08/02
IRF3808S/IRF3808L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance U ––– 1140 ––– VGS = 0V, VDS = 0V to 60V
oss
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Q Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
R Starting T
RG = 25Ω, I
S I
SD
TJ ≤ 175°C
T Pulse width ≤ 400µs; duty cycle ≤ 2%.
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Drain-to-Source Breakdown Voltage 75 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.086 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– 5.9 7.0 mΩ VGS = 10V, ID = 82A T
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA
Forward Transconductance 100 ––– ––– SVDS = 25V, ID = 82A
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 250 VDS = 60V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 75V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge ––– 150 220 ID = 82A
Gate-to-Source Charge ––– 31 47 nC VDS = 60V
Gate-to-Drain ("Miller") Charge ––– 50 76 VGS = 10VT
Turn-On Delay Time ––– 16 ––– VDD = 38V
Rise Time ––– 140 ––– ID = 82A
Turn-Off Delay Time ––– 68 ––– RG = 2.5Ω
ns
Fall Time ––– 120 ––– VGS = 10V T
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 5310 ––– VGS = 0V
Output Capacitance ––– 890 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 130 ––– ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 6010 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 570 ––– VGS = 0V, VDS = 60V, ƒ = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) Q
––– –––
––– –––
106V
550
showing the
A
p-n junction diode.
Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 82A, VGS = 0VT
Reverse Recovery Time ––– 93 140 ns TJ = 25°C, IF = 82A
Reverse RecoveryCharge ––– 34 0 510 nC di/dt = 100A/µs
T
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
U C
eff. is a fixed capacitance that gives the same charging time
oss
as C
oss
while V
is rising from 0 to 80% V
DS
DSS
V Calculated continuous current based on maximum allowable
= 25°C, L = 0.130mH
J
= 82A. (See Figure 12).
AS
≤ 82A, di/dt ≤ 310A/µs, V
DD
≤ V
(BR)DSS
junction temperature. Package limitation current is 75A.
W Limited by T
,
avalanche performance.
, see Fig.12a, 12b, 15, 16 for typical repetitive
Jmax
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
G
G
.
D
S
D
S
IRF3808S/IRF3808L
)
1000
100
10
D
I , Drain-to-Source Current (A)
1
1000.00
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
T = 25 C
J
°
1000
100
10
D
I , Drain-to-Source Current (A)
1
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
V , Drain-to-Source Voltage (V
DS
4.5V
20µs PULSE WIDTH
T = 175 C
J
°
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
137A
I =
D
)
(Α
100.00
TJ = 175°C
TJ = 25°C
, Drain-to-Source Current
D
I
10.00
1.0 3.0 5.0 7.0 9.0 11.0 13.0 15.0
V
= 15V
DS
20µs PULSE WIDTH
2.5
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
V =
10V
GS
°
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRF3808S/IRF3808L
100000
10000
V
= 0V, f = 1 MHZ
GS
C
= C
iss
rss
oss
= C
= C
gs
gd
ds
C
C
+ Cgd, C
+ C
gd
Ciss
1000
C, Capacitance(pF)
Coss
Crss
100
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000.00
SHORTED
ds
12
D
I =
82A
10
8
6
4
GS
2
V , Gate-to-Source Voltage (V)
0
0 40 80 120 160
Q , Total Gate Charge (nC)
G
V = 60V
DS
V = 37V
DS
V = 15V
DS
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10000
OPERATION IN THIS AREA
100.00
10.00
TJ = 175°C
1000
100
LIMITED BY RDS(on)
100µsec
TJ = 25°C
, Reverse Drain Current (A)
1.00
SD
I
0.10
0.0 0.5 1.0 1.5 2.0
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
V
GS
= 0V
10
, Drain-to-Source Current (A)
Tc = 25°C
D
I
Tj = 175°C
Single Pulse
1
1 10 100 1000
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
1msec
10msec
Forward Voltage
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