International Rrectifier IR1150-S -PbF User Manual

µPFC ONE CYCLE CONTROL PFC IC

Features

• PFC with IR proprietary “One Cycle Control”

• Continuous conduction mode (CCM) boost type PFC

• No line voltage sense required

• Programmable switching frequency (50kHz-200kHz)

• Programmable output overvoltage protection

• Brownout and output undervoltage protection

• Cycle-by-cycle peak current limit

• Soft start

• User initiated micropower “Sleep Mode”

Description

The µPFC IR1150 is a power factor correction (PFC) control IC designed to operate in continuous conduction mode (CCM) over a wide range input line voltages. The IR1150 is based on IR's proprietary "One Cycle Control" (OCC) technique providing a cost effective solution for PFC. The proprietary control method allows major reductions in component count, PCB area and design time while delivering the same high system performance as traditional solutions. The IC is fully protected and eliminates the often noise sensitive line voltage sensing requirements of existing solutions. The IR1150 features include programmable switching frequency, programmable dedicated over voltage protection, soft start, cycle- by-cycle peak current limit, brownout, open loop, UVLO and micropower startup current. In addition, for low standby power requirements (Energy Star, 1W Standby, Blue Angel, etc.), the IC can be driven into sleep mode with total current consumption below 200µA, by pulling the OVP pin below 0.62V.

Data Sheet No. PD60230 revD

IR1150(S)(PbF)

IR1150I(S)(PbF)

• Open loop protection

• Maximum duty cycle limit of 98%

• User programmable fixed frequency operation

• Min. off time of 150-350ns over freq range

• VCC under voltage lockout

• Internally clamped 13V gate drive

• Fast 1.5A peak gate drive

• Micropower startup (<200 µA)

• Latch immunity and ESD protection

• Parts also available Lead-Free

Packages

8-Lead SOIC

8-Lead PDIP

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IR1150(S)/IR1150I(S)(PbF)

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltages are absolute voltages referenced to COM. Thermal resistance and power dissipation are measured under board mounted and still air conditions.

Parameters Symbols Min. Max.

V

VCC voltage

Freq. voltage

ISNS voltage

OVP/EN voltage

VFB voltage

COMP voltage

Gate voltage

Continuous gate current

Max peak gate current

Junction temperature

Storage temperature

Thermal resistance R

Package power dissipation PD

ESD protection

CC

V

FREQ

V

ISNS

V

OVP/EN

VFB -0.3 10.5 V

V

COMP

V

GATE

I

GATE

I

GATEPK

T

θ JA

V

ESD

Units

Remarks

-0.3 22 V

. -0.3 10.5 V

-10 3 V

-0.3 9 V

-0.3 10 V

-0.3 18 V

-5 5 mA

-1.5 1.5 A

-40 150 ˚C

J

-55 150 ˚C

S

— 2 kV

— 128 ˚C/W

— 84 ˚C/W — 675 mW — 1000 mW

Not internally clamped

SOIC-8 PDIP-8 SOIC-8 T PDIP-8 T

AMB

= 25 ˚C

AMB

= 25 ˚C

Human body model*

Recommended Operating Conditions

Recommended operating conditions for reliable operation with margin

Parameters Symbols Min. Typ. Max. Units Remarks

Supply voltage VCC 15 18 20 V

Junction temperature TJ -25 — 125 °C Ambient temperature TA 0 — 70 °C IR1150(S)

Ambient temperature TA -25 — 85 °C IR1150I(S)

Switching frequency FSW 50 — 200 kHz

Electrical Characteristics

The electrical characteristics involve the spread of values guaranteed within the specified supply voltage and junction temperature range T

not otherwise stated, a supply voltage of V

Supply Section

Parameters Symbols

VCC turn-on threshold VCC ON 12.2 12.7 13.2 V

VCC turn-off threshold (under voltage lock out)

*Per EIA/JESD22-A114-B (discharging a 100pF capacitor through a 1.5KΩ series resistor)

from – 25°C to 125°C. Typical values represent the median values, which are related to 25°C. If

J

VCC UVLO 10.2 10.7 11.2 V

=15V is assumed for test condition

CC

Min.

Typ. Max.

Units

Remarks

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IR1150(S)/IR1150I(S)(PbF)

Electrical Characteristics cont.

The electrical characteristics involve the spread of values guaranteed within the specified supply voltage and junction temperature range T otherwise stated, a supply voltage of V

Parameters Symbols Min. Typ. Max. Units Remarks

VCC turn-off hysteresis VCC HYST 1.8 — 2.2 V

Operating current ICC

Startup current I

Sleep current I

Sleep threshold V

Oscillator Section

Parameters Symbols Min. Typ. Max. Units Remarks

Switching frequency fSW 50 — 200 kHz R

Initial accuracy f Voltage stability V Temperature stability T Total variation fVT — 10 — % Line & temperature Long term stability F Maximum duty cycle D

Minimum duty cycle D

Minimum off time T

Protection Section

Parameters Symbols Min. Typ. Max. Units Remarks

Open loop protection(OLP) Vfb threshold

Output under voltage protection (OUV)

Output over voltage protection (OVP)

OVP hysteresis — 350 450 550 mV Peak current limit protection

(I

) I

PKLMT

threshold

voltage

SNS

from – 25°C to 125°C. Typical values represent the median values, which are related to 25°C. If not

J

=15V is assumed for test condition.

