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IR 2125
Datasheet
17 pgs181.47 Kb0
Datasheet (International Rectifier)
16 pgs501.94 Kb0

Datasheet IR2125 Datasheet (International Rectifier)

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Data Sheet No. PD-6.017D
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IR2125
CURRENT LIMITING SINGLE CHANNEL DRIVER
Features
n Floating channel designed for bootstrap operation
Fully operational to +500V Tolerant to negative transient voltage dV/dt immune
n Gate drive supply range from 12 to 18V n Undervoltage lockout n Current detection and limiting loop to limit driven
power transistor current
n Error lead indicates fault conditions and programs
shutdown time
n Output in phase with input
Description
The IR2125 is a high voltage, high speed power
MOSFET and IGBT driver with over-current limit­ing protection circuitry. Proprietary HVIC and latch immune CMOS technologies enable r uggedized monolithic construction. Logic inputs are compat­ible with standard CMOS or LSTTL outputs. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduc­tion. The protection circuitry detects over-current in the driven power transistor and limits the gate drive voltage. Cycle by cycle shutdown is pro­grammed by an external capacitor which directly controls the time interval between detection of the over-current limiting conditions and latched shut-
Product Summary
V
OFFSET
IO+/- 1A / 2A
V
OUT
V
CSth
t
(typ.) 150 & 150 ns
on/off
500V max.
12 - 18V
230 mV
Package
down. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low side configuration which operates up to 500 volts.
Typical Connection
V
V
CC
IN ERR COM
V
OUT
CS
V
up to 500V
B
S
TO
LOAD
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-107
IR2125
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Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param­eters are absolute voltages referenced to COM. The Ther mal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions.
Parameter Value
Symbol Definition Min. Max. Units
V
B
V
S
V
HO
V
CC
V
IN
V
ERR
V
CS
dVs/dt Allowable Offset Supply Voltage Transient — 50 V/ns
P
D
R
θJA
T
J
T
S
T
L
High Side Floating Supply Voltage -0.3 525 High Side Floating Offset Voltage VB - 25 VB + 0.3 High Side Floating Output Voltage VS - 0.3 V Logic Supply Voltage -0.3 25 V Logic Input Voltage -0.3 V Error Signal Voltage -0.3 V Current Sense Voltage VS - 0.3 V
Package Power Dissipation @ TA ≤ +25°C — 1.0 W Thermal Resistance, Junction to Ambient — 125 °C/W Junction Temperature — 150 Storage Temperature -55 150 °C Lead Temperature (Soldering, 10 seconds) — 300
CC CC
B
B
+ 0.3
+ 0.3 + 0.3
+ 0.3
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The V
Symbol Definition Min. Max. Units
V
B
V
S
V
HO
V
CC
V
IN
V
ERR
V
CS
T
A
Note 1: Logic operational for VS of -5 to +500V. Logic state held for VS of -5V to -VBS.
High Side Floating Supply Voltage VS + 12 VS + 18 High Side Floating Offset Voltage Note 1 500 High Side Floating Output Voltage V Logic Supply Voltage 0 18 V Logic Input Voltage 0 V Error Signal Voltage 0 V Current Sense Signal Voltage V Ambient Temperature -40 125 °C
B-108 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL
offset rating is tested with all supplies biased at 15V differential.
S
Parameter Value
S
S
V
B
CC CC
V
B
Dynamic Electrical Characteristics
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V
(VCC, VBS) = 15V, CL = 3300 pF and TA = 25°C unless otherwise specified. The dynamic electrical characteristics
BIAS
are measured using the test circuit shown in Figures 3 through 6.
Parameter Value
Symbol Definition Figure Min. Typ. Max. Units Test Conditions
t
on
t
off
t
sd
t t
t
cs
t
err
Turn-On Propagation Delay 7 — 150 200 Tur n-Off Propagation Delay 8 — 150 19 0 ERR Shutdown Propagation Delay 9 — 1.7 2.2 µs Turn-On Rise Time 10 — 43 60
r
Tur n-Off Fall Time 11 — 26 35
f
CS Shutdown Propagation Delay 12 — 0.7 1.2 CS to ERR Pull-Up Propagation Delay 13 — 9.0 12 C
Static Electrical Characteristics
V
(VCC, VBS) = 15V and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to
BIAS
COM. The VO and IO parameters are referenced to VS.
