International Rrectifier IR2136, IR21362, IR21363 User Manual

查询IR21363 (J&S)供应商

Preliminary Data Sheet No. PD60166-I

IR2136/IR21362/IR21363

Features

Floating channel designed for bootstrap operation

•

Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V (IR2136),

•

11.5 to 20V (IR21362) or 12 to 20V (IR21363)
Undervoltage lockout for all channels

•

Over-current shutdown turns off all six drivers

•

Independent 3 half-bridge drivers

•

Matched propagation delay for all channels

•

Lowside outputs out of phase with inputs. High

•

side outputs out of phase (IR2136/IR21363) or in
phase (IR21362) with inputs.
Cross-conduction prevention logic

•

3.3V logic compatible

•

Lower di/dt gate driver for better noise immunity

•

Externally programmable delay for automatic fault

•

clear

Description

The IR2136/IR21362/IR21363(J&S) are high votage, high
speed power MOSFET and IGBT drivers with three in­dependent high and low side referenced output
channels for 3-phase applications. Proprietary HVIC
technology enables ruggedized monolithic construc­tion. Logic inputs are compatible with CMOS or
LSTTL outputs, down to 3.3V logic. A current trip
function which terminates all six outputs can be de­rived from an external current sense resistor. An enable
function is available to terminate all six outputs simul­taneously. An open-drain FAULT signal is provided to
indicate that an overcurrent or undervoltage shutdown
has occurred. Overcurrent fault conditions are cleared

(

&

S

J

3-PHASE BRIDGE DRIVER

Product Summary

V

OFFSET

I

+/- 120 mA / 250 mA

O

V

OUT

10 - 20V or 12V - 20V

Deadtime (typ.) 200 nsec

t

(typ.) 400 nsec

on/off

Packages

28-Lead SOIC

44-Lead PLCC w/o 12 leads

automatically after a delay programmed externally via
an RC network connected to the RCIN input. The out­put drivers feature a high pulse current buffer stage
designed for minimum driver cross-conduction. Propa­gation delays are matched to simplify use in high
frequency applications. The floating channel can be used
to drive N-channel power MOSFETs or IGBTs in the
high side configuration which operates up to 600 volts.

600V max.

28-Lead PDIP

)

Typical Connection

HIN1,2,3 / HIN1,2,3

(Refer to Lead Assignments for
correct pin configuration). This/
These diagram(s) show electrical
connections only. Please refer to
our Application Notes and
DesignTips for proper circuit
board layout.

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VCC

LIN1,2,3

FAULT

EN

GND

VCC
HIN1,2,3 / HIN1,2,3
LIN1,2,3
FAULT
EN

RCIN
ITRIP
VSS COM

VB1,2,3

HO1,2,3

VS1,2,3

LO1,2,3

IR2136(2)(3)

up to 600V

TO

LOAD

IR2136/IR21362/IR21363

LIN

(J&S)

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board
mounted and still air conditions.

Symbol Definition Min. Max. Units

V

S

V

BS

V

HO

V

CC

V

SS

V

LO1,2,3

V

IN

V

FLT

dV/dt Allowable offset voltage slew rate — 50 V/ns

P

D

Rth

JA

T

J

T

S

T

L

High side offset voltage -0.3 600
High side floating supply voltage -0.3 25
High side floating output voltage V
Low side and logic fixed supply voltage -0.3 25
Logic ground V
Low side output voltage -0.3 VCC + 0.3
Input voltage

FAULT output voltage VSS - 0.3 V

Package power dissipation @ TA ≤ +25°C (28 lead PDIP) — 1.5

Thermal resistance, junction to ambient (28 lead PDIP) — 83

Junction temperature — 125
Storage temperature -55 150
Lead temperature (soldering, 10 seconds) — 300

,HIN(IR2136/IR21363),HIN (IR21362) ITRIP,, VSS - 0.3 (V

EN, RCIN V

(28 lead SOIC) — 1.6

(44leadPLCC) — 2.0

(28 lead SOIC) — 78

(44 lead PLCC) — 63

S1,2,3

CC

- 0.3 V

- 25 V

+ 0.3

B1,2,3

+ 0.3

CC

+ 15) or

SS

+ 0.3)

CC

which ever

is lower

+ 0.3

CC

V

W

°C/W

°C

Recommended Operating Conditions

The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recom­mended conditions. All voltage parameters are absolute referenced to COM. The VS offset rating is tested with all supplies
biased at 15V differential.

