International Rrectifier IRF1503 User Manual

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PD-94526A

AUTOMOTIVE MOSFET

Typical Applications

● 14V Automotive Electrical Systems

● 14V Electronic Power Steering

HEXFET® Power MOSFET

D

IRF1503

V

= 30V

DSS

Features

● Advanced Process Technology

● Ultra Low On-Resistance

● 175°C Operating Temperature

● Fast Switching

● Repetitive Avalanche Allowed up to Tjmax

G

S

R

DS(on)

= 3.3mΩ

ID = 75A

Description

Specifically designed for Automotive applications, this
design of HEXFET
processing techniques to achieve extremely low on­resistance per silicon area. Additional features of this
HEXFET power MOSFET are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating. These combine to make this design an
extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.

®

Power MOSFETs utilizes the lastest

TO-220AB

Absolute Maximum Ratings

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon limited) 240
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig.9) 170 A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited) 75
I

DM

PD @TC = 25°C Power Dissipation 330 W

V

GS

E

AS

E

(tested) Single Pulse Avalanche Energy Tested Value 980

AS

I

AR

E

AR

T

J

T

STG

Pulsed Drain Current  960

Linear Derating Factor 2.2 W/°C
Gate-to-Source Voltage ± 20 V
Single Pulse Avalanche Energy 510 mJ

Avalanche Current See Fig.12a, 12b, 15, 16 A
Repetitive Avalanche Energy mJ
Operating Junction and -55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

R

θCS

R

θJA

Junction-to-Case ––– 0.45
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
Junction-to-Ambient ––– 62

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IRF1503

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

∆V

(BR)DSS

R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

C

oss

C

oss

C

eff. Effective Output Capacitance  ––– 3420 ––– VGS = 0V, VDS = 0V to 24V

oss

Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA

/∆T

Breakdown Voltage Temp. Coefficient ––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA

J

Static Drain-to-Source On-Resistance ––– 2.6 3.3 mΩ VGS = 10V, ID = 140A 
Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA
Forward Transconductance 75 ––– ––– S VDS = 25V, ID = 140A

Drain-to-Source Leakage Current

––– ––– 20

––– ––– 250 VDS = 30V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 V
Gate-to-Source Reverse Leakage ––– ––– -200

µA

nA

V

= 30V, VGS = 0V

DS

= 20V

GS

VGS = -20V
Total Gate Charge ––– 130 200 ID = 140A
Gate-to-Source Charge ––– 36 54 nC VDS = 24V
Gate-to-Drain ("Miller") Charge ––– 41 62 VGS = 10V
Turn-On Delay Time ––– 17 ––– VDD = 15V
Rise Time ––– 130 ––– ID = 140A
Turn-Off Delay Time ––– 59 ––– RG = 2.5Ω

ns

Fall Time ––– 48 ––– VGS = 10V 

5.0

Internal Drain Inductance

Internal Source Inductance ––– –––

––– –––

13

Between lead,

6mm (0.25in.)

nH

from package

and center of die contact
Input Capacitance ––– 5730 ––– VGS = 0V
Output Capacitance ––– 2250 ––– pF VDS = 25V
Reverse Transfer Capacitance ––– 290 ––– ƒ = 1.0MHz, See Fig. 5
Output Capacitance ––– 7580 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance ––– 2290 ––– VGS = 0V, VDS = 24V, ƒ = 1.0MHz

D

G

S

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions

I

S

I

SM

V

SD

t

rr

Q

rr

t

on

Continuous Source Current MOSFET symbol
(Body Diode)
Pulsed Source Current integral reverse
(Body Diode) 

––– –––

––– –––

240

960

showing the

A

p-n junction diode.

G

Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 140A, VGS = 0V 
Reverse Recovery Time ––– 71 110 ns TJ = 25°C, IF = 140A, VDD = 15V
Reverse RecoveryCharge ––– 110 170 nC di/dt = 100A/µs 
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. (See fig. 11).

 Starting T

RG = 25Ω, I

= 25°C, L = 0.049mH

J

= 140A. (See Figure 12).

AS

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

 C

eff. is a fixed capacitance that gives the same charging time

oss

as C
 Limited by T

oss

while V

is rising from 0 to 80% V

DS

, see Fig.12a, 12b, 15, 16 for typical repetitive

Jmax

DSS

.

avalanche performance.
 This value determined from sample failure population. 100%
tested to this value in production.

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D

S

IRF1503

1000

)
A

(
t
n
e

r

r

100

u
C
e

c

r

u
o

S

­o

t

-

10

n

i
a

r
D

,

D

I

VGS
TOP 15 V
10 V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTTOM 4.5V

4.5V

20µs PULSE WIDTH
Tj = 25° C

1

0. 1 1 10 100

VDS, Drain-to-Source Vol tage (V)

1000

TJ = 25°C

)

Α

(

t
n
e

r

r
u

C
e

c

r

100

u
o
S

­o

t

­n

i
a

r
D

,

D

I

10

4.0 5.0 6.0 7.0 8.0 9.0 10.0

V

= 25V

DS

20µs PULSE WIDTH

VGS, Gate-to-Source Voltage (V)

TJ = 175°C

1000

)
A

(
t
n
e

r

r
u

C
e

c

r

100

u
o

S

­o

t

­n

i
a

r
D

,

D

I

VGS
TOP 15 V
10V

8.0V

7.0V

6.0V

5.5V

5.0V
BOTTOM 4.5V

4.5V

20µs PULSE WIDTH

10

0. 1 1 10 100

Tj = 175°C

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

200

)
S

(

160

e
c
n
a

t
c
u
d

120

n
o
c
s
n
a

r
T

80

d

r
a

w

r
o
F

40

,
s

f
G

0

TJ = 175°C

TJ = 25°C

V

= 25V

DS

20µs PULSE WIDTH

0 40 80 120 160 200

ID, Drain-to-Source Current (A)

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance

Vs. Drain Current

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