Parameter Value
Symbol Definition Figure Min. Typ. Max. Units Test Conditions
V
IH
V
V
CSTH+
V
CSTH-
V
OH
V
OL
I
LK
I
QBS
I
QCC
I
IN+
I
IN-
I
CS+
I
CS-
V
BSUV+
V
BSUV-
V
CCUV+
V
CCUV-
I
ERR
I
ERR+
I
ERR-
I
O+
I
O-
Logic “1” Input Voltage 14 2.2 — — VCC = 12V to 18V Logic “0” Input Voltage 15 — — 0.8 VCC = 12V to 18V
IL
CS Input Positive Going Threshold 16 150 230 320 VCC = 12V to 18V CS Input Negative Going Threshold 17 130 200 260 VCC = 12V to 18V High Level Output Voltage, V Low Level Output V oltage, V
BIAS
O
- V
Offset Supply Leakage Current 20 — — 50 VB = VS = 500V Quiescent VBS Supply Current 21 — 400 1000 VIN = VCS = 0V or 5V Quiescent VCC Supply Current 22 — 700 1200 VIN = VCS = 0V or 5V Logic “1” Input Bias Current 23 — 4.5 10 µA VIN = 5V Logic “0” Input Bias Current 24 — — 1.0 VIN = 0V “High” CS Bias Current 25 — 4.5 10 VCS = 3V “Low” CS Bias Current 26 — — 1.0 VCS = 0V VBS Supply Undervoltage Positive Going 27 8.5 9.2 10.0 Threshold VBS Supply Undervoltage Negative Going 28 7.7 8.3 9.0 Threshold VCC Supply Undervoltage Positive Going 29 8.3 8.9 9.6 Threshold VCC Supply Undervoltage Negative Going 30 7.3 8.0 8.7 Threshold ERR Timing Charge Current 31 65 100 130 VIN = 5V, VCS = 3V
ERR Pull-Up Current 32 8.0 15 — VIN = 5V, VCS = 3V
ERR Pull-Down Current 33 16 30 — VIN = 0V Output High Short Circuit Pulsed Current 34 1.0 1.6 — VO = 0V, V
Output Low Short Circuit Pulsed Current 35 2.0 3.3 — VO = 15V, V
IR2125
ns
ns
µs
V
O
18 — — 100 IO = 0A
mV
19 — — 100 IO = 0A
V
µA
mA
A
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-109
= 270 pF
ERR
ERR < V
ERR > V
IN
PW ≤ 10 µs
PW ≤ 10 µs
ERR+
ERR+
= 5V
= 0V
IN
IR2125
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Functional Block Diagram
V
ERR
COM
CC
UV
DETECT
UP
IN
1.8V
1.8V
SHUTDOWN
ERROR TIMING
LATCHED
SHIFTERS
PULSE
GEN
QR
S
PULSE
FILTER
HV
LEVEL
SHIFT
UV
DETECT
PULSE FILTER
V
B
HV
LEVEL
SHIFT
R R S
PULSE
GEN
DOWN SHIFTERS
Q
PRE
DRIVER
AMPLIFER
500ns
BLANK
COMPARATOR
BUFFER
0.23V
-
+
Lead Definitions
Lead
Symbol Description
V
CC
IN Logic input for gate driver output (HO), in phase with HO ERR Serves multiple functions; status reporting, linear mode timing and cycle by cycle logic
COM Logic ground V
B
HO V
S
CS
Logic and gate drive supply
shutdown
High side floating supply High side gate drive output High side floating supply return
Current sense input to current sense comparator
V
HO
V
CS
B
S
Lead Assignments
B-110 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL
8 Lead DIP
IR2125
Part Number
Device Information
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Process & Design Rule HVDCMOS 4.0 µm Transistor Count 410 Die Size 104 X 111 X 26 (mil) Die Outline
Thickness of Gate Oxide 800Å Connections Material Poly Silicon
Contact Hole Dimension 8 µm X 8 µm Insulation Layer Material PSG (SiO2)
