International Rrectifier IR2175S User Manual

Data Sheet No. PD60208 Rev. E

IR2175(S) & (PbF)

LINEAR CURRENT SENSING IC

Features

• Floating channel up to +600V

• Monolithic integration

• Linear current feedback through shunt resistor

• Direct digital PWM output for easy interface

•

•

•

•

condition

•

•

QBS

Low I
Independent fast overcurrent trip signal
High common mode noise immunity
Input overvoltage protection for IGBT short circuit

Open Drain outputs
Also available LEAD-FREE

allows the boot strap power supply

Description

The IR2175 is a monolithic current sensing IC designed
for motor drive applications. It senses the motor phase
current through an external shunt resistor, converts from
analog to digital signal, and transfers the signal to the
low side. IR’s proprietary high voltage isolation tech­nology is implemented to enable the high bandwidth
signal processing. The output format is discrete PWM
to eliminate need for the A/D input interface for the
IR2175. The dedicated overcurrent trip (OC) signal fa­cilitates IGBT short circuit protection. The open-drain
outputs make easy for any interface from 3.3V to 15V. S

Product Summary

V

OFFSET

I

QBS

V

in

Gain temp.drift 20ppm/

f

o

Overcurrent trip 2µsec (typ)

signal delay

Overcurrent trip level +/-260mV (typ.)

600Vmax

2mA

+/-260mVmax

o

C (typ.)

130kHz (typ.)

Packages

8 Lead PDIP

IR2175

8 Lead SOIC

IR2175S

Block Diagram

15V

PWM Output

GND

VCC
PO

COM

OCOvercurrent

Up to 600V

V+
VS

IR2175

VB

To Motor Phase

(Refer to Lead Assignments for cor­rect pin configuration). This/These
diagram(s) show electrical connec­tions only. Please refer to our Appli­cation Notes and DesignTips for
proper circuit board layout.

IR2175

(S) & (PbF)

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions.

Symbol Definition Min. Max. Units

V

S

V

BS

V

CC

V

IN

V

PO

V

OC

dV/dt Allowable offset voltage slew rate — 50 V/ns

P

D

Rth

JA

T

J

T

S

T

L

Note 1: Capacitors are required between VB and Vs when bootstrap power is used. The external power supply,
when used, is required between VB and Vs pins.

High side offset voltage -0.3 600

High side floating supply voltage

Low side and logic fixed supply voltage -0.3 25

Maximum input voltage between V

Digital PWM output voltage COM -0.3 VCC +0.3

Overcurrent output voltage COM -0.3 VCC +0.3

Package power dissipation @ T

Thermal resistance, junction to ambient 8 lead SOIC — 200

Junction temperature — 150

Storage temperature -55 150

Lead temperature (soldering, 10 seconds) — 300

IN+ and VS

≤ +25°C 8 lead SOIC — .625

A

8 lead PDIP — 1.0

8 lead PDIP — 125

-0.3 25

-5 5

V

W

°C/W

°C

Recommended Operating Conditions

The output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recommended
conditions.

Symbol Definition Min. Max. Units

V

B

V

S

V

PO

V

OC

V

CC

V

IN

T

A

2

High side floating supply voltage VS +13.0 VS +20

High side floating supply offset voltage 0.3 600

Digital PWM output voltage COM VCC

Overcurrent output voltage COM VCC

Low side and logic fixed supply voltage 9.5 20

Input voltage between V

Ambient temperature -40 125

IN+

and V

S

-260 +260 mV

V

°C

www.irf.com

IR2175

(S) & (PbF)

DC Electrical Characteristics

V

= VBS = 15V, and T

CC

Symbol Definition Min. Typ. Max. Units Test Conditions

V

IN

V

OC+

V

OC-

V

OS

∆

V

OS

G Gain (duty cycle % per VIN) 155 160 165 %/V max gain error=5%

∆

∆

G

/

I

LK

I

QBS

I

QCC

LIN Linearity (duty cycle deviation from ideal linearity — 0.5 1 %

∆

V

LIN

I

OPO

I

OCC

Note 1: ±10mV offset represents ±1.5% duty cycle fluctuation

Note 2: Gain = (full range of duty cycle in %) / (full input voltage range).

Nominal input voltage range before saturation -260 — 260

V

IN+

Overcurrent trip positive input voltage —

Overcurrent trip negative input voltage — -260 —

Input offset voltage -10 0 10 VIN = 0V (Note 1)

∆

/

T

/

Input offset voltage temperature drift — 25 — µV/

A

T

Gain temperature drift — 20 — ppm/oC

A

Offset supply leakage current — — 50 µA V

Quiescent VBS supply current — 2 — VS = 0V

Quiescent VCC supply current — — 0.5

curve)

∆

Linearity temperature drift — .005 — %/oC

A

T

Digital PWM output sink current 20 — —

OC output sink current 10 — —

= 25o unless otherwise specified.

A

_

V

S

260

2——

1——

—

mV

mA

mA

o

C

(Note 2)

= VS = 600V

B

VO = 1V

VO = 0.1V

VO = 1V

VO = 0.1V

AC Electrical Characteristics

VCC = VBS = 15V, and T

Symbol Definition Min. Typ. Max. Units Test Conditions

Propagation delay characteristics

fo Carrier frequency output 100 130 180 kHz

∆

∆

f

/

Dmin Minimum duty — 9 — %

Dmax Maximum duty — 91 — % V

BW fo bandwidth — 15 — kHz

PHS Phase shift at 1kHz — -10 —

tdoc Propagation delay time of OC 1 2 —

twoc Low true pulse width of OC — 1.5 —

Temperature drift of carrier frequency — 500 — ppm/oC

A

T

www.irf.com

= 25o unless otherwise specified.

A

VIN = 0 & 5V

V

+ = 100mVpk -pk

IN

sine wave, gain=-3dB

o

VIN+ =100mVpk-pk

µsec

figure 1

VIN+=-260mV,

+=+260mV

IN

sine wave

3