International Rrectifier 22RIA User Manual

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MEDIUM POWER THYRISTORS Stud Version

Features

Improved glass passivation for high reliability

and exceptional stability at high temperature

High di/dt and dv/dt capabilities

Standard package

Low thermal resistance

Metric threads version available

Types up to 1600V V

DRM

/ V

Bulletin I2403 rev. A 07/00

22RIA SERIES

22A

RRM

Typical Applications

Medium power switching

Phase control applications

Can be supplied to meet stringent military,

aerospace and other high-reliability requirements

Major Ratings and Characteristics

Parameters Units

I

T(AV)

@ T

C

I

T(RMS)

I

TSM

I2t@

V

DRM/VRRM

t

q

T

J

@ 50Hz 400 340 A

@ 60Hz 420 355 A

50Hz 793 575 A2s

@ 60Hz 724 525 A2s

typical 110 µs

10 to 120 140 to 160

100 to 1200 1400 to 1600 V

22RIA

22 22 A

85 85 °C

35 35 A

- 65 to 125 °C

Case Style

TO-208AA (TO-48)

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1

22RIA Series

Bulletin I2403 rev. A 07/00

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage V

DRM/VRRM

Type number Code peak and off-state voltage (1) repetitive peak voltage (2) @ T

10 100 150 20

20 200 300

40 400 500

60 600 700

22RIA 8 0 800 900 10

100 1000 1100

120 1200 1300

140 1400 1500

160 1600 1700

(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/µs
(2) For voltage pulses with t

≤ 5ms

p

On-state Conduction

Parameter Units Conditions

I

Max. average on-state current 22 22 A 180 ° sinusoidal conduction

T(AV)

@ Case temperature 85 85 °C

I

Max. RMS on-state current 3 5 35 A

T(RMS)

I

Max. peak, one-cycle 400 340 A t = 10ms No voltage

TSM

non-repetitive surge current 420 355 t = 8.3ms reapplied

2

I

t Maximum I2t for fusing 793 575 A2s t = 10ms No voltage Initial TJ = TJ max.

2

I

√t Maximum I2√t for fusing 7930 5750 A2√s t = 0.1 to 10ms, no voltage reapplied, T

V

Low level value of threshold 0.83 1.01 V (16.7% x π x I

T(TO)1

voltage
High level value of threshold 0.95 1.17 (I > π x I

V

T(TO)

2

voltage
Low level value of on-state 14.9 12.24 mΩ (16.7% x π x I

r

t1

slope resistance

r

High level value of on-state 13.4 10.35 (I > π x I

t2

slope resistance

Max. on-state voltage 1.70 --- V Ipk= 70 A, TJ = 25°C

V

TM

I

Maximum holding current 130 mA TJ = 25°C. Anode supply 6V, resistive load,

H

Latching current 200

I

L

, max. repetitive V

VVmA

, maximum non- I

RSM

DRM/IRRM

= TJ max.

J

22RIA

10 to 120 140 to 160

335 285 t = 10ms 100% V

355 300 t = 8.3ms reapplied Sinusoidal half wave,

724 525 t = 8.3ms reapplied

560 405 t = 10ms 100% V

515 370 t = 8.3ms rea pplied

T(AV)

T(AV)

--- 1.80

RRM

RRM

< I < π x I

T(AV)

), TJ = TJ max.

< I < π x I

T(AV)

), TJ = TJ max.

), TJ = TJ max.

T(AV)

), TJ = TJ max.

T(AV)

= TJ max.

J

max.

2

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Bulletin I2403 rev. A 07/00

Switching

Parameter 22RIA Units Conditions

di/dt Max. rate of rise of turned-on TJ = TJ max., VDM = rated V

current V

Typical turn-on time 0.9 TJ = 25°C,

t

gt

Typical reverse recovery time 4 µs TJ = TJ max.,

t

rr

t

Typical turn-off time 110 TJ = TJ max., ITM = I

q

≤ 600V 200 A/µs Gate pulse = 20V, 15Ω, t

DRM

≤ 800V 18 0 I

V

DRM

≤ 1000V 16 0

V

DRM

V

≤ 1600V 15 0

DRM

= (2x rated di/dt) A

TM

at = rated V

I

TM

DRM/VRRM

= I

, tp > 200µs, di/dt = -10A/µs

T(AV)

di/dt = -10A/µs, dv/dt = 20V/µs linear to

67% V

, gate bias 0V-100W

DRM

(*) tq = 10µsup to 600V, tq = 30µs up to 1600V available on special request.

DRM

= 6µs, tr = 0.1µs max.

p

, TJ = 125°C

, tp > 200µs, VR = 100V,

T(AV)

Blocking

Parameter 22RIA Units Conditions

dv/dt Max. critical rate of rise of 100 TJ = TJ max. linear to 100% rated V

off-state voltage 300 (*) TJ = TJ max. linear to 67% rated V

(**) Available with: dv/dt = 1000V/µs, to complete code add S90 i.e. 22RIA160S90.

V/µs

22RIA Series

DRM

DRM

Triggering

Parameter 22RIA Units Conditions

PGMMaximum peak gate power 8.0 TJ = TJ max.

P

Maximum average gate power 2.0

G(AV)

I

Max. peak positive gate current 1.5 A TJ = TJ max.

GM

-V

Maximum peak negative 10 V TJ = TJ max.

GM

gate voltage

I

DC gate current required 90 TJ = - 65°C

GT

to trigger 60 mA T

35 T

V

DC gate voltage required 3.0 TJ = - 65°C

GT

to trigger 2.0 V T

1.0 V T

DC gate current not to trigger 2.0 mA TJ = TJ max., V

I

GD

V

DC gate voltage not to trigger 0.2 V TJ = TJ max.

GD

W

= 25°C

J

= 125°C

J

= 25°C

J

= 125°C

J

V

= rated value

DRM

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Max. required gate trigger current/
voltage are the lowest value which
will trigger all units 6V anode-to­cathode applied

= rated value

DRM

Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated

anode-to-cathode applied

V

DRM

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