Passivation Material PSG (SiO2) (1) Thickness 1.5 µm Passivation Material Proprietary* (2) Thickness Proprietary* Method of Saw Full Cut Method of Die Bond Ablebond 84 - 1 Wire Bond Method Thermo Sonic
Leadframe Material Cu
Pa ckage Types 8 Lead PDIP
Remarks: * Patent Pending
IR2125
First Width 4 µm Layer Spacing 6 µm
Thickness 5000Å
Material Al - Si (Si: 1.0% ±0.1%) Second Width 6 µm Layer Spacing 9 µm
Thickness 20,000Å
Thickness 1.5 µm
Material Au (1.0 mil / 1.3 mil)
Die Area Ag
Lead Plating Pb : Sn (37 : 63)
Materials EME6300 / MP150 / MP190
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-111
IR2125
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CS
ERR
HO
Figure 1. Input/Output Timing Diagram Figure 2. Floating Supply Voltage Transient T est Circuit
HV = 10 to 500V
≤ 50 V/ns
4
50%
IN
t
on
HO
Figure 3. Switching Time Waveform Definitions Figure 4. ERR Shutdown Waveform Definitions
t
10% 10%
CS
HO
Figure 5. CS Shutdown Waveform Definitions Figure 6. CS to ERR Waveform Definitions
r
90% 90%
50%
t
cs
50%
t
off
90%
50%
t
f
CS
OUT
50%
t
cs
90%
CS
t
err
50%
ERR
dt C
=× =×
I
dV
ERR
dt
C
1.8V
1.8V
100 uA
B-112 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL
IR2125
s)
T
s)
T
s)
T
s)
T
)
s)
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500
400
300
200
Max.
urn-On Delay Time (n
Typ.
100
0
-50 -25 0 25 50 75 100 125 Temperature (°C)
500
400
300
Max.
Typ.
200
urn-On Time (n
100
0
10 12 14 16 18 20
V
Supply Voltage (V)
BIAS
Figure 7A. Turn-On Time vs. Temperature Figure 7B. Turn-On Time vs. Voltag e
500
400
300
200
urn-Off Delay Time (n
Max. Typ.
100
500
400
300
Max.
200
urn-Off Time (ns
Typ.
100
0
-50 -25 0 25 50 75 100 125
Figure 8A. T urn-Off Time vs. Temperature Figure 8B. T urn-Off Time vs. Voltage
5.00
4.00
3.00
Max.
2.00
Typ.
1.00
ERR to Output Shutdown Delay Time (µ
0.00
-50 -25 0 25 50 75 100 125
Temperature (°C)
Temperature (°C)
0
10 12 14 16 18 20
5.00
4.00
3.00
2.00
Max.
Typ.
1.00
ERR to Output Shutdown Delay Time (µ
0.00 10 12 14 16 18 20
Figure 9B. ERR to Output Shutdown vs. VoltageFigure 9A. ERR to Output Shutdown vs. Temperature
V
Supply Voltage (V)
BIAS
V
Supply Voltage (V)
BIAS
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-113
IR2125
C
s)
T
s)
s)
T
)
T
)
C
s)
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100
80
60
Max.
Typ.
40
urn-On Rise Time (n
20
0
-50 -25 0 25 50 75 100 125 Temperature (°C)
100
80
Max.
60
Typ.
40
Turn-On Rise Time (n
20
0
10 12 14 16 18 20
V
Supply Voltage (V)
BIAS
Figure 10A. T urn-On Rise Time vs. Temperature Figure 10B. T urn-On Rise Time vs. V oltage
100
80
60
40
urn-Off Fall Time (ns
Max. Typ.
20
100
80
60
Max.
40
urn-Off Fall Time (ns
Typ.
20
0
-50 -25 0 25 50 75 100 125 Temperature (°C)
Figure 11A. Turn-Off Fall Time vs. Temperature Figure 11B. Turn-Off Fall Time vs. Voltage
2.00
1.60
1.20
Max.
