International Rrectifier IR2110E6 User Manual

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Data Sheet No. PD-6.065

IR2110E6

HIGH AND LOW SIDE DRIVER

Features

n Floating channel designed for bootstrap operation

Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune

n Gate drive supply range from 10 to 20V
n Undervoltage lockout for both channels
n Separate logic supply range from 5 to 20V

Logic and power ground ±5V offset

n CMOS Schmitt-triggered inputs with pull-down
n Cycle by cycle edge-triggered shutdown logic
n Matched propagation delay for both channels

n Outputs in phase with inputs

Absolute Maximum Ratings

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute
voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air
conditions. Additional information is shown in Figures 28 through 35.

Symbol Parameter Min. Max. Units

V

B

V

S

V

HO

V

CC

V

LO

V

DD

V

SS

V

IN

dVS/dt Allowable Offset Supply Voltage Transient (Fig. 16) — 50 V/ns

P

D

R

thJA

T

j

T

S

T

L

High Side Floating Supply Absolute Voltage -0.5 VS + 20
High Side Floating Supply Offset Voltage — 600
High Side Output Voltage VS -0.5 V
Low Side Fixed Supply Voltage -0.5 20
Low Side Output Voltage -0.5 VCC + 0.5
Logic Supply Voltage -0.5 VSS + 20
Logic Supply Offset Voltage VCC - 20 V
Logic Input Voltage (HIN, LIN & SD) VSS - 0.5 V

Package Power Dissipation @ TA ≤ = 25°C (Fig. 19) — 1.6 W
Thermal Resistance, Junction to Ambient — 75 °C/W
Junction Temperature -55 125
Storage Temperature -55 150
Package Mounting Surface Temperature 300 (for 5 seconds)
Weight

Product Summary

V

OFFSET

+/- 2A / 2A

I

O

V

OUT

t

(typ.) 120 & 94 ns

on/off

Delay Matching 10 ns

600V max.

10 - 20V

Description

The IR2110E6 is a high voltage, high speed

power MOSFET and IGBT driver with independent
high and low side referenced output channels. Pro­prietary HVIC and latch immune CMOS technolo­gies enable ruggedized monolithic construction.
Logic inputs are compatible with standard CMOS or
LSTTL outputs. The output drivers feature a high
pulse current buffer stage designed for minimum
driver cross-conduction. Propagation delays are
matched to simplify use in high frequency applica­tions. The floating channel can be used to drive an
N-channel power MOSFET or IGBT in the high side
configuration which operates up to 600 volts.

+ 0.5

B

+ 0.5

CC

+ 0.5

DD

0.45 (typical) g

V

°C

IR2110E6

Recommended Operating Conditions

The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The VS and VSS offset ratings are tested with all supplies biased at 15V differential. T ypical
ratings at other bias conditions are shown in Figures 36 and 37.

Symbol Parameter Min. Max. Units

V

B

V

S

V

HO

V

CC

V

LO

V

DD

V

SS

V

IN

Dynamic Electrical Characteristics

V

(VCC, VBS, VDD) = 15V, and VSS = COM unless otherwise specified. The dynamic electrical

BIAS

characteristics are measured using the test circuit shown in Figure 3.

Symbol Parameter Min Typ. Max. Min. Max Units Test Conditions

t

on

t

off

t

sd

trTurn-On Rise Time — 25 35 — 50 CL = 1000pf
tfTurn-Off Fall Time — 17 25 — 40 CL = 1000pf

Mt Delay Matching, HS & LS Turn-On/Off — — 10 — —

High Side Floating Supply Absolute Voltage VS + 10 VS + 20
High Side Floating Supply Offset Voltage -4 600

High Side Output Voltage V

S

V

B

Low Side Fixed Supply Voltage 10 20
Low Side Output Voltage 0 V

CC

Logic Supply Voltage VSS + 5 VSS + 20
Logic Supply Offset Voltage -5 5
Logic Input Voltage (HIN, LIN & SD) V

Tj = 25°C

Tj = -55 to

SS

V

DD

125°C

Turn-On Propagation Delay — 120 150 — 260 VS = 0V
Turn-Off Propagation Delay — 94 125 — 220 VS = 600V

Shutdown Propagation Delay — 110 140 — 2 3 5 VS = 600V

ns

Hton-Lt

on

/ Ht

off

-Lt

off

V

Typical Connection

V

DD

HIN

SD
LIN

V

SS

V

CC

V

DD

HIN
SD
LIN
V

SS

HO

V

COM

LO

up to 500V

up to 600V

V

B

V

S

CC

TO

LOAD

IR2110E6

Static Electrical Characteristics

V

(VCC, VBS, VDD) = 15V, unless otherwise specified. The VIN, VTH and IIN parameters are referenced to VSS and

BIAS

are applicable to all three logic input leads: HIN, LIN and SD. The VO and IO parameters are referenced to COM and are
applicable to the respective output leads: HO or LO.