Symbol Definition Min. Max. Units

V

B1,2,3

V

S1,2,3

V

HO1,2,3

V

LO1,2,3

V

CC

V

SS

V

FLT

V

RCIN

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High side floating supply voltage IR2136 10 20

IR21362 11.5 20

IR21363 12 20
High side floating supply offset voltage Note 1 600
High side output voltage V
Low side output voltage 0 V
Low side and logic fixed supply voltage IR2136 10 20

IR21362 11.5 20

IR21363 12 20
Logic ground -5 5
FAULT output voltage V
RCIN input voltage V

S1,2,3

SS
SS

V

B1,2,3

V
V

CC

CC
CC

V

IR2136/IR21362/IR21363

LIN

(J&S)

Recommended Operating Conditions

The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recom­mended conditions. All voltage parameters are absolute referenced to COM. The VS offset rating is tested with all supplies
biased at 15V differential.

Symbol Definition Min. Max. Units

V

ITRIP

V

IN

T

A

Note 1: Logic operational for VS of COM -5 to COM +600V. Logic state held for VS of COM -5V to -COM -VBS. (Please
refer to the Design Tip DT97-3 for more details).
Note 2: All input pins and the ITRIP pin are internally clamped with a 5.2V zener diode.

ITRIP input voltage V
Logic input voltage
Ambient temperature -40 125

, HIN (IR2136), HIN(IR21362), EN V

SS
SS

+5

V

SS

+5

V

SS

V

o

C

Static Electrical Characteristics

V

BIAS (VCC

are applicable to all six channels (H
and are applicable to the respective output leads: H

Symbol Definition Min. Typ. Max. Units Test Conditions

V

EN,TH+

V

V
V

V

RCIN,TH+

V

RCIN,HYS

V
V

V
V

V

CCUVHVCC

V

V

IN, CLAMP Input clamp voltage (HIN, LIN, ITRIP and EN)

, VBS1,2,3) = 15V unless otherwise specified. The VIN, VTH and IIN parameters are referenced to VSS and

V

V

EN,TH-

IT,TH+

IT,HYS

V

OH

V

OL
CCUV+VCC
BSUV+

CCUV­BSUV-

BSUVH

I

LK

I

QBS

I

QCC

I

LIN+

Logic “0” input voltage LIN1,2,3, HIN1,2,3 3 — —

IH

Logic “1” input voltage HIN1,2,3
Logic “1” input voltage LIN1,2,3, HIN1,2,3 — — 0.8

IL

Logic “0” input voltage HIN1,2,3
EN positive going threshold — — 3
EN negative going threshold 0.8 — —
ITRIP positive going threshold 370 460 550
ITRIPinput hysteresis — 70 —
RCIN positive going threshold — 8 —
RCIN input hysteresis — 3 —
High level output voltage, V
Low level output voltage, V

and VBS supply undervoltage IR2136 8.0 8.9 9.8

positive going threshold IR21362 9.6 10.4 11.2

V

and V

CC

negative going threshold IR21362 8.6 9.4 10.2

lockout hysteresis IR21362 0.5 1.0 —

Offset supply leakage current — — 50 V

Quiescent VBS supply current 20 60 150
Quiescent VCC supply current — 1 2 mA

Input bias current (LOUT = HI) — 150 400 µA V

BS

and VBS supply undervoltage IR2136 0.3 0.7 —

1,2,3 and LS1,2,3). The VO and IO parameters are referenced to COM and VS1,2,3

S

- V

BIAS

O

supply undervoltage IR2136 7.4 8.2 9.0

and L

O1,2,3

O

O1,2,3.

