International Rrectifier 12F-R User Manual

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Bulletin I20205 rev. A 09/98

12F(R) SERIES

STANDARD RECOVERY DIODES

Features

High surge current capability
Avalanche types available
Stud cathode and stud anode version
Wide current range
Types up to 1200V V

RRM

Typical Applications

Battery charges
Converters
Power supplies
Machine tool controls

Major Ratings and Characteristics

Parameters 12F(R) Units

I

F(AV)

I

F(RMS)

I

FSM

@ T

C

@ 50Hz 265 A
@ 60Hz 280 A

12 A

144 °C

19 A

Stud Version

12 A

I2t@

V

RRM

T

J

50Hz 351 A2s
@ 60Hz 320 A
range 100 to 1200 V
range - 6 5 to 175 °C

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2

s

case style

DO-203AA (DO-4)

1

12F(R) Series

Bulletin I20205 rev. A 09/98

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage V

Type number Code repetitive peak repetitive peak avalanche

10 100 150 -­20 200 275 --

40 400 500 500

12F(R) 60 600 725 75 0 12

80 800 950 950
100 1000 1200 1150
120 1200 1400 1350

(1) Avalanche version only available from V

Forward Conduction

Parameter 12F(R) Units Conditions

I

Max. average forward current 12 A 180° conduction, half sine wave

F(AV)

@ Case temperature 144 °C

I

Max. RMS forward current 1 9 A

F(RMS)

P

Maximum non-repetitive 7 K/W 10µs square pulse, TJ = TJ max.

R

peak reverse power see note (2)
Max. peak, one-cycle forward, 265 t = 10ms No voltage

I

FSM

non-repetitive surge current 280 t = 8.3ms reapplied

2

I

t Maximum I2t for fusing 351 t = 10ms No voltage Initial TJ = TJ max.

2

√t Maximum I2√t for fusing 3510 A2√s t = 0.1 to 10ms, no voltage reapplied

I

Low level value of threshold

V

F(TO)1

voltage
High level value of threshold

V

F(TO)2

voltage
Low level value of forward

r

1

f

slope resistance
High level value of forward

r

2

f

slope resistance
Max. forward voltage drop 1.26 V Ipk= 38A, TJ = 25°C, tp = 400µs rectangular wave

V

FM

(2) Available only for Avalanche version, all other parameters the same as 12F.

, maximum V

RRM

, maximum non- V

RSM

, minimum I

R(BR)

reverse voltage reverse voltage voltage

VVV(1) mA

400V to 1200V.

RRM

225 t = 10ms 100% V
235 t = 8.3ms reapplied Sinusoidal half wave,

320 t = 8.3ms reapplied
250 t = 10ms 100% V
226 t = 8.3ms reapplied

0.77 (16.7% x π x I

0.97 (I > π x I

10.70 (16.7% x π x I

6.20 (I > π x I

A

A2s

V

mΩ

F(AV)

), TJ = TJ max.

F(AV)

F(AV)

), TJ = TJ max.

F(AV)

RRM

RRM

< I < π x I

< I < π x I

), TJ = TJ max.

F(AV)

), TJ = TJ max.

F(AV)

RRM

@ TJ = 175°C

max.

2

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