Tj = 25°C

Symbol Parameter Min Typ. Max. Min. Max Units Test Conditions

V

IH

Logic “1” Input Voltage 3.1 — — 3.3 — VDD = 5V

6.4 — — 6.8 — V

9.5 — — 10 — VDD = 15V

12.6 — — 13.3 — V VDD = 20V

V

Logic “0” Input Voltage — — 1.8 — 1.7 VDD = 5V

IL

— — 3.8 — 3.6 VDD = 10V
— — 6 — 5.7 W VDD = 15V

— — 8.3 — 7.9 V VDD = 20
V
V
I
I
I
I
I
I
V

High Level Output Voltage, V

OH

Low Level Output Voltage, VO — — 0.1 — 0.1 VIN = VIL, IO = 0A

OL

Offset Supply Leakage Current — — 50 — 25 0 VB = VS = 600V

LK

Quiescent VBS Supply Current — 125 230 — 5 00 V

QBS

Quiescent VCC Supply Current — 180 340 — 600 V

QCC

Quiescent VDD Supply Current — 5 30 — 60 V

QDD

Logic “1” Input Bias Current — 1 5 40 — 7 0 VIN = V

IN+

Logic “0” Input Bias Current — — 1 — 1 0 VIN = 0V

IN-

BSUV+VBS

Supply Undervoltage Positive 7.5 8.6 9.7 — —

- VO— 0.7 1.2 — 1.5 VIN = VIH, IO = 0A

BIAS

Going Threshold

V

BSUV-VBS

Supply Undervoltage Negative 7.0 8.2 9.4 — —

Going Threshold

V

CCUV+VCC

Supply Undervoltage Positive 7.4 8.5 9.6 — —

Going Threshold

V

CCUV-VCC

Supply Undervoltage Negative 7.0 8.2 9.4 — —

Going Threshold

I

Output High Short Circuit Pulsed 2 ———— V

O+

Current PW < = 10

I

Output Low Short Circuit Pulsed 2 ———— V

O-

Current PW < = 10

Tj = -55 to

125°C

V

V

µA

V

A

= 10V

DD

= 0V or V

IN

= 0V or V

IN

= 0V or V

IN

= 0V, VIN = V

OUT

= 15V, VIN = 0V

OUT

DD
DD
DD

DD

DD

µs

µs

IR2110E6

Figure 1. Input/Output Timing Diagram Figure 2. Floating Supply Voltage T ransient Test Circuit

10 to 600V

50%

t

off

90% 90%

t

f

(0 to 600V)

HIN
LIN

50%

t

on

t

r

HO
LO

Figure 3. Switching Time Test Circuit Figure 4. Switching Time Waveform Definition

HIN
LIN

SD

50%

t

sd

HO

90%

LO

10% 10%

50% 50%

LO

MT

HO

10%

MT

90%

HOLO

Figure 5. Shutdown Waveform Definitions

Figure 6. Delay Matching Waveform Definitions

IR2110E6

e (

T

e (

e (

T

e (

S

me

S

e

250

200

150

Max.

Typ.

100

urn-On Delay Tim

50

0

-50 -25 0 25 50 75 100 125
Temperature (°C)

250

200

Max.

Typ.

150

100

Turn-On Delay Tim

50

0

10 12 14 16 18 20

V

Suppl y Voltage (V)

BIAS

Figure 7A. T urn-On Time vs. Temperature Figure 7B. Turn-On Time vs. Voltage

250

200

150

Max.

100

Typ.

Turn-Off Delay Tim

50

250

200

Max.

150

Typ.

100

urn-Off Delay Tim

50

0

-50 -25 0 25 50 75 100 125
Temperature (°C)

0

10 12 14 16 18 20

V

Suppl y Voltage (V)

BIAS

Figure 8A. Turn-Off T ime vs. Temperature Figure 8B. Turn-Off Time vs. Voltage

250

200

150

Max.

100

Typ.

hutdown Delay Tim

50

0

-50 -25 0 25 50 75 100 125
Temperature (°C)

Figure 9A. Shutdown Time vs. Temperature

250

200

Max.

150

Typ.

100

hutdown Delay ti

50

0

10 12 14 16 18 20

V

Suppl y Voltage (V)

BIAS

Figure 9B. Shutdown Time vs. Voltage