— 0.8 1.4 IO = 20 mA
— 0.3 0.6 IO = 20 mA

IR21363 10.7 11.2 11.7

IR21363 10.5 11.0 11.5

IR21363 — 0.2 —

4.9 5.2 5.5 V I

V

mV

V

µA

B1,2,3=VS1,2,3

= 600V

V

= 0V or 5V

IN =100µA

IN

LIN = 0V

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IR2136/IR21362/IR21363

(J&S)

Static Electrical Characteristics cont.

V

BIAS (VCC

are applicable to all six channels (H
and are applicable to the respective output leads: H

Symbol Definition Min. Typ. Max. Units Test Conditions

I

I

ITRIP+

I

ITRIP-

I

R

ON,RCIN

R

ON,FLT

, VBS1,2,3) = 15V unless otherwise specified. The VIN, VTH and IIN parameters are referenced to VSS and

I

LIN-

HIN+

I

HIN-

I

EN+

I

EN-

RCIN

I

O+

I

O-

Input bias current (LOUT = LO) — 100 250 V
Input bias current (HOUT = HI) IR2136(3) — 150 300 V

Input bias current (HOUT = LO) IR2136(3) — 100 250 V

“high” ITRIP input bias current — — 100 V
“low” ITRIP input bias current — 0 1 V
“high” ENABLE input bias current — — 100 V
“low” ENABLE input bias current — 0 1 V
RCIN input bias current — 0 1 V
Output high short circuit pulsed current 120 200 — VO=0V, PW ≤ 10 µs
Output low short circuit pulsed current 250 350 — VO=15V, PW ≤10 µs
RCIN low on resistance — 60 —
FAULT low on resistance — 60 —

1,2,3 and LS1,2,3). The VO and IO parameters are referenced to COM and VS1,2,3

S

O1,2,3

and L

IR21362

IR21362

O1,2,3.

— — 100 V

— 0 1 V

µA

mA

Ω

LIN = 5V
HIN = 0V
HIN = 5V
HIN = 5V
HIN = 0V

ITRIP

ITRIP
ENABLE
ENABLE

RCIN

= 5V
= 0V

= 5V

= 0V

= 0V or 15V

Dynamic Electrical Characteristics

VCC = VBS = V

Symbol Definition Min. Typ. Max. Units Test Conditions

t

on

t

off

t

r

t

f

t

EN

= 15V, V

BIAS

Turn-on propagation delay — 400 —
Turn-off propagation delay — 380 —
Turn-on rise time — 110 —
Turn-off fall time — 50 —
ENABLE low to output shutdown propagation delay — 400 — V

= VSS = COM, TA = 25oC and CL = 1000 pF unless otherwise specified.

S1,2,3

VIN = 0 & 5V

V

S1,2,3

IN, VEN

= 0 to 600V

= 0V or 5V

t

ITRIP

t

t

FLT

t

FILIN

t

FLTCLR

DT Deadtime — 250 — VIN = 0 & 5V
MT Matching delay ON and OFF — 0 80

MDT Matching delay, max (ton,t

PM Output pulse width matching, PWin - PWout (fig.2) — 0 75

NOTE: For high side PWM, HIN pulse width must be ≥ 1µsec

ITRIP to output shutdown propagation delay — 700 — V
ITRIP blanking time 100 150 — V

bl

ITRIP to FAULT propagation delay — 500 — V

Input filter time (HIN, LIN, EN) 100 200 — VIN = 0 & 5V
FAULT clear time RCIN: R=2meg, C=1nF — 1.8 — mS V

) - min (ton,t

(ton,toff are applicable to all 3 channels)

off

), — 0 75

off

nS

nS

= 5V

ITRIP

= 0V or 5V

IN

V

= 5V

ITRIP

= 0V or 5V

IN

V

= 5V

ITRIP

= 0V or 5V

IN

V

= 0V

ITRIP

External dead

time

>400nsec

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