0.80
Typ.
0.40
S to Output Shutdown Delay Time (µ
0.00
-50 -25 0 25 50 75 100 125 Temperature (°C)
Figure 12A. CS to Output Shutdown vs. Temperature Figure 12B. CS to Output Shutdown vs. Voltage
B-114 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL
0
10 12 14 16 18 20
2.00
1.60
Max.
1.20
Typ.
0.80
0.40
S to Output Shutdown Delay Time (µ
0.00 10 12 14 16 18 20
V
Supply Voltage (V)
BIAS
V
Supply Voltage (V)
BIAS
IR2125
L
)
s)
s)
L
)
L
)
L
)
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20.0
16.0
Max.
12.0
Typ.
8.0
CS to ERR Pull-Up Delay Time (µ
4.0
0.0
-50 -25 0 25 50 75 100 125
5.00
4.00
3.00
Min.
2.00
ogic "1" Input Threshold (V
1.00
Temperature (°C)
20.0
16.0
12.0
Max.
Typ.
8.0
CS to ERR Pull-Up Delay Time (µ
4.0
0.0 10 12 14 16 18 20
V
Supply Voltage (V)
BIAS
Figure 13B. CS to ERR Pull-Up vs. VoltageFigure 13A. CS to ERR Pull-Up vs. Temperature
5.00
4.00
3.00
Min.
2.00
ogic "1" Input Threshold (V
1.00
0.00
-50 -25 0 25 50 75 100 125
Figure 14A. Logic “1” Input Threshold vs. Temperature Figure 14B. Logic “1” Input Threshold vs. Voltage
5.00
4.00
3.00
2.00
ogic "0" Input Threshold (V
Max.
1.00
0.00
-50 -25 0 25 50 75 100 125
Figure 15A. Logic “0” Input Threshold vs. Temperature Figure 15B. Logic “0” Input Threshold vs. Voltage
Temperature (°C)
Temperature (°C)
0.00 10 12 14 16 18 20
5.00
4.00
3.00
2.00
ogic "0" Input Threshold (V
1.00
Max.
0.00 10 12 14 16 18 20
V
Logic Supply Voltage (V)
CC
V
Logic Supply Voltage (V)
CC
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-115
IR2125
H
)
C
)
C
)
C
)
C
)
H
)
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500
400
Max.
300
Typ.
200
Min.
100
S Input Positive Going Threshold (mV
0
-50 -25 0 25 50 75 100 125 Temperature (°C)
500
400
Max.
300
Typ.
200
Min.
100
S Input Positive Going Threshold (mV
0
10 12 14 16 18 20
V
Floating Supply Voltage (V)
BS
Figure 16A. CS Input Threshold (+) vs. Temperature Figure 16B. CS Input Threshold (+) vs. Voltag e
500
400
300
Max.
Typ.
200
Min.
100
S Input Negative Going Threshold (mV
500
400
300
Max.
Typ.
200
Min.
100
S Input Negative Going Threshold (mV
0
-50 -25 0 25 50 75 100 125 Temperature (°C)
Figure 17A. CS Input Threshold (-) vs. Temperature Figure 17B. CS Input Threshold (-) vs. Voltag e
1.00
0.80
0.60
0.40
igh Level Output Voltage (V
0.20
Max.
0.00
-50 -25 0 25 50 75 100 125 Temperature (°C)
Figure 18A. High Level Output vs. Temperature Figure 18B. High Level Output vs. Volta ge
B-116 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL
0
10 12 14 16 18 20
1.00
0.80
0.60
0.40
igh Level Output Voltage (V
0.20
Max.
0.00 10 12 14 16 18 20
V
Floating Supply Voltage (V)
BS
V
Floating Supply Voltage (V)
BS
IR2125
)
O
)
L
)
L
)
O
)
)
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1.00
0.80
0.60
0.40
ow Level Output Voltage (V
0.20
Max.
0.00
-50 -25 0 25 50 75 100 125 Temperature (°C)
1.00
0.80
0.60
0.40
ow Level Output Voltage (V
0.20
Max.
