International Rrectifier IR2105 User Manual
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Data Sheet No. PD60139J
IR2105
HALF BRIDGE DRIVER
Features
• Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout
• 5V Schmitt-triggered input logic
• Cross-conduction prevention logic
• Internally set deadtime
• High side output in phase with input
• Match propagation delay for both channels
Description
The IR2105 is a high voltage, high speed power
MOSFET and IGBT driver with dependent high and
low side referenced output channels. Proprietary
HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic
input is compatible with standard CMOS or LSTTL
outputs. The output drivers feature a high pulse
current buffer stage designed for minimum driver
cross-conduction. The floating channel can be used
to drive an N-channel power MOSFET or IGBT in
the high side configuration which operates from 10
to 600 volts.
Product Summary
V
OFFSET
IO+/- 130 mA / 270 mA
V
OUT
t
(typ.) 680 & 150 ns
on/off
Deadtime (typ.) 520 ns
600V max.
10 - 20V
Packages
8 Lead PDIP
8 Lead SOIC
T ypical Connection
V
CC
IN
V
CC
IN
COM
LO
V
HO
V
up to 600V
B
TO
S
LOAD
IR2105
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
Symbol Definition Min. Max. Units
V
B
V
S
V
HO
V
CC
V
LO
V
IN
dVs/dt Allowable offset supply voltage transient — 50 V/ns
P
D
Rth
JA
T
J
T
S
T
L
High side floating absolute voltage -0.3 625
High side floating supply offset voltage VB - 25 VB + 0.3
High side floating output voltage VS - 0.3 V
Low side and logic fixed supply voltage -0.3 25
Low side output voltage -0.3 VCC + 0.3
Logic input voltage -0.3 V
Package power dissipation @ TA ≤ +25°C (8 Lead DIP) — 1.0
(8 Lead SOIC) — 0.625
Thermal resistance, junction to ambient (8 Lead DIP) — 125
(8 Lead SOIC) — 200
Junction temperature — 150
Storage temperature -55 150 °C
Lead temperature (soldering, 10 seconds) — 300
CC
B
+ 0.3
+ 0.3
°C/W
V
W
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential.
Symbol Definition Min. Max. Units
V
B
V
S
V
HO
V
CC
V
LO
V
IN
T
A
Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS.
2
High side floating supply absolute voltage VS + 10 VS + 20
High side floating supply offset voltage Note 1 600
High side floating output voltage V
Low side and logic fixed supply voltage 10 20
Low side output voltage 0 V
Logic input voltage 0 V
Ambient temperature -40 125
S
V
B
CC
CC
V
°C
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IR2105
Dynamic Electrical Characteristics
V
(VCC, VBS) = 15V, CL = 1000 pF and TA = 25°C unless otherwise specified.
BIAS
Symbol Definition Min. Typ. Max. Units Test Conditions
t
on
t
off
t
t
DT Deadtime, LS turn-off to HS turn-on & 4 00 520 650
MT Delay matching, HS & LS turn-on/off — — 60
Static Electrical Characteristics
V
BIAS
COM. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
Symbol Definition Min. Typ. Max. Units Test Conditions
V
V
V
OH
V
OL
I
LK
I
QBS
I
QCC
I
IN+
I
IN-
V
CCUV+VCC
V
CCUV-
I
O+
I
O-
Turn-on propagation delay — 68 0 820 VS = 0V
Turn-off propagation delay — 15 0 220 VS = 600V
Turn-on rise time — 10 0 170
r
Turn-off fall time — 50 90
f
HS turn-on to LS turn-off
(VCC, VBS) = 15V and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to
Logic “1” (HO) & Logic “0” (LO) Input Voltage 3 — — VCC = 10V to 20V
IH
Logic “0” (HO) & Logic “1” (LO) Input Voltage — — 0.8 VCC = 10V to 20V
IL
High Level Output Voltage, V
Low Level Output Voltage, V
Offset Supply Leakage Current — — 50 VB = VS = 600V
Quiescent VBS Supply Current — 30 55 V
Quiescent VCC Supply Current — 150 270 VIN = 0V or 5V
Logic “1” Input Bias Current — 3 10 VIN = 5V
Logic “0” Input Bias Current — — 1 VIN = 0V
Supply Undervoltage Positive Going 8 8.9 9.8
Threshold
VCC Supply Undervoltage Negative Going 7.4 8.2 9
Threshold
Output High Short Circuit Pulsed Current 130 210 — VO = 0V
Output Low Short Circuit Pulsed Current 270 360 — VO = 15V
BIAS
O
- V
O
— — 100 IO = 0A
— — 100 IO = 0A
ns
V
mV
µA
V
mA
= 0V or 5V
IN
PW ≤ 10 µs
PW ≤ 10 µs
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3
IR2105
Functional Block Diagram
V
B
HV
LEVEL
DEAD
IN
TIME
DETECT
DEAD
TIME
UV
PULSE
GEN
SHIFT
PULSE
FILTER
Q
R
S
Lead Definitions
Lead
Symbol Description
IN Logic input for high and low side gate driver outputs (HO and LO), in phase with HO
V
B
HO High side gate drive output
V
S
V
CC
LO Low side gate drive output
COM Low side return
High side floating supply
High side floating supply return
Low side and logic fixed supply
HO
V
S
V
LO
COM
CC
Lead Assignments
COM
LO
8 Lead PDIP 8 Lead SOIC
IR2105 IR2105S
4
COM
5
LO
5
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