International Rrectifier IRF1902 User Manual
A
查询IRF1902供应商
l Ultra Low On-Resistance
l N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
PD - 94282A
IRF1902
HEXFET® Power MOSFET
V
DSS
R
DS(on)
max (m
20V 85@VGS = 4.5V 4.0A
170@VGS = 2.7V 3.2A
Ω)Ω)
Ω) I
Ω)Ω)
D
Description
These N-Channel HEXFET
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
power MOSFETs from
1
S
2
S
3
S
4
A
8
D
7
D
6
D
5
DG
and load management applications..
The SO-8 has been modified through a customized
Top V iew
SO-8
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Absolute Maximum Ratings
Parameter Max. Units
V
DS
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 4.2
ID @ TA= 70°C Continuous Drain Current, VGS @ 4.5V 3.4 A
I
DM
PD @TA = 25°C Power Dissipation 2.5
PD @TA = 70°C Power Dissipation 1.6
V
GS
T
J, TSTG
Drain- Source Voltage 20 V
Pulsed Drain Current 17
Linear Derating Factor 0.02 mW/°C
Gate-to-Source Voltage ± 12 V
Junction and Storage Temperature Range -55 to + 150 °C
W
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θJL
R
θJA
Junction-to-Drain Lead ––– 20
Junction-to-Ambient ––– 50 °C/W
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11/15/01
IRF1902
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
∆V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage 20 ––– ––– VVGS = 0V, ID = 250µA
/∆T
Breakdown Voltage Temp. Coefficient ––– 0.019 ––– V/°C Reference to 25°C, ID = 1mA
J
Static Drain-to-Source On-Resistance
––– ––– 85 VGS = 4.5V, ID = 4.0A
––– ––– 170 VGS = 2.7V, ID = 3.2A
mΩ
Gate Threshold Voltage 0.70 ––– ––– VVDS = VGS, ID = 250µA
Forward Transconductance 5.6 ––– ––– SVDS = 10V, ID = 4.0A
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage ––– ––– 100 V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V
––– ––– 1.0 VDS = 16V, VGS = 0V
––– ––– 25 VDS = 16V, VGS = 0V, TJ = 70°C
µA
nA
GS
= 12V
Total Gate Charge ––– 5.0 7.5 ID = 4.2A
Gate-to-Source Charge ––– 1.2 ––– nC VDS = 10V
Gate-to-Drain ("Miller") Charge ––– 1.8 ––– VGS = 4.5V
Turn-On Delay Time ––– 5.9 ––– VDD = 10V
Rise Time ––– 13 ––– ID = 1.0A
Turn-Off Delay Time ––– 23 ––– RG = 53Ω
ns
Fall Time ––– 19 ––– VGS = 4.5V
Input Capacitance ––– 310 ––– VGS = 0V
Output Capacitance ––– 130 ––– pF VDS = 15V
Reverse Transfer Capacitance ––– 55 ––– ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current MOSFET symbol
(Body Diode) showing the
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
–––
–––
–––
–––
4.2
17
A
G
Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 2.5A, VGS = 0V
Reverse Recovery Time ––– 38 57 ns TJ = 25°C, IF = 2.5A
Reverse Recovery Charge ––– 42 63 nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on 1 in square Cu board
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
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D
S
IRF1902
100
10
VGS
TOP 7.0V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.25V
2.25V
1
, Drain-to-Source Current (A)
D
I
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100.00
100
10
VGS
TOP 7.0V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.25V
2.25V
1
, Drain-to-Source Current (A)
D
I
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
4.2A
I =
D
)
(Α
1.5
TJ = 25°C
10.00
, Drain-to-Source Current
D
I
1.00
2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
TJ = 175°C
V
= 15V
DS
20µs PULSE WIDTH
1.0
(Normalized)
0.5
DS(on)
R , Drain-to-Source On Resistance
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T , Junction Temperature ( C)
J
Fig 4. Normalized On-Resistance
V =
4.5V
GS
°
Vs. Temperature
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