0.00 10 12 14 16 18 20
V
Floating Supply Voltage (V)
BS
Figure 19A. Low Level Output vs. Temperature Figure 19B. Low Level Output vs. Voltage
500
400
300
200
ffset Supply Leakage Current (µA
100
Max.
0
-50 -25 0 25 50 75 100 125 Temperature (°C)
500
400
300
200
ffset Supply Leakage Current (µA
100
Max.
0
0 100 200 300 400 500
V
Boost Voltage (V)
B
Figure 20A. Offset Supply Current vs. Temperature Figure 20B. Offset Supply Current vs. Voltage
2.00
1.60
1.20
Max.
0.80
Supply Current (mA
BS
V
0.40
Typ.
0.00
-50 -25 0 25 50 75 100 125
Figure 21A. V
BS
2.00
1.60
1.20
Max.
0.80
Supply Current (mA
BS
V
0.40
Typ.
0.00
Temperature (°C)
Supply Current vs. Temperature Figure 21B. VBS Supply Current vs. Voltage
10 12 14 16 18 20
V
Floating Supply Voltage (V)
BS
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-117
IR2125
L
)
L
)
V
)
V
)
L
)
L
)
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2.00
1.60
Max.
1.20
0.80
Supply Current (mA
Typ.
CC
0.40
0.00
-50 -25 0 25 50 75 100 125
Figure 22A. V
25
20
15
10
Max.
ogic "1" Input Bias Current (µA
5
Typ.
0
-50 -25 0 25 50 75 100 125
Temperature (°C)
Supply Current vs. Temperature Figure 22B. V
CC
Temperature (°C)
2.00
1.60
1.20
Max.
0.80
Supply Current (mA
Typ.
CC
0.40
0.00 10 12 14 16 18 20
25
20
15
Max.
10
ogic "1" Input Bias Current (µA
Typ.
5
0
10 12 14 16 18 20
V
Logic Supply Voltage (V)
CC
Supply Current vs. Voltage
CC
V
Logic Supply Voltage (V)
CC
Figure 23A. Logic “1” Input Current vs. Temperature Figure 23B. Logic “1” Input Current vs. Voltage
5.00
4.00
3.00
2.00
ogic "0" Input Bias Current (µA
Max.
1.00
0.00
-50 -25 0 25 50 75 100 125 Temperature (°C)
Figure 24A. Logic “0” Input Current vs. Temperature Figure 24B. Logic “0” Input Current vs. Voltage
B-118 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL
5.00
4.00
3.00
2.00
ogic "0" Input Bias Current (µA
Max.
1.00
0.00 10 12 14 16 18 20
V
Logic Supply Voltage (V)
CC
IR2125
)
"
)
"
)
"
)
"
)
)
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25.0
20.0
15.0
10.0
Max.
High" CS Bias Current (µA
Typ.
5.0
0.0
-50 -25 0 25 50 75 100 125 Temperature (°C)
25.0
20.0
15.0
Max.
10.0
High" CS Bias Current (µA
Typ.
5.0
0.0 10 12 14 16 18 20
V
Floating Supply Voltage (V)
BS
Figure 25A. “High” CS Bias Current vs. Temperature Figure 25B. “High” CS Bias Current vs. Voltage
5.00
4.00
3.00
2.00
Low" CS Bias Current (µA
Max.
1.00
5.00
4.00
3.00
2.00
Low" CS Bias Current (µA
Max.
1.00
0.00
-50 -25 0 25 50 75 100 125
Figure 26A. “Low” CS Bias Current vs. Temperature Figure 26B. “Low” CS Bias Current vs. Voltage
11.0
Max.
10.0
Typ.
9.0
Min.
8.0
Undervoltage Lockout + (V
BS
V
7.0
6.0
-50 -25 0 25 50 75 100 125
Figure 27. V
Undervoltage (+) vs. Temperature Figure 28. VBS Undervoltage (-) vs. Temperature
BS
Temperature (°C)
Temperature (°C)
0.00 10 12 14 16 18 20
11.0
10.0
Max.
