International Rrectifier IRF2805PbF User Manual
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查询IRF2805PBF供应商
PD - 95493
AUTOMOTIVE MOSFET
Typical Applications
l Climate Control, ABS, Electronic Braking,
Windshield Wipers
l Lead-Free
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
IRF2805PbF
HEXFET® Power MOSFET
V
= 55V
DSS
R
DS(on)
I
D
= 4.7mΩ
= 75A
Description
Specifically designed for Automotive applications, this HEXFET
MOSFET utilizes the latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of this design are
a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this
design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
®
Power
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon limited) 175
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig.9) 120 A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited) 75
I
DM
PD @TC = 25°C Power Dissipation 330 W
V
GS
E
AS
E
(6 sigma) Single Pulse Avalanche Energy Tested Value 1220
AS
I
AR
E
AR
T
J
T
STG
Pulsed Drain Current 700
Linear Derating Factor 2.2 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 450 mJ
Avalanche Current See Fig.12a, 12b, 15, 16 A
Repetitive Avalanche Energy mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 1.1 (10) N•m (lbf•in)
°C
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
R
θCS
R
θJA
Junction-to-Case ––– 0.45
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62
HEXFET(R) is a registered trademark of International Rectifier.
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IRF2805PbF
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
eff. Effective Output Capacitance ––– 1600 ––– VGS = 0V, VDS = 0V to 44V
oss
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
RG = 25Ω, I
I
SD
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.06 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance ––– 3.9 4.7 mΩ VGS = 10V, ID = 104A
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA
Forward Transconductance 91 ––– ––– S VDS = 25V, ID = 104A
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 250 VDS = 55V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200
VDS = 55V, VGS = 0V
µA
nA
VGS = -20V
Total Gate Charge –– – 150 230 ID = 104A
Gate-to-Source Charge ––– 38 57 nC VDS = 44V
Gate-to-Drain ("Miller") Charge ––– 52 78 VGS = 10V
Turn-On Delay Time ––– 14 ––– VDD = 28V
Rise Time ––– 120 ––– ID = 104A
Turn-Off Delay Time ––– 68 ––– RG = 2.5Ω
ns
Fall Time ––– 110 ––– VGS = 10V
4.5
Internal Drain Inductance
Internal Source Inductance ––– –––
––– –––
7.5
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
Input Capacitance ––– 5110 ––– VGS = 0V
Output Capacitance ––– 1190 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 210 ––– ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 6470 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 860 ––– VGS = 0V, VDS = 44V, ƒ = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode)
––– –––
––– –––
175
700
showing the
A
p-n junction diode.
Diode Forward Voltage –– – ––– 1.3 V TJ = 25°C, IS = 104A, VGS = 0V
Reverse Recovery Time ––– 80 120 ns TJ = 25°C, IF = 104A
Reverse Recovery Charge ––– 290 430 nC di/dt = 100A/µs
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
C
eff. is a fixed capacitance that gives the same charging time
oss
= 25°C, L = 0.08mH
J
= 104A. (See Figure 12).
AS
≤ 104A, di/dt ≤ 240A/µs, V
DD
≤ V
(BR)DSS
as C
Limited by T
avalanche performance.
This value determined from sample failure population. 100%
,
tested to this value in production.
oss
while V
is rising from 0 to 80% V
DS
, see Fig.12a, 12b, 15, 16 for typical repetitive
Jmax
DSS
G
.
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IRF2805PbF
0
1000
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100
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t
-
10
n
i
a
r
D
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VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.5V
20µs PULSE WIDTH
1
0.1 1 10 100
Tj = 25°C
VDS, Drain-to-Source Voltage (V )
1000
TJ = 25°C
)
A
(
t
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r
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u
C
e
c
r
100
u
o
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-
o
t
-
n
i
a
r
D
,
D
I
10
4.0 5.0 6.0 7.0 8.0 9.0 10. 0
V
= 25V
DS
20µs PULSE WIDTH
VGS, Gat e-to-Source Voltage (V)
TJ = 175°C
)
A
(
t
n
e
r
r
u
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e
c
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o
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-
o
t
-
n
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r
D
,
I
1000
100
D
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.5V
20µs PULSE WIDTH
10
0.1 1 10 100
Tj = 175°C
VDS, Drain-to-Source Voltage (V )
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
200
)
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(
160
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c
n
a
t
c
u
d
120
n
o
c
s
n
a
r
T
80
d
r
a
w
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F
40
,
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TJ = 175°C
TJ = 25°C
V
= 25V
DS
20µs PULSE WIDTH
0
0 40 80 120 160 20
ID, Drain-to-Source Current (A)
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. Drain Current
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