International Rrectifier IR2101-S User Manual

查询IR2101S供应商

Data Sheet No. PD60043-N

IR2101 IR2102

(S) (S)

HIGH AND LOW SIDE DRIVER

Features

• Floating channel designed for bootstrap operation

Fully operational to +600V Tolerant to negative transient voltage dV/dt immune

• Gate drive supply range from 10 to 20V

• Undervoltage lockout

• 3.3V, 5V, and 15V logic input compatible

• Matched propagation delay for both channels

• Outputs in phase with inputs (IR2101) or out of

phase with inputs (IR2102)

Description

The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Product Summary

V

OFFSET

+/- 130 mA / 270 mA

I

O

V

OUT

t

(typ.) 160 & 150 ns

on/off

Delay Matching 50 ns

600V max.

10 - 20V

Packages

8 Lead SOIC

8 Lead PDIP

Typical Connection

up to 600V

V

CC

HIN

LIN

(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.

V HIN LIN

www.irf.com 1

CC

IR2101

HO

LOCOM

V

B

V HIN LIN

TO

LOAD

up to 600V

V

CC

HO

LOCOM

B

V

S

TO

LOAD

V

S

V

CC

HIN

LIN

IR2102

IR2101/IR2102

(S)

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Symbol Definition Min. Max. Units

V

B

V

S

V

HO

V

CC

V

LO

V

IN

dVS/dt Allowable offset supply voltage transient — 50 V/ns

P

D

Rth

JA

T

J

T

S

T

L

High side floating supply voltage -0.3 625 High side floating supply offset voltage VB - 25 VB + 0.3

CC

B

+ 0.3

High side floating output voltage VS - 0.3 V Low side and logic fixed supply voltage -0.3 25 Low side output voltage -0.3 VCC + 0.3 Logic input voltage (HIN & LIN) -0.3 V

Package power dissipation @ TA ≤ +25°C (8 lead PDIP) — 1.0

(8 lead SOIC) — 0.625

Thermal resistance, junction to ambient (8 lead PDIP) — 125

(8 lead SOIC) — 200 Junction temperature — 150 Storage temperature -55 150 Lead temperature (soldering, 10 seconds) — 300

V

W

°C/W

°C

Recommended Operating Conditions

The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential.

Symbol Definition Min. Max. Units

V

B

V

S

V

HO

V

CC

V

LO

V

IN

T

A

Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. (Please refer to the Design Tip DT97-3 for more details).

2 www.irf.com

High side floating supply absolute voltage VS + 10 VS + 20 High side floating supply offset voltage Note 1 600 High side floating output voltage V Low side and logic fixed supply voltage 10 20 Low side output voltage 0 V Logic input voltage (HIN & LIN) (IR2101) & (HIN & LIN) (IR2102) 0 V Ambient temperature -40 125

S

V

B

CC CC

V

°C

IR2101/IR2102

(S)

Dynamic Electrical Characteristics

V

(VCC, VBS) = 15V, CL = 1000 pF and TA = 25°C unless otherwise specified.

BIAS

Symbol Definition Min. T yp. Max. Units T est Conditions

t

on

t

off t

t

MT Delay matching, HS & LS turn-on/off — — 50

Turn-on propagation delay — 160 220 VS = 0V Turn-off propagation delay — 150 220 VS = 600V Turn-on rise time — 100 170

r

Turn-off fall time — 50 90

f

ns

Static Electrical Characteristics

V

(VCC, VBS) = 15V and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to

BIAS

COM. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO.

Symbol Definition Min. T yp. Max. Units Test Conditions

V

OH

V

OL

I

LK

I

QBS

I

QCC

I

IN+

I

IN-

V

CCUV+VCC

V

CCUV-

I

O+

I

O-

Logic “1” input voltage (IR2101)

IH

Logic “0” input voltage (IR2102) Logic “0” input voltage (IR2101)

IL

Logic “1”input voltage (IR2102) High level output voltage, V Low level output voltage, V Offset supply leakage current — — 50 VB = VS = 600V Quiescent VBS supply current — 30 55 V Quiescent VCC supply current — 150 270 VIN = 0V or 5V Logic “1” input bias current

Logic “0” input bias current

supply undervoltage positive going 8 8.9 9.8 threshold VCC supply undervoltage negative going 7.4 8.2 9 threshold Output high short circuit pulsed current 130 210 — VO = 0V

Output low short circuit pulsed current 270 360 — VO = 15V

BIAS

O

- V

O

3

—

— — 100 IO = 0A — — 100 IO = 0A

—

3

—

VCC = 10V to 20V

—

V

VCC = 10V to 20V

0.8

mV

10

µA

1

V

mA

= 0V or 5V

IN

VIN = 5V (IR2101) VIN = 0V (IR2102) VIN = 0V (IR2101)

VIN = 5V (IR2102)

V

= Logic “1”

IN

PW ≤ 10 µs

V

= Logic “0”

IN

PW ≤ 10 µs

www.irf.com 3

IR2101/IR2102

(S)

Functional Block Diagram

V

B

HIN

LIN

HIN

Vcc

UV

DETECT

UV

DETECT

PULSE

GEN

IR2101

PULSE

GEN

HV

LEVEL

SHIFT

HV

LEVEL

SHIFT

PULSE FILTER

PULSE

FILTER

Q R S

HO

V

LO

COM

V

B

HO

V

S

V

S

CC

LIN

LO

COM

IR2102

4 www.irf.com