International Rrectifier IRF2807S User Manual
查询IRF2807L供应商
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D
high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF2807L) is available for lowprofile applications.
Absolute Maximum Ratings
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 82
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 58 A
I
DM
PD @TC = 25°C Power Dissipation 230 W
V
GS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt 5.9 V/ns
T
J
T
STG
PD - 94170
IRF2807S
IRF2807L
HEXFET® Power MOSFET
D
G
S
2
Pak is suitable for
D2Pak
IRF2807S
Parameter Max. Units
Pulsed Drain Current 280
Linear Derating Factor 1.5 W/°C
Gate-to-Source Voltage ± 20 V
Avalanche Current 43 A
Repetitive Avalanche Energy 23 mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
V
DSS
R
DS(on)
ID = 82A
IRF2807L
= 75V
= 13mΩ
TO-262
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θJA
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Junction-to-Case ––– 0.65
Junction-to-Ambient (PCB mount)** ––– 40
°C/W
02/14/02
IRF2807S/IRF2807L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Drain-to-Source Breakdown Voltage 75 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.074 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– ––– 13 mΩ VGS = 10V, ID = 43A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 38 ––– ––– SVDS = 50V, ID = 43A
Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250 VDS = 60V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100
VDS = 75V, VGS = 0V
µA
= 20V
GS
nA
VGS = -20V
Total Gate Charge ––– ––– 160 ID = 43A
Gate-to-Source Charge ––– ––– 29 nC VDS = 60V
Gate-to-Drain ("Miller") Charge ––– ––– 55 VGS = 10V, See Fig. 6 and 13
Turn-On Delay Time ––– 13 ––– VDD = 38V
Rise Time ––– 64 ––– ID = 43A
Turn-Off Delay Time ––– 49 ––– RG = 2.5Ω
ns
Fall Time ––– 48 ––– VGS = 10V, See Fig. 10
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 3820 ––– VGS = 0V
Output Capacitance ––– 610 ––– VDS = 25V
Reverse Transfer Capacitance ––– 130 ––– pF ƒ = 1.0MHz, See Fig. 5
Single Pulse Avalanche Energy ––– 1280340 mJ I
= 50A, L = 370µH
AS
D
G
S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
82
280
showing the
A
p-n junction diode.
G
Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 43A, VGS = 0V
Reverse Recovery Time ––– 100 150 ns TJ = 25°C, IF = 43A
Reverse Recovery Charge ––– 410 610 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting T
RG = 25Ω, I
I
SD
= 25°C, L = 370µH
J
= 43A, VGS=10V (See Figure 12)
AS
≤ 43A, di/dt ≤ 300A/µs, V
DD
≤ V
(BR)DSS
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
,
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
= 175°C .
J
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application
note #AN-994
2 www.irf.com
D
S
IRF2807S/IRF2807L
1000
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
J
V , Drain-to-Source Voltage (V)
DS
°
1000
100
D
I , Drain-to-Source Current (A)
10
0.1 1 10 100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
4.5V
4.5V
20µs PULSE WIDTH
T = 175 C
V , Drain-to-Source Voltage (V)
DS
°
J
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
3.0
71A
I =
D
2.5
°
T = 25 C
J
°
T = 175 C
J
100
D
I , Drain-to-Source Current (A)
V = 25V
DS
10
4.0 5.0 6.0 7.0 8.0 9.0
V , Gate-to-Source Voltage (V)
GS
20µs PULSE WIDTH
Fig 3. Typical Transfer Characteristics
2.0
1.5
(Normalized)
1.0
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
10V
GS
°
Vs. Temperature
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