CC

— 18 22 mA C — 36 40 mA C

— 8 10 mA

— — 175 uA VCC=VCC ON - 0.1V

CCSTART

— 125 200 uA V

SLEEP

0.56 0.62 0.68 V

SLEEP

— — 5 % TA = 25˚C

SW ACC

— 0.2 3 % 13V <VCC <20V

STAB

— 2 — % -25˚C ≤ TJ≤ 125˚C

STAB

— 0.1 0.5 % T

STABLT

93 — 98 % fSW=200kHz

MAX

— — 0 %

MIN

200 300 400 Ns fSW= 50kHz to 200kHz

offmin

=1nF fSW=200kHZ

LOAD

=10nF fSW=200kHZ

LOAD

Standby mode - inactive gate Internal oscillator running

<0.5V, VCC =15V

OVP

= 165kΩ-37kΩ approx.

SET

= 125˚C, 1000Hrs

AMB

V

17 19 21 %VREF

OLP

V

49 51 53 %VREF Brown out protection

OUV

V

104 105.5 107 %VREF

OVP

V

-1.11 -1.04 -0.96 V

ISNS

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IR1150(S)/IR1150I(S)(PbF)

Internal Voltage Reference Section

Parameters Symbols Min.

Reference voltage V Line regulation R

Temp stability T

Total variation ∆V

Voltage Error Amplifier Section

6.9 7.0 7.1 V TA = 25˚C

REF

— 12 25 mV 13.5V <VCC < 20V

REG

— 0.4 — % -25˚C ≤T

STAB

6.8 — 7.1 V Over VCC and Tj ranges

TOT

Parameters Symbols Min.

Typ.

Max.

Units

Remarks

Units

Remarks

Transconductance gm 30 40 55 µS -25˚C ≤T

Source/sink current

Soft start delay time (calculated)

VCOMP voltage (fault) V

Effective VCOMP voltage V

I

OVEA

t

— 40 — ms

ss

COMP FLT

COMP EFF

Input bias current IIB — -0.2 -0.5 µA

Open loop bandwidth BW — 1 — MHz

Input offset voltage temp coefficient

Common mode rejection ratio

TC

— — 10 µV/˚C Note 1

IOV

CMRR — 100 — dB

Output low voltage VOL — — 0.5 V Output high voltage VOH 5.71 6.15 6.8 V

VCOMP start voltage V

COMP START

30 20

— 1.2 1.5

0.2

40 45

65 90

µA

V

T

-25˚C ≤T

6.05 V

300 500 700 mV

AMB

R

GAIN

C

POLE

@ 1mA (max) initial @ 25µA steady state

V

FB

-25˚C ≤ T

≤ 125˚C

AMB

≤ 125˚C

AMB

= 25˚C

≤ 125˚C

AMB

=1kΩ , C

ZERO

=0.33µF

=0.01µF, fXO=28Hz

=0V

≤ 125˚C

AMB

Current Amplifier Section

Parameters Symbols Min.

Typ.

Max.

Units

Remarks

DC gain gDC — 2.5 — V/V

Corner frequency fC 200 — 280 kHz Note 1

Input offset voltage VIO — 1 4 mV Note 1

ISNS bias current ΙIB — 200 300 µA VFB=0V,-25˚C ≤ T Input offset voltage temp

coefficient

Common mode rejection ratio

Blanking time T

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TC

— — 10 µV/˚C Note 1

IOV

CMRR — 100 — dB

BLANK

230 350 450 ns 150 600 ns

= 25˚C

T

AMB

-25˚C ≤T

≤ 125˚C

AMB

≤ 125˚C

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IR1150(S)/IR1150I(S)(PbF)

Gate Driver Section

Parameters Symbols Min. Typ. Max. Units Remarks

Gate low voltage V

Gate high voltage V

Rise time tr

Fall time tf

Out peak current I

Gate voltage @ fault VG

Note 1: Guaranteed by design, but not tested in production.

— 1.2 1.5 V I

GLO

— 13 18 V VCC=20V

GTH

9.5 — — V VCC =11.5V

GTH

— 20 — ns C — 70 — ns C

1.5 — — A C

OPK

— — 1.8 V I

fault

GATE

LOAD

GATE

=200mA

= 1nF, VCC=16V = 10nF, VCC=16V

= 10nF, VCC=16V

=20mA

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