9.0
Typ.
8.0
Min.
VBS Undervoltage Lockout - (V
7.0
6.0
-50 -25 0 25 50 75 100 125
V
Floating Supply Voltage (V)
BS
Temperature (°C)
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-119
IR2125
)
V
)
V
)
)
)
)
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11.0
10.0
Max.
Typ.
9.0
Min.
8.0
Undervoltage Lockout + (V
CC
7.0
6.0
-50 -25 0 25 50 75 100 125
Figure 29. V
250
200
150
100
ERR Timing Charge Current (µA
50
CC
Max.
Typ.
Min.
Temperature (°C)
Undervoltage (+) vs. Temperature Figure 30. VCC Undervoltage (-) vs. Temperature
11.0
10.0
9.0
Max.
Typ.
8.0
Undervoltage Lockout - (V
Min.
CC
7.0
6.0
-50 -25 0 25 50 75 100 125
250
200
150
Max.
Typ.
100
Min.
ERR Timing Charge Current (µA
50
Temperature (°C)
0
-50 -25 0 25 50 75 100 125 Temperature (°C)
Figure 31A. ERR Timing Charge Current vs. Temperature Figure 31B. ERR Timing Charge Current vs. Voltage
25.0
20.0
Typ.
15.0
Min.
10.0
ERR Pull-Up Current (µA
5.0
0.0
-50 -25 0 25 50 75 100 125 Temperature (°C)
Figure 32A. ERR Pull-Up Current vs. Temperature Figure 32B. ERR Pull-Up Current vs. Voltage
B-120 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL
0
10 12 14 16 18 20
25.0
20.0
15.0
Typ.
10.0
ERR Pull-Up Current (µA
Min.
5.0
0.0 10 12 14 16 18 20
V
Logic Supply Voltage (V)
CC
V
Logic Supply Voltage (V)
CC
IR2125
O
)
O
)
E
)
E
)
O
)
O
)
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50
40
Typ.
30
Min.
20
RR Pull-Down Current (µA
10
0
-50 -25 0 25 50 75 100 125 Temperature (°C)
50
40
30
Typ.
20
RR Pull-Down Current (µA
Max.
10
0
10 12 14 16 18 20
V
Logic Supply Voltage (V)
CC
Figure 33A. ERR Pull-Down Current vs.Temperature Figure 33B. ERR Pull-Down Current vs. Voltage
2.50
2.00
Typ.
1.50
Min.
1.00
utput Source Current (A
0.50
2.50
2.00
1.50
Typ.
1.00
utput Source Current (A
Min.
0.50
0.00
-50 -25 0 25 50 75 100 125
Figure 34A. Output Source Current vs.Temperature Figure 34B. Output Source Current vs. Voltage
5.00
4.00
Typ.
3.00
Min.
2.00
utput Sink Current (A
1.00
0.00
-50 -25 0 25 50 75 100 125
Figure 35A. Output Sink Current vs.Temperature Figure 35B. Output Sink Current vs. Volta g e
Temperature (°C)
Temperature (°C)
0.00 10 12 14 16 18 20
5.00
4.00
3.00
Typ.
2.00
utput Sink Current (A
Min.
1.00
0.00 10 12 14 16 18 20
V
Floating Supply Voltage (V)
BS
V
Floating Supply Voltage (V)
BS
CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-121
IR2125
T
s)
T
)
)
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500
400
300
200
urn-On Time (n
Typ.
100
0
5 7.5 10 12.5 15
Input Voltage (V)
VCC = 15V
500
400
300
200
urn-Off Time (ns
Typ.
100
0
5 7.5 10 12.5 15
Input Voltage (V)
Figure 36A. Turn-On Time vs. Input Voltage Figure 36B. Turn-Off Time vs. Input Voltage
0.00
-3.00
Typ.
-6.00
-9.00
Offset Supply Voltage (V
S
V
-12.00
VCC = 15V
-15.00 10 12 14 16 18 20
Figure 37. Maximum V
B-122 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL
V
Floating Supply Voltage (V)
BS
Negative Offset vs. Supply
S
Voltage
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