International Rrectifier IRF2903Z User Manual

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PD - 96988A

AUTOMOTIVE MOSFET

IRF2903ZS

IRF2903ZL

IRF2903Z

Features

l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Absolute Maximum Ratings

Parameter Units

ID @ TC = 25°C

ID @ TC = 100°C

@ TC = 25°C

PD @TC = 25°C

AS (Thermally limited)

(Tested )

STG

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

c

@ 10V (Silicon Limited)

@ 10V (Package Limited)

TO-220AB

IRF2903Z

GDS

Gate Drain Source

Thermal Resistance

Parameter Typ. Max.

θJC

θCS

θJA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB Mount, steady state)

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HEXFET® Power MOSFET

D2Pak

IRF2903ZS

See Fig.12a, 12b, 15, 16

-55 to + 175

300 (1.6mm from case )

10 lbf

––– 0.51

0.50 –––

––– 62

––– 40

DS(on)

Max.

260

180

1020

290

2.0

± 20

290

820

in (1.1Nym)

= 30V

DSS

= 2.4mΩ

= 75A

IRF2903ZL

TO-262

W/°C

°C

Units

°C/W

8/26/05

IRF2903Z/S/L

(BR)

)

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

DSS

∆V

DSS

DS(on

GS(th

gfs Forward Transconductance 120 ––– ––– S I

DSS

GSS

Q Q

d(on

d(off

iss

oss

rss

oss

eff.

oss

Source-Drain Ratings and Characteristics

Drain-to-Source Breakdown Voltage 30 ––– ––– V

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C

Static Drain-to-Source On-Resistance ––– 1.9 2.4

mΩ

Gate Threshold Voltage 2.0 ––– 4.0 V

Drain-to-Source Leakage Current ––– ––– 20 µA

––– ––– 250 Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Total Gate Charge ––– 160 240 Gate-to-Source Charge ––– 51 ––– nC Gate-to-Drain ("Miller") Charge ––– 58 ––– Turn-On Delay Time ––– 24 ––– Rise Time ––– 100 ––– Turn-Off Delay Time ––– 48 ––– ns Fall Time ––– 37 ––– Internal Drain Inductance ––– 4.5 ––– Between lead,

nH 6mm (0.25in.)

Internal Source Inductance ––– 7.5 ––– from package

Input Capacitance ––– 6320 ––– Output Capacitance ––– 1980 ––– Reverse Transfer Capacitance ––– 1100 ––– pF Output Capacitance ––– 5930 ––– Output Capacitance ––– 2010 ––– Effective Output Capacitance ––– 3050 –––

Parameter Min. Typ. Max. Units

Continuous Source Current ––– ––– 75 (Body Diode) A Pulsed Source Current ––– ––– 1020 (Body Diode) Diode Forward Voltage ––– ––– 1.3 V Reverse Recovery Time ––– 34 51 ns Reverse Recovery Charge ––– 29 44 nC Forward Turn-On Time

c

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Conditions

VGS = 0V, ID = 250µA Reference to 25°C, I

= 10V, ID = 75A

= 1mA

VDS = VGS, ID = 150µA VDS = 10V, ID = 75A V

= 30V, VGS = 0V

= 30V, VGS = 0V, TJ = 125°C

= 20V

= -20V

= 75A

= 24V

VGS = 10V

VDD = 15V

= 75A

= 3.2 Ω

VGS = 10V

and center of die contact VGS = 0V

= 25V

ƒ = 1.0MHz

= 0V, VDS = 1.0V, ƒ = 1.0MHz

= 0V, VDS = 24V, ƒ = 1.0MHz

= 0V, VDS = 0V to 24V

Conditions

MOSFET symbol showing the integral reverse p-n junction diode.

= 25°C, IS = 75A, VGS = 0V

TJ = 25°C, IF = 75A, VDD = 15V di/dt = 100A/µs

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IRF2903Z/S/L

1000

) A

( t n e

100

u C e

r u o S

i a

r D

4.5V

TOP 15V

BOTTOM 4.5V

≤

60µs PULSE WIDTH

Tj = 25°C

0.1 1 10 100 1000

VDS, Drain-to-Source Voltage (V)

1000.0

)

(

t n e

r u

C e

r u o S

i a

r D

100.0

TJ = 175°C

10.0

1.0

0.1

2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

TJ = 25°C

= 25V

≤

60µs PULSE WIDTH

VGS, Gate-to-Source Voltage (V)

VGS

10V

8.0V

7.0V

6.0V

5.5V

5.0V

1000

) A

( t n e

r u

C e

r u

100

o S

i a

r D

4.5V

TOP 15V

BOTTOM 4.5V

≤

60µs PULSE WIDTH

Tj = 175°C

0.1 1 10 100 1000

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

240

) S

(

200

e c n a

t c

160

u d n o c s n

120

r T

r a

r o F , s

380µs PULSE WIDTH

0 20 40 60 80 100 120 140 160 180

ID, Drain-to-Source Current (A)

TJ = 175°C

= 10V

VGS

10V

8.0V

7.0V

6.0V

5.5V

5.0V

TJ = 25°C

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance

Vs. Drain Current

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IRF2903Z/S/L

) F p

( e

c n a

i c a p a

C ,

12000

10000

8000

6000

4000

2000

1 10 100

= 0V, f = 1 MHZ

= C

iss

rss

oss

= C

Ciss

Coss

Crss

+ Cgd, C

+ C

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000.0

) A

( t

100.0

n e

r u

C n

i a

r D e

r e v e

R ,

D S

TJ = 175°C

10.0

TJ = 25°C

1.0

0.1

0.0 0.4 0.8 1.2 1.6 2.0 2.4

VSD, Source-to-Drain Voltage (V)

SHORTED

) V

( e

g a

l o V

e c

r u o S

t a

G ,

ID= 75A

VDS= 24V

VDS= 15V

0 40 80 120 160 200 240

Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

= 0V

10000

) A

(

1000

t n e

r u

100

e c

r u o S

i a

r D

LIMITED BY PACKAGE

Tc = 25°C Tj = 175°C Single Pulse

0.1

0.1 1.0 10.0 100.0

OPERATION IN THIS AREA LIMITED BY RDS(on)

1msec

, Drain-toSource Voltage (V)

100µsec